At&s (china) Co. Ltd.

At&s Austria Technologie & Systemtechnik Aktiengesellschaft

Mikael Tuominen

Seok Kim Tay

Nick Xin

Artan Baftiri

Annie Tay

Kim Liu

Henry Guo

Diego Lorenzoni

A component carrier with an asymmetric build-up, which includes (a) a core; (b) a first stack at a first main surface of the core, the first stack having at least one first electrically conductive layer structure and a plurality of first electrically insulating layer structures; and (c) a second stack at a second main surface of the core, the second stack having at least one second electrically conductive layer structure and a plurality of second electrically insulating layer structures. At least two of the second electrically insulating layer structures are in direct contact with each other and each one of these electrically insulating layer structures has a smaller thickness than and/or includes a different material property than one of the first electrically insulating layer structures. Further described are methods for designing and manufacturing such an asymmetric component carrier.

Component carrier with asymmetric build-up and methods for determining a design of and manufacturing the same

A semi-flex component carrier includes a stack with at least one electrically insulating layer structure and/or at least one electrically conductive layer structure. The stack defines at least one rigid portion and at least one semi-flexible portion. A component is embedded in the at least one rigid portion. A transition region between the at least one semi-flexible portion and the at least one rigid portion of the component carrier has a slanted sidewall.

Semi-flex component carrier with dielectric material surrounding an embedded component and having locally reduced young modulus

A semi-flex component carrier includes a stack having at least one electrically insulating layer structure, at least one electrically conductive layer structure and a stress propagation inhibiting barrier. The stack defines at least one rigid portion and at least one semi-flexible portion. The stress propagation inhibiting barrier includes a plurality of stacked vias filled at least partially with electrically conductive material in an interface region between the at least one rigid portion and the at least one semi-flexible portion and configured to inhibit stress propagation between the at least one rigid portion and the at least one semi-flexible portion during bending.

Semi-flex component carrier with dielectric material having high elongation and low young modulus

A method of manufacturing a component carrier is described. The method includes forming a stack having at least one electrically conductive layer structure and/or at least one electrically insulating layer structure, and cutting out the component carrier from the stack along a closed circumferential laser cutting trajectory by a pulsed laser beam having a pulse length of less than 1 ns.

Component carrier with well-defined outline sidewall cut by short laser pulse and/or green laser

A method of manufacturing a component carrier is described. The method includes forming a stack with at least one electrically conductive layer structure and at least one electrically insulating layer structure, and reducing an amount of solvent in a fiber-free dielectric layer, which is directly connected to a metal layer, so that the dielectric layer with reduced amount of solvent remains at least partially uncured.

Component carrier with low-solvent fiber-free dielectric layer

A method of manufacturing a component carrier includes providing a laminated stack with at least one electrically conductive layer structure and/or at least one electrically insulating layer structure, at least partially covering a component with a transition layer having a thickness in a range from 0.5 nm to 1 μm, and assembling the component with the stack.

Component carrier having component covered with ultra-thin transition layer

A component carrier with a stack including an electrically insulating layer structure and an electrically insulating structure has a tapering blind hole formed in the stack and an electrically conductive plating layer extending along at least part of a horizontal surface of the stack outside of the blind hole and along at least part of a surface of the blind hole. A minimum thickness of the plating layer at a bottom of the blind hole is at least 8 &#x3bc;m. A demarcation surface of the plating layer in the blind hole and facing away from the stack extends laterally outwardly from the bottom of the blind hole towards a lateral indentation and extends laterally inwardly from the indentation up to an outer end of the blind hole. An electrically conductive structure fills at least part of a volume between the plating layer and an exterior of the blind hole.

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Pernio, Finland

Mikael Tuominen