Semiconductor Energy Laboratory Co., Ltd.

Sony Corporation

Mika Ishiwata

Shunpei Yamazaki

Toru Takayama

Mitsunori Sakama

Hiroshi Uehara

Hisashi Abe

Motohiro Toyota

In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamberwith a power source, a vacuum exhausting means, and a reaction gas introduction pipe, plasmais generated in a space surrounded by an electrode, a substrate holder, and an insulator

Plasma CVD apparatus

In a method of manufacturing a cold cathode field emission device, a cathode electrode, an insulating layerand a gate electrodeare formed; an opening portionis formed through the gate electrodeand the insulating layerto expose the cathode electrode; a resist-material layercovering the side wall of the opening portion, the gate electrodeand the insulating layeris formed; the surface of the resist-material layer is modified to form a modified layer; an electron emitting portionconstituted of the thick-film-paste-material layeris formed on the cathode electrodepositioned in the bottom portion of the opening portion; and then, the resist-material layeris removed.

Method of patterning a thick-film paste material layer, method of manufacturing cold- cathode field emission device, and method of manufacturing a cold-cathode field emission display

In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber with a power source a vacuum exhausting means and a reaction gas introduction pipe plasma is generated in a space surrounded by an electrode a substrate holder and an insulator

In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber,with a power source,, a vacuum exhausting means,, and a reaction gas introduction pipe,, plasma,is generated in a space surrounded by an electrode,, a substrate holder,, and an insulator

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Kanagawa, Japan

Mika Ishiwata