Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Safran

Mikaël Colin

Audrey Berthelot

Alain Jeanroy

Guillaume Lehee

Philippe Onfroy

Olivier Vancauwenberghe

Jean-Sébastien Mace

Process for producing semiconductor devices in a substrate, comprising: photolithography of a pattern of a reticle onto a portion of the substrate, defining first elements of the semiconductor devices, an exposure of the pattern being repeated a plurality of times in order to define all of the devices, photolithography of a pattern of an etch mask over all of the substrate, etching photolithography patterns into one portion of the thickness of the substrate, wherein first dicing lanes encircling the devices are included in the pattern of the etch mask and/or of the reticle, and the photolithography of the etch mask defines second dicing lanes defined by predetermined fracture lines of the edges of the substrate, and furthermore comprising the implementation of a step of irradiating the substrate with a laser beam through the first and second dicing lanes.

Method of producing semiconductor devices in a substrate including etching of the pattern of an etch mask and/or a reticle to create the first dicing lanes encircling the devices and second dicing lanes defined by fracture lines of the edges of the substrate

A microdevice () comprising a movable element () capable of moving relative to a fixed part (), produced in first and second layers of material () arranged one above the other such that the movable element comprises a portion () of the first layer and a portion () of the second layer secured to each other, and wherein the movable element is suspended from the fixed part by a suspension structure () formed in the first and/or second layer of material.

Microdevice comprising at least two movable elements

Growing community of inventors

Grenoble, France

Mikaël Colin