Samsung Electronics Co., Ltd.

Mijin Lee

Chanhee Jeon

Sukjin Kim

Insu Choi

Wonjae Shin

Sung-Joon Kim

Heedong Kim

Namho Kim

Kideok Han

Seung Ju Lee

Ilwoong Seo

Minsu Bae

Hyan Suk Lee

A memory system includes a memory module that includes a first memory device through a fourth memory device and a first error correction code (ECC) device, and a memory controller that exchanges first user data with each of the first memory device through the fourth memory device through 8 data lines and exchanges first ECC data with the first ECC device through 4 data lines. The memory controller includes an ECC engine that corrects a 32-random bit error of the first user data, based on the first ECC data.

Memory module, memory system, and operation method of memory controller

An electrostatic discharge (ESD) device having a small size, a low turn-on voltage, and a low on resistance and an ESD protection circuit including the ESD device are provided. The ESD device includes a well formed in a substrate to have a first conductive type, an active region being defined at an upper portion of the substrate, a plurality of fins extending in a first direction to have a structure protruding from the substrate, a first conductive impurity region formed with first conductive impurities, a second conductive impurity region formed with second conductive impurities, and a fin-cut isolation region disposed between the first conductive impurity region and the second conductive impurity region in the first direction to cut each fin, wherein a bottom surface of the fin-cut isolation region is higher than a bottom surface of the active region.

FinFET ESD device with fin-cut isolation region

A semiconductor device includes first well regions in a substrate and spaced apart from each other, a connection doped region between the first well regions, and a first interconnection line electrically connected to the connection doped region through a first contact. The first well regions and the connection doped region include impurities of a first conductivity type, and a concentration of the impurities in the connection doped region is higher than that in the first well regions. The first well regions extend into the substrate to a depth larger than that of the connection doped region. A first portion of the connection doped region is disposed in the first well regions and a second portion of the connection doped region contacts the substrate.

Semiconductor device

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Yongin-si, South Korea

Mijin Lee