Lg Display Co., Ltd.

Mijin Jeong

Kyungmo Son

Sangsoon Noh

Sungjin Lee

YoungJang Lee

Sohyung Lee

JaeHoon Park

JaeHyun Kim

Seunghyo Ko

Moonho Park

Seongpil Cho

DeukHo Yeon

Dongchae Shin

MoonHo Park

SunYoung Choi

Jaehoon Park

A thin film transistor, in one or more examples, includes a semiconductor layer, an upper gate electrode overlapped with the semiconductor layer, an upper insulating layer disposed between the semiconductor layer and the upper gate electrode, a first lower gate electrode overlapped with the semiconductor layer, a second lower gate electrode disposed between the semiconductor layer and the first lower gate electrode, overlapped with the semiconductor layer, and configured to have a width smaller than that of the upper gate electrode, a first lower insulating layer disposed between the first lower gate electrode and the second lower gate electrode, and a second lower insulating layer disposed between the second lower gate electrode and the semiconductor layer. A display apparatus including a thin film transistor is also disclosed.

Thin film transistor and display apparatus including the same

A display panel and a display device includes a high-permittivity material disposed between electrodes of capacitor disposed in a subpixel. This increases the capacitance per area of the capacitor, such that a high-resolution display device is provided. A high-permittivity material is disposed in the insulating layer, and the surface of the insulating layer is planarized by polishing. The high-permittivity material is prevented from residing in any area, except for the area in which the capacitor is disposed. An unnecessary increase in load in the subpixel is prevented, and the capacitance of the capacitor is increased.

Display panel and display device comprising capacitor with increased capacitance

A display device comprises a display panel in which a plurality of subpixels are disposed, wherein the plurality of subpixels include a first subpixel, a second subpixel, a third subpixel, and a fourth subpixel that are sequentially disposed in a single row or column; a gate driver disposed on the display panel and supplying a scanning signal to the plurality of subpixels; a first island pattern disposed in each area of the first subpixel and the third subpixel; a second island pattern disposed in each area of the second subpixel and the fourth subpixel; a first connection line electrically connecting the first island pattern disposed in the area of the first subpixel and the first island pattern disposed in the area of the third subpixel; and a second connection line electrically connecting second island pattern disposed in the area of the second subpixel and the second island pattern disposed in the area of the fourth subpixel, wherein the first connection line and the second connection line are electrically disconnected from each other, and the gate driver independently drives the first connection line and the second connection line.

Display panel and display device

Provided are a thin film transistor substrate and a display using the same. A display includes: a first area, a second area, a first thin film transistor disposed at the first area, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at the second area, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer on an area of the display device, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed over the first gate electrode and the second gate electrode.

Thin film transistor substrate and display using the same

Provided are a thin film transistor substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed at a first area of the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at a second area of the substrate, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer disposed on an area of the substrate, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed: over the first gate electrode and the second gate electrode, and under the oxide semiconductor layer.

Growing community of inventors

Seoul, South Korea

Mijin Jeong