Asm IP Holding B.v.

Miia Mäntymäki

Mikko Ritala

Markku Leskelä

Jani Hämäläinen

A vapor deposition process for forming a thin film on a substrate in a reaction chamber where the process includes contacting the substrate with a fluoride precursor. The process results in the formation of a lithium fluoride thin film.

Vapor deposition of LiF thin films

Methods are provided for depositing thin films by vapor deposition using two different metal halide reactants. In some embodiments aluminum fluoride thin films are deposited by atomic layer deposition methods in which a substrate is alternately and sequentially contacted with a first metal halide reactant comprising aluminum, such as AlCl, and a second metal halide reactant comprising fluorine, such as TiF.

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Helsinki, Finland

Miia Mäntymäki