Samsung Electronics Co., Ltd.

Mihyun Kim

Jiwoo Lee

Youngjo Tak

Sammook Kang

Yonglak Cho

Junyoun Kim

Jeongki Park

Jangwon Hur

Jeongyong Lee

Choonggeun Lee

Dongjin Chung

The disclosure includes a housing including a first plate, a second plate, and a side member surrounding a space between the first and second plates, a printed circuit board disposed in the space and including an opening, a first conductive structure disposed in the space, a second conductive structure disposed in the space, and a flexible conductive member located between the first and second conductive structures through the opening to construct an electrical path between the first and second conductive structures. The flexible conductive member may include a base, a first flexible portion having a first height from the base, protruding from the base toward the first plate, and in contact with the first conductive structure, and a second flexible portion having a second height from the base, protruding from the base toward the second plate, and in contact with the second conductive structure.

Dual contact member and electronic device therewith

A method of fabricating a nitride semiconductor substrate including forming a buffer layer on a surface of a growth substrate, growing a first nitride semiconductor layer on the buffer layer, growing a second nitride semiconductor layer on the first nitride semiconductor layer, and removing the growth substrate may be provided. The forming a buffer layer may deform the surface of the growth substrate to have a convex shape. The forming a buffer layer and the growing a first nitride semiconductor layer may be performed within a first process chamber. The growing a second nitride semiconductor layer and the removing the growth substrate may be performed within a second process chamber.

Method of forming nitride semiconductor substrate and method of fabricating semiconductor device

Growing community of inventors

Gyeonggi-do, South Korea

Mihyun Kim