Lg Electronics Inc.

Shangrao Jinko Solar Technology Development Co., Ltd

Shangrao Xinyuan Yuedong Technology Development Co. Ltd.

Jingao Solar Co., Ltd.

Mihee Heo

Eunjoo Lee

Indo Chung

Juhong Yang

Junghoon Kim

Hyunwoo Cho

Jeongbeom Nam

Ilhyoung Jung

Youngsung Yang

Jaewoo Choi

Byoungkwon Cho

Chungyi Kim

Byungjun Kang

A method of manufacturing a display device according to the present invention involves assembling a semiconductor light emitting element to an assembly substrate and then transferring the same to a wiring substrate, wherein, during self-assembly using magnetic and electric fields, the semiconductor light emitting element is fixed to the assembly substrate by forming a covalent bond between the semiconductor light emitting element and the assembly substrate so that the semiconductor light emitting element does not become separated from the assembly substrate, and when transferring the assembled object to the wiring substrate, the formed covalent bond is broken down so that the semiconductor light emitting element can be easily detached from the assembly substrate.

Method of manufacturing display device using semiconductor light emitting element

Discussed is a display device including a base part; a plurality of assembly electrodes disposed on the base part and having a first electrode and a second electrode that generate an electric field when power is applied; a dielectric layer disposed to cover the plurality of assembly electrodes; and a plurality of semiconductor light emitting devices disposed on a surface of the dielectric layer, wherein one surface of the plurality of semiconductor light emitting devices facing the dielectric layer and one surface of the dielectric layer facing the plurality of semiconductor light emitting devices respectively comprise a concave-convex structure.

Display device using micro led

A display device includes a plurality of semiconductor light emitting diodes, first and second electrodes respectively extending from the plurality of semiconductor light emitting diodes to supply an electrical signal to the plurality of semiconductor light emitting diodes, a plurality of pair electrodes disposed on a substrate and having a first electrode and a second electrode, a dielectric layer disposed on the plurality of pair electrodes, and a chemical bond layer disposed between the dielectric layer and the plurality of semiconductor light emitting diodes and forming a covalent bond with the dielectric layer and each of the plurality of semiconductor light emitting diodes. The chemical bond layer bonds the semiconductor light emitting diodes to the dielectric layer when a voltage applied to the plurality of pair electrodes is cut off after the plurality of semiconductor light emitting diodes are assembled on the dielectric layer.

Display device and method for self-assembling semiconductor light emitting diodes

Disclosed is a solar cell. The solar cell includes a semiconductor substrate, conductivity-type regions located in or on the semiconductor substrate, electrodes conductively connected to the conductivity-type regions, and insulating films located on at least one of opposite surfaces of the semiconductor substrate, and including a first film and a second film located on the first film, the second film has a higher carbon content than that of the first film, a refractive index of the second film is equal to or less than a refractive index of the first film, and an extinction coefficient of the second film is equal to or greater than an extinction coefficient of the first film.

Solar cell

A display device can include a plurality of semiconductor light emitting diodes; first and second wiring electrodes respectively extending from the plurality of semiconductor light emitting diodes to supply an electrical signal to the plurality of semiconductor light emitting diodes; a plurality of pair electrodes disposed on a substrate and having a first electrode and a second electrode that generate an electric field when a current is supplied thereto; a dielectric layer disposed to cover the plurality of pair electrodes; and a covalent bond layer disposed between the dielectric layer and the plurality of semiconductor light emitting diodes, and forming a covalent bond with the dielectric layer and each of the plurality of semiconductor light emitting diodes, wherein the first wiring electrode and the second wiring electrode are located at opposite sides of the plurality of pair electrodes based on the plurality of semiconductor light emitting diodes.

A solar cell includes a substrate of a first conductive type, a first doped region positioned at a first surface of the substrate and contains impurities of a second conductive type different from the first conductive type, and a first electrode part electrically connected to the first doped region. The first electrode part includes a thermosetting resin, and first and second conductive particles distributed in the thermosetting resin. The second conductive particles have a work function greater than the first conductive particles and form silicide at an interface contacting the first doped region.

Solar cell and method for manufacturing the same

Disclosed is a solar cell including a semiconductor substrate, a conductive area including a first conductive area and a second conductive area formed on one surface of the semiconductor substrate, a passivation film formed on the conductive area, the passivation film having a contact hole, a protective film formed on the conductive area inside the contact hole, the protective film being formed on at least one of at least a portion of an inner side surface of the contact hole and the passivation film, and an electrode electrically connected to the conductive area through the contact hole with the protective film interposed therebetween.

Solar cell and method of manufacturing the same

Disclosed is a solar cell including a semiconductor substrate, a protective-film layer on a surface of the semiconductor substrate, a polycrystalline semiconductor layer over the protective-film layer, a first conductive area formed by selectively doping the semiconductor layer with a first conductive dopant, a second conductive area doped with a second conductive dopant and located between neighboring portions of the first conductive area, an undoped barrier area located between the first conductive area and the second conductive area, a first electrode connected to the first conductive area, and a second electrode connected to the second conductive area. Each of the first conductive area and the second conductive area includes a second crystalline area having a crystalline structure different from that of the barrier area, and the second crystalline areas of the first and second conductive areas include a second polycrystalline area and a fourth crystalline area having different depths.

A solar cell can include a semiconductor substrate; a tunneling layer formed over the semiconductor substrate; a conductive area located over the tunneling layer, the conductive area including a first conductive area of a first conductive type and a second conductive area of a second conductive type; and an electrode including a first electrode connected to the first conductive area and a second electrode connected to the second conductive area, wherein a mark is located in at least one of the first conductive area and the second conductive area, and has a different shape from that of a crystal plane of the semiconductor substrate and the conductive area, and wherein the mark is formed along a longitudinally extending edge of at least one of the first conductive area and the second conductive area.

Disclosed is a solar cell including a control passivation film on one surface of a semiconductor substrate, and being formed of a dielectric material; and a semiconductor layer on the control passivation film, wherein the semiconductor layer including a first conductive region having a first conductive type and a second conductive region having a second conductive type opposite to the first conductive type. The semiconductor substrate includes a diffusion region including at least one of a first diffusion region and a second diffusion region adjacent to the control passivation film, wherein the first diffusion region being locally formed to correspond to the first conductive region and having a doping concentration lower than a doping concentration of the first conductive region, wherein the second diffusion region being locally formed to correspond to the second conductive region and having a doping concentration lower than a doping concentration of the second conductive region.

Disclosed is a method of manufacturing a solar cell, the method including forming a tunneling layer over one surface of a semiconductor substrate, forming a semiconductor layer over the tunneling layer, forming a conductive area including a first conductive area of a first conductive type and a second conductive area of a second conductive type in the semiconductor layer, and forming an electrode including a first electrode connected to the first conductive area and a second electrode connected to the second conductive area. The forming of the conductive area includes forming a mask layer over the semiconductor layer, forming a doping opening corresponding to at least one of the first conductive area and the second conductive area in the mask layer using a laser, and performing doping using the doping opening.

Growing community of inventors

Seoul, South Korea

Mihee Heo