Tokyo Electron Limited

Applejack 199 L.p.

Therma-wave, Inc.

Tokyo Electron Limi Ted

Mihail Mihaylov

Ching-Ling Meng

Xinkang Tian

Holger Tuitje

Junwei Bao

Hanyou Chu

Manuel B Madriaga

Wojciech Jan Walecki

Jae Ryu

Yan Chen

Zheng Yan

Ping Wang

Shifang Li

Vi Vuong

Ivan Maleev

Jun Pei

Wen Jin

Jason Ferns

Joel Ng

Dale Lindseth

Weiwen Xu

Haixing Zou

Qionglin Gao

Badru D Hyatt

The present subject matter includes a method of focusing of an optical imaging apparatus. The method comprises causing illumination of an object using an illuminating beam to thereby cause generation of a scattered beam. A first set of luminous parameters are derived from a first detected position of a luminous representation formed by the scattered beam from the object. The illumination-beam is focused upon the object by triggering a movement of the object along an optical-axis in a first direction, the first direction being based a numerical-representation of the first set of luminous parameters. A second set of luminous parameters are derived from a second detected position of the luminous-representation of the object, the second detected position being related to the first detected position and the movement of the object. The focusing of the illumination beam is ceased based at-least on a numerical-representation of the second set of luminous parameters.

Focusing of optical devices

An apparatus and a method for in-situ phase determination are provided. The apparatus includes a measurement chamber configured to retain a substance, and an entrance window mounted on a side of the measurement chamber. An exit window is mounted on an opposite side of the measurement chamber, and the exit window is parallel with the entrance window. The apparatus further includes a light source configured to generate an incident light beam. The incident light beam is directed to the entrance window at a non-zero angle of incidence with respect to a normal of the entrance window. The incident light beam passes through the entrance window, the measurement chamber and the exit window to form an output light beam. A detector is positioned under the exit window and configured to collect the output light beam passing through the exit window and generate measurement data.

Optical sensor for phase determination

An advanced optical sensor and method for detection of optical events in a plasma processing system. The method includes detecting at least one light emission signal in a plasma processing chamber. The at least one detected light emission signal including light emissions from an optical event. The method further includes processing the at least one light emission signal and detecting a signature of the optical event from the processed light emission signal.

Advanced optical sensor and method for detecting an optical event in a light emission signal in a plasma chamber

Disclosed is a method, system, and apparatus for optical emission measurement. The apparatus includes a collection system for collecting a plasma optical emission spectra through an optical window disposed at a wall of a plasma processing chamber. The optical system includes a mirror configured to scan a plurality of non-coincident rays across the plasma processing chamber; and a telecentric coupler for collecting an optical signal from a plasma and directing the optical signal to a spectrometer for measuring the plasma optical emission spectra.

Spatially resolved optical emission spectroscopy (OES) in plasma processing

Disclosed is a method, computer method, system, and apparatus for measuring two-dimensional distributions of optical emissions from a plasma in a semiconductor plasma processing chamber. The acquired two-dimensional distributions of plasma optical emissions can be used to infer the two-dimensional distributions of concentrations of certain chemical species of interest that are present in the plasma, and thus provide a useful tool for process development and also for new and improved processing tool development. The disclosed technique is computationally simple and inexpensive, and involves the use of an expansion of the assumed optical intensity distribution into a sum of basis functions that allow for circumferential variation of optical intensity. An example of suitable basis functions are Zernike polynomials.

Disclosed is a method and apparatus for measuring semiconductor substrate temperature using a differential acoustic time of flight measurement technique. The measurement is based on measuring the time of flight of acoustic (ultrasonic) waves across the substrate, and calculating a substrate temperature from the measured time of flight and the known temperature dependence of the speed of sound for the substrate material. The differential acoustic time of flight method eliminates most sources of interference and error, for example due to varying coupling between an ultrasonic transducer and the substrate. To further increase the accuracy of the differential acoustic time of flight measurement, a correlation waveform processing algorithm is utilized to obtain a differential acoustic time of flight measurement from two measured ultrasonic waveforms. To facilitate signal recognition and processing, a symmetric Lamb mode may be used as mode of excitation of the substrate.

Differential acoustic time of flight measurement of temperature of semiconductor substrates

Disclosed is an in-situ optical monitor (ISOM) system and associated method for controlling plasma etching processes during the forming of stepped structures in semiconductor manufacturing. The in-situ optical monitor (ISOM) can be optionally configured for coupling to a surface-wave plasma source (SWP), for example a radial line slotted antenna (RLSA) plasma source. A method is described to correlate the lateral recess of the steps and the etched thickness of a photoresist layer for use with the in-situ optical monitor (ISOM) during control of plasma etching processes in the forming of stepped structures.

System for in-situ film stack measurement during etching and etch control method

A method and system are provided for lamp temperature control for optical metrology. Precise control of the lamp temperature provides the improved signal-to-noise ratios required for accurately determining the profile of nanometer sized structures using optical metrology.

Method and system for lamp temperature control in optical metrology

Provided is a method of designing an optical metrology system for measuring structures on a workpiece wherein the optical metrology system is configured to meet a plurality of design goals. The design of the optical metrology system is optimized by using collected design goal data in comparison to the set plurality of design goals. In one embodiment, the optical metrology system is used for stand alone metrology systems. In another embodiment, the optical metrology system is integrated with a fabrication cluster in semiconductor manufacturing. At least one parameter determined from a diffraction signal measured using the optical metrology system is transmitted to the fabrication cluster. The at least one parameter is used to modify at least one process variable or equipment setting of the fabrication cluster.

Automated process control using an optical metrology system optimized with design goals

Provided is a method of designing an optical metrology system for measuring structures on a workpiece where the optical metrology system is configured to meet two or more design goals. The design of the optical metrology system is optimized by using collected design goal data in comparison to the set two or more design goals. In one embodiment, the optical metrology system is used for stand alone metrology systems. In another embodiment, the optical metrology system is integrated with a fabrication cluster in semiconductor manufacturing.

Optical metrology system optimized with design goals

Provided is a method and system for auto focusing a workpiece in the Z-axis using a position sensitive focus detector. A focus detection beam is measured using a focus detector, the focus detector having an array of sensors, each sensor of the array of sensors having a sensor identification, the focus detector measuring the focus detection beam projected on a plurality of sensors in the array of sensors, generating a corresponding focus signal for each sensor in the array of sensors. The plurality of focus signals and associated sensor data is used to generate a best focus instruction which is used to move the workpiece to the best focus position on the Z-axis.

Auto focusing of a workpiece using an array detector each with a detector identification

Provided is a method of designing an optical metrology system for measuring structures on a workpiece where the optical metrology system is configured to meet a plurality of design goals. Primary components of the optical metrology system affecting the design goals are determined and used in the initial design. The design of the optical metrology system is optimized by using collected design goal data in comparison to the set plurality of design goals. In one embodiment, the optical metrology system is used for stand alone metrology systems. In another embodiment, the optical metrology system is integrated with a fabrication cluster in semiconductor manufacturing.

Optical metrology system optimized with a plurality of design goals

A detector network for an optical metrology system includes an analog to digital converter for each photodetector or detector array. Each analog to digital converter is connected to provide digitally encoded output from its associated detector. Each analog to digital converter is also connected to a hub. The hub receives commands from a processor and distributes them to the analog to digital converters. The converters sample the output of their associated detectors and return the digitized results to the hub. In turn, the hub passes the digitized results to the processor for analysis.

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San Jose, CA, United States of America

Mihail Mihaylov