Infineon Technologies Ag

Mihai Draghici

Wolfgang Lehnert

Tobias Franz Wolfgang Hoechbauer

Hans-Joachim Schulze

Ralf Siemieniec

Roland Rupp

Werner Schustereder

Jens Peter Konrath

Alexander Breymesser

Bernhard Goller

Marko Swoboda

Guenter Denifl

Matteo Piccin

Methods for processing a semiconductor substrate are proposed. An example of a method includes forming cavities in the semiconductor substrate by implanting ions through a first surface of the semiconductor substrate. The cavities define a separation layer in the semiconductor substrate. A semiconductor layer is formed on the first surface of the semiconductor substrate. Semiconductor device elements are formed in the semiconductor layer. The semiconductor substrate is separated along the separation layer into a first substrate part including the semiconductor layer and a second substrate part.

Methods for processing a semiconductor substrate

A wafer composite includes a handle substrate, an auxiliary layer formed on a first main surface of the handle substrate, and a silicon carbide structure formed over the auxiliary layer. The handle substrate is subjected to laser radiation that modifies crystalline material along a focal plane in the handle substrate. The focal plane is parallel to the first main surface. The auxiliary layer is configured to stop propagation of microcracks that the laser radiation may generate in the handle substrate.

Method of manufacturing a silicon carbide device and wafer composite including laser modified zones in a handle substrate

A method for forming a semiconductor device includes: forming, in a silicon carbide layer of a first conductivity type having a first side, a first silicon carbide region and a second silicon carbide region that forms a pn-junction with the first silicon carbide region; forming a contact region that forms an Ohmic contact with the second silicon carbide region; forming a barrier-layer on the contact region and the first silicon carbide region so that a Schottky-junction is formed between the barrier-layer and the first silicon carbide region and so that an Ohmic connection is formed between the barrier-layer and the contact region, the barrier-layer comprising molybdenum nitride; and forming a first metallization on the barrier-layer, and in Ohmic connection with the barrier-layer.

Method of manufacturing a semiconductor device

A method for processing a silicon carbide wafer includes implanting ions into the silicon carbide wafer to form an absorption layer in the silicon carbide wafer. The absorption coefficient of the absorption layer is at least 100 times the absorption coefficient of silicon carbide material of the silicon carbide wafer outside the absorption layer, for light of a target wavelength. The silicon carbide wafer is split along the absorption layer at least by irradiating the silicon carbide wafer with light of the target wavelength to obtain a silicon carbide device wafer and a remaining silicon carbide wafer.

Methods for processing a silicon carbide wafer, and a silicon carbide semiconductor device

A semiconductor device includes a semiconductor body having a first silicon carbide region and a second silicon carbide region which forms a pn-junction with the first silicon carbide region, a first metallization on a front side of the semiconductor body, a contact region that forms an Ohmic contact with the second silicon carbide region, and a barrier-layer between the first metallization and the contact region and that is in Ohmic connection with the first metallization and the contact region. The barrier-layer forms a Schottky-junction with the first silicon carbide region, and includes molybdenum nitride or tantalum nitride. Additional semiconductor device embodiments and corresponding methods of manufacture are described.

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Villach, Austria

Mihai Draghici