Honeywell International Inc.

Honeywell Romania S.r.l.

Mihai Brezeanu

Viorel Georgel Dumitru

Octavian Buiu

Bogdan-Catalin Serban

Cornel P Cobianu

Alisa Stratulat

Ion Georgescu

Stefan Dan Costea

Bogdan Catalin Serban

Cazimir Gabriel Bostan

Viorel Avramescu

Octavian Ionescu

Matei Serbanescu

Richard Alan Davis

Eric Farin

Cristian Diaconu

Andrea Piesker

Christiane Saunier

A battery balancing system includes an energy balancing circuit. Multiple battery cells are coupled to the energy balancing circuit. A health assessment circuit is coupled to the multiple battery cells and configured to sense a state of health and a charge of each of the multiple battery cells. The balancing circuit switches energy between the multiple battery cells as a function of the sensed state of health and state of charge of each of the multiple battery cells to balance charge there between.

Adaptive balancing for battery management

A gas sensor includes a field effect transistor supported on an oxide layer of a substrate, the field effect transistor having a doped source (pdoped for T-FET and n+ doped for FET) and an n+ doped drain separated by an channel region (intrinsic for T-FET or slightly p-doped for FET), and a floating gate separated from the channel region by a gate oxide, a passivation layer covering the floating gate, and a sensing layer supported by the passivation layer, the sensing layer comprising nanofibers.

FET and fiber based sensor

A relative humidity sensor is disclosed. The relative humidity sensor includes a first electrode and a second electrode disposed above a dielectric substrate. A humidity sensitive layer is disposed above at least one of the first electrode and the second electrode, where the humidity sensitive layer comprises a curable composition comprising cellulose acetate butyrate and a hydrophobic filler. In some embodiments, a dust protection layer is disposed above the humidity sensitive layer.

Relative humidity sensor and method

An illustrative humidity sensor may include a substrate having a source and a drain, wherein the drain is laterally spaced from the source. A gate stack is provided in the space between the source and the drain to form a transistor. The gate stack may include a gate insulator situated on the substrate to form a gate insulator/substrate interface. The gate stack may further include a barrier layer above the gate insulator. The barrier layer may be configured to act as a barrier to mobile charge, humidity and/or other contaminates, and may help prevent such contaminates from reaching the gate insulator/substrate interface. The gate stack may further include a humidity sensing layer above the barrier layer. The humidity sensing layer, when exposed to humidity, may modulate the conduction channel in the substrate under the gate insulator and between the source and the drain. In some cases, the humidity level may be determined by monitoring the current flowing between the source and drain.

FET based humidity sensor with barrier layer protecting gate dielectric

A metal oxide heterostructure includes mixing a first precursor and a second precursor to form a precursor aqueous mixture, adding at least one constituent to the precursor aqueous mixture to form a first solution, adding a nanostructuring reagent to the first solution to form a second solution, sonochemically treating the second solution to provide a metal oxide powder, filtering, washing, and drying the metal oxide powder to provide a metal oxide nanocomposite heterostructure for a sensing layer of a hydrogen sulfide sensor. A method for forming a hydrogen sulfide sensor includes the metal oxide heterostructure, forming a sensing material, contacting the sensing material with interdigitated electrodes to form a sensing layer, and thermally consolidating the sensing layer to form the hydrogen sulfide sensor.

Metal oxide nanocomposite heterostructure methods and hydrogen sulfide sensors including the same

A relative humidity sensor is disclosed. The relative humidity sensor includes a first electrode and a second electrode disposed above a dielectric substrate. A sensitive layer is disposed above at least one of the first electrode and the second electrode, where the sensitive layer is formed from a composition including a polyimide and a hydrophobic filler. A dust protection layer is disposed above the sensitive layer.

An illustrative humidity sensor may include a substrate and a sensing field effect transistor. The sensing field effect transistor may comprise a source formed on the substrate, a drain formed on the substrate, a gate, and a piezoelectric layer disposed over the gate. Another illustrative humidity sensor may comprise a substrate, a semi-conductor layer disposed over the substrate, a piezoelectric layer disposed over the semi-conductor layer, a first electrode disposed on the piezoelectric layer, and a second electrode disposed on the piezoelectric layer. In some instances, the piezoelectric layer may comprise aluminum nitride.

Humidity sensors with transistor structures and piezoelectric layer

In an embodiment, a benzene sensor comprises a substrate having an iodine complex disposed thereon, a radiation source configured to project UV radiation onto the complex, and a UV detector configured to detect a UV reflection off of the substrate having the iodine complex. The iodine complex can include a cyclodextrine-iodine complex such as an alpha-cyclodextrine-iodine complex, a &#x3b2;-cyclodextrine iodine complex, or any combination thereof.

Benzene sensors and associated methods

Various embodiments disclosed relate to anti-static compositions and gloves made from the same. In various embodiments, the present invention provides a doped polyaniline comprising a dopant that is a polyacrylic acid; a polymethacrylic acid; a sulfonatocalixarene; a cyclodextrin sulfate; a compound having the structure: wherein Ris chosen from substituted or unsubstituted (C-C)hydrocarbyl- and substituted or unsubstituted (C-C)hydrocarbyl-O&#x2014;, Lis substituted or unsubstituted (C-C)hydrocarbylene, Lis chosen from a bond, &#x2014;O&#x2014;, &#x2014;O&#x2014;C(O)&#x2014;, and &#x2014;NH&#x2014;C(O)&#x2014;, and n is about 1 to about 100,000; a salt thereof; or a combination thereof.

Anti-static compositions

A hydrogen sulfide sensor is disclosed. The hydrogen sulfide sensor includes a substrate, a pair of interdigitated electrodes supported by the substrate, and a nanocomposite based sensing layer deposited on the interdigitated electrodes and configured to interact with hydrogen sulfide.

Hydrogen sulfide sensor and method

Condensation sensor systems and methods are described herein. Methods for forming a condensation sensor can include depositing a III-nitride on a substrate via sputtering, and implementing conductive contacts on the deposited III-nitride via a shadow mask.

Condensation sensor systems and methods

A diamond based oxygen sensor is able to function in harsh environment conditions. The oxygen sensor includes a gateless field effect transistor including a synthetic, quasi-intrinsic, hydrogen-passivated, monocrystalline diamond layer exhibiting a 2-dimension hole gas effect. The oxygen sensor also includes a sensing layer comprising yttrium-stabilized zirconia deposited onto a surface of the gateless field effect transistor.

Growing community of inventors

Bucharest, Romania

Mihai Brezeanu