Nanosys, Inc.

Novellus Systems Incorporated

Sandisk Corporation

Mihai A Buretea

Erik C Scher

Jeffery A Whiteford

William P Freeman

J Wallace Parce

Andreas Meisel

Joel Gamoras

Stephen A Empedocles

Baixin Qian

Chunming Niu

Jian Chen

Calvin Y H Chow

Linh Nguyen

Jeffrey A Whiteford

Linda T Romano

David P Stumbo

George D Papasouliotis

Yaoling Pan

Calvin Y Chow

Kyu S Min

Collin Mui

Jian Feng Chen

Michael S Barnes

Dennis Michael Hausmann

Seon-Mee Cho

Ron Rulkens

Steve Empedocles

Balxin Qian

Wallace J Parce

Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.

Process for group III-V semiconductor nanostructure synthesis and compositions made using same

Process for group III-IV semiconductor nanostructure synthesis and compositions made using same

Ligand compositions for use in preparing discrete coated nanostructures are provided, as well as the coated nanostructures themselves and devices incorporating same. Methods for post-deposition shell formation on a nanostructure, for reversibly modifying nanostructures, and for manipulating the electronic properties of nanostructures are also provided. The ligands and coated nanostructures of the present invention are particularly useful for close packed nanostructure compositions, which can have improved quantum confinement and/or reduced cross-talk between nanostructures. Ligands of the present invention are also useful for manipulating the electronic properties of nanostructure compositions (e.g., by modulating energy levels, creating internal bias fields, reducing charge transfer or leakage, etc.).

Compositions and methods for modulation of nanostructure energy levels

The present invention provides polymeric compositions that can be used to modify charge transport across a nanocrystal surface or within a nanocrystal-containing matrix, as well as methods for making and using the novel compositions.

Organic species that facilitate charge transfer to or from nanostructures

Methods for producing Group 10 metal nanostructures are provided. The methods involve novel precursors, novel surfactants, or novel precursor-surfactant combinations. Compositions related to the methods are also featured.

Process for group 10 metal nanostructure synthesis and compositions made using same

This invention provides composite materials comprising nanostructures (e.g., nanowires, branched nanowires, nanotetrapods, nanocrystals, and nanoparticles). Methods and compositions for making such nanocomposites are also provided, as are articles comprising such composites. Waveguides and light concentrators comprising nanostructures (not necessarily as part of a nanocomposite) are additional features of the invention.

Nanocomposites

The present invention provides compositions (small molecules, oligomers and polymers) that can be used to modify charge transport across a nanocrystal surface or within a nanocrystal-containing matrix, as well as methods for making and using the novel compositions.

Methods for forming thin dielectric films by selectively depositing a conformal film of dielectric material on a high aspect ratio structure have uses in semiconductor processing and other applications. A method for forming a dielectric film involves providing in a deposition reaction chamber a substrate having a gap on the surface. The gap has a top opening and a surface area comprising a bottom and sidewalls running from the top to the bottom. A conformal silicon oxide-based dielectric film is selectively deposited in the gap by first preferentially applying a film formation catalyst or a catalyst precursor on a portion representing less than all of the gap surface area. The substrate surface is then exposed to a silicon-containing precursor gas such that a silicon oxide-based dielectric film layer is preferentially formed on the portion of the gap surface area. The preferential application of the catalyst or catalyst precursor may occur either at the top of the gap, for example to form a sacrificial mask, or at the bottom of the gap to create a seamless and void-free gap fill.

Method of selective coverage of high aspect ratio structures with a conformal film

The present invention relates to a method of processing nanocrystals. The method comprises providing a mixture comprising nanocrystals, contaminants and a first solvent in which the nanocrystals are soluble, and using chromatography to reduce the amount of contaminants in the mixture. The method optionally comprises isolating the nanocrystals after chromatography. The method allows for the production of nanocrystal compositions having a total amount of surfactant associated therewith, the amount of surfactant comprising an amount of bound surfactant and an amount of free surfactant in the solvent, the amount of free surfactant being less than about 1% of the total amount of surfactant in the solvent. The present invention, accordingly, also relates to such compositions and corresponding composites of nanocrystals in organic polymer matrices.

Purification of nanocrystal solutions by chromatography

The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally includes separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into a electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength.

System and process for producing nanowire composites and electronic substrates therefrom

Growing community of inventors

San Francisco, CA, United States of America

Mihai A Buretea