Applied Materials, Inc.

International Business Machines Corporation

Mihaela A Balseanu

Li-Qun Xia

Ning Li

Victor Nguyen

Mark Joseph Saly

Derek R Witty

Hichem M'Saad

Mei-Yee Shek

Cong Trinh

Bhaskar Jyoti Bhuyan

Vladimir Zubkov

Keiichi Tanaka

Maribel Maldonado-Garcia

Shuaidi Zhang

Amir Hamed Al-Bayati

Isabelita Roflox

Wenbo Yan

David P Thompson

Suketu Arun Parikh

Reza Arghavani

Tsutomu Tanaka

Atif Noori

Jia Lee

Zhelin Sun

Abhijit Basu Mallick

Son Van Nguyen

Alfred Grill

Anchuan Wang

John C Forster

Michael Santiago Cox

Thomas Knisley

Stephan Alan Cohen

Tomohiko Kitajima

Thomas J Haigh, Jr

Rongping Wang

Tzu-Fang Huang

Atashi Basu

Mario Dave Silvetti

Chang Seok Kang

Kenichi Ohno

Steven D Marcus

Weifeng Ye

Lisa J Enman

Keenan Navarre Woods

Vijayabhaskara Venkatagiriyappa

Jeong-Uk Huh

Kurt Fredrickson

Ran Liu

Srinivas D Nemani

Mei Yin Chang

Ellie Y Yieh

Philip Allan Kraus

Mehul B Naik

Christopher Dennis Bencher

Deenesh Padhi

Mahendra Pakala

Alexandros T Demos

Xinliang Lu

Thai Cheng Chua

Mandyam Sriram

Chien-Teh Kao

Young Seen Lee

Kang Sub Yim

Sanjay S Natarajan

Lin Xue

Jianxin Lei

Jaesoo Ahn

Lakmal Charidu Kalutarage

Dongqing Yang

Gill Yong Lee

Hang Yu

Rajesh Prasad

Sung-Kwan Kang

Sanjay G Kamath

Kyu-Ha Shim

Patrick Reilly

David Michael Thompson

Haichun Yang

Abhishek Chowdhury

Priyadarshi Panda

Yongmei Chen

Yijun Liu

Xiaolan Ba

Nobuyuki Sasaki

Wenting Hou

Li Yan Miao

Alexander Viktorovich Garachtchenko

William John Durand

Aaron Dangerfield

Meiyee Shek

Vinayak Veer Vats

Deven Matthew Raj Mittal

Yu Jin

Sriharish Srinivasan

In Seok Hwang

Changling Li

Jin Ho Jeon

Meiyee (Maggie Le) Shek

Qi Gao

Jonathan Germain

Provided are self-aligned double patterning methods including feature trimming. The SADP process is performed in a single batch processing chamber in which the substrate is laterally moved between sections of the processing chamber separated by gas curtains so that each section independently has a process condition.

Self-aligned double patterning with spatial atomic layer deposition

Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250° C. to form a silicon nitride film with a low etch rate without damaging the metal surface.

Methods and apparatus for low temperature silicon nitride films

Methods and apparatus for processing a substrate are provided herein. For example, a method of processing a substrate comprises a) removing oxide from a metal layer disposed in a dielectric layer on the substrate disposed in a processing chamber, b) selectively depositing a self-assembled monolayer (SAM) on the metal layer using atomic layer deposition, c) depositing a precursor while supplying water to form one of an aluminum oxide (AlO) layer on the dielectric layer or a low-k dielectric layer on the dielectric layer, d) supplying at least one of hydrogen (H) or ammonia (NH) to remove the self-assembled monolayer (SAM), and e) depositing one of a silicon oxycarbonitride (SiOCN) layer or a silicon nitride (SiN) layer atop the metal layer and the one of the aluminum oxide (AlO) layer on the dielectric layer or the low-k dielectric layer on the dielectric layer.

Methods and apparatus for selective etch stop capping and selective via open for fully landed via on underlying metal

Methods of depositing thin films for an electronic device, for example a semiconductor device include applying a first pulsed plasma with or without a reactant and a second continuous plasma with a reactant.

Thin layer deposition with plasma pulsing

Methods of manufacturing memory devices are provided. The methods improve the quality of a selectively deposited silicon-containing dielectric layer. The method comprises selectively depositing a silicon-containing dielectric layer in a recessed region of a film stack. The selectively deposited silicon-containing dielectric layer is then exposed to a high-density plasma and annealed at a temperature greater than 800 ° C. to provide a silicon-containing dielectric film having a wet etch rate of less than 4 Å/min.

Sequential plasma and thermal treatment

Methods and apparatus for forming a conformal SiCON film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a low temperature steam annealing process to form a film resistant to damage by rapid thermal processing or ashing. The film is treated by rapid thermal processing and then subjected to a high temperature anneal to form a film with a low dielectric constant.

Methods and apparatus for deposition of low-k films

Methods for atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X); and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.

Deposition of low-k films

Silyl pseudohalides having a general formula of RSiX, where n is a range of 1-4, each R is independently selected from H, alkyl, alkenyl, aryl, amino, alkyl amino, alkoxide, and phosphine groups, and each X is a pseudohalide selected from nitrile, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate and isoselenocyanate are disclosed. Further, some embodiments of the disclosure provide methods for depositing silicon-containing films using silyl pseudohalides.

Silyl pseudohalides for silicon containing films

Described is selective deposition of a silicon nitride (SiN) trap layer to form a memory device. A sacrificial layer is used for selective deposition in order to permit selective trap deposition. The trap layer is formed by deposition of a mold including a sacrificial layer, memory hole (MH) patterning, sacrificial layer recess from MH side, forming a deposition-enabling layer (DEL) on a side of the recess, and selective deposition of trap layer. After removing the sacrificial layer from a slit pattern opening, the deposition-enabling layer (DEL) is converted into an oxide to be used as blocking oxide.

Confined charge trap layer

Methods and precursors for selectively depositing a metal film on a silicon nitride surface relative to a silicon oxide surface are described. The substrate comprising both surfaces is exposed to a blocking compound to selectively block the silicon oxide surface. A metal film is then selectively deposited on the silicon nitride surface.

Methods and precursors for selective deposition of metal films

Apparatus and methods to control the phase of power sources for plasma process regions in a batch process chamber. A master exciter controls the phase of the power sources during the process sequence based on feedback from the match circuits of the respective plasma sources.

Methods and systems to modulate film stress

Methods of forming a stack without damaging underlying layers are discussed. The encapsulation layer and dielectric layer are highly conformal, have low etch rates, and good hermeticity. These films may be used to protect chalcogen materials in PCRAM devices or any substrates sensitive to oxygen or moisture. Some embodiments utilize a two-step process comprising a first ALD process to form an encapsulation layer and oxidation process to form a dielectric layer.

Low temperature silicon nitride/silicon oxynitride stack film with tunable dielectric constant

Methods of depositing an encapsulation stack without damaging underlying layers are discussed. The encapsulation stacks are highly conformal, have low etch rates, low atomic oxygen concentrations, good hermeticity and good adhesion. These films may be used to protect chalcogen materials in PCRAM devices. Some embodiments utilize a two-step process comprising a first ALD process to form a protective layer and a second plasma ALD process to form an encapsulation layer.

Multilayer encapsulation stacks by atomic layer deposition

Methods for plasma enhanced atomic layer deposition (PEALD) of low-&#x3ba; films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formula (I) wherein R, R, R, R, R, and Rare independently selected from hydrogen (H), substituted alkyl, or unsubstituted alkyl; purging the processing chamber of the silicon precursor; exposing the substrate to a carbon monoxide (CO) plasma to form one or more of a silicon oxycarbide (SiOC) or silicon oxycarbonitride (SiOCN) film on the substrate; and purging the processing chamber.

Low-k films

Methods for modifying a susceptor having a silicon carbide (SiC) surface comprising exposing the silicon carbide surface (SiC) to an atmospheric plasma are described. The method increases the atomic oxygen content of the silicon carbide (SiC) surface.

Plasma induced modification of silicon carbide surface

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Santa Clara, CA, United States of America

Mihaela A Balseanu