Samsung Electronics Co., Ltd.

Migyeong Gwon

Youngmook Oh

Kyungseok Min

Sughyun Sung

Seongjin Nam

InWon Park

Hyunggoo Lee

Hyungdong Kim

A semiconductor device includes a fin structure which vertically protrudes from a substrate and extends in a first direction parallel to a top surface of the substrate. The fin structure includes a lower pattern and an active pattern vertically protruding from a top surface of the lower pattern. The top surface of the lower pattern includes a flat portion substantially parallel to the top surface of the substrate. The lower pattern includes a first sidewall extending in the first direction and a second sidewall extending in a second direction crossing the first direction. The first sidewall is inclined relative to the top surface of the substrate at a first angle greater than a second angle corresponding to the second sidewall that is inclined relative to the top surface of the substrate.

Semiconductor device and method for manufacturing the same

Growing community of inventors

Seoul, South Korea

Migyeong Gwon