Advanced Micro Devices Corporation

Miguel Santana, Jr

Robert Powell

Michael R Bruce

Rama Rao Goruganthu

Thomas Chu

James F Buller

Brennan V Davis

Shyam G Garg

Seth Prejean

Ronald M Potok

Charles Ray Mathews

Stephen A Jones

Alfredo V Herrera

Markangelo S D'Souza

A method includes determining a transmission of a transmissive window and a transmission of a transmissive fluid. In addition, an infrared emission of the transmissive window is determined along with an infrared emission of the transmissive fluid for at least one temperature. In a system that has an infrared sensor and an optical pathway to the infrared sensor, the transmissive window and the transmissive fluid are placed in the optical pathway. A semiconductor chip is placed in the optical pathway proximate the transmissive fluid. Radiation from the optical pathway is measured with the infrared sensor. An emissivity of the semiconductor chip is determined using the measured radiation and the determined transmissions and emissions of the transmissive window and the transmissive fluid.

Infrared sensor and method of calibrating the same

Various devices for mounting circuit devices and methods of making the same are provided. In aspect, a device is provided that includes a member for holding an integrated circuit. The member contains a first plurality of carbon nanotubes to enhance the thermal conductivity thereof. At least one conductor member projects from the member. In another aspect, a method of fabricating an interface for an electronic component is provided that includes forming a member containing a first plurality of carbon nanotubes and forming at least one conductor on the member.

Thermally conductive integrated circuit mounting structures

Various probe systems and probes are provided. In one aspect, a probe is provided that includes a base and a first member coupled to the base. The first member has a first tip for probing a circuit device. A first actuator is coupled to the first member for moving the first member relative to the base. Electrical and/or topographical probing is possible.

Dynamically adjustable probe tips

Various methods of hot-electron imaging a workpiece are provided. In one aspect, a method of examining a workpiece is provided that includes directing a first photon at a photodetector at a first known time and stimulating a circuit device of the workpiece at a second known time to produce a condition in the circuit device conducive to photon emission. At least one photon emitted by the circuit device in response to the stimulation is detected. The first photon increases the quantum efficiency of the photodetector in detecting the at least one photon. The detection of the at least one photon relative to the first known time and the second known time is time correlated to temporally distinguish the first photon and the at least one photon and to temporally correlate the stimulation of the circuit device to the detection of the at least one photon.

Photon detection enhancement of superconducting hot-electron photodetectors

Various embodiments of a semiconductor-on-insulator substrate incorporating a Peltier effect heat transfer device and methods of fabricating the same are provided. In one aspect, a circuit device is provided that includes an insulating substrate, a semiconductor structure positioned on the insulating substrate and a Peltier effect heat transfer device coupled to the insulating substrate to transfer heat between the semiconductor structure and the insulating substrate.

Integrated circuit cooling device

Various microscopy probes and methods of fabricating the same are provided. In one aspect, a method of fabricating a microscopy probe is provided that includes providing a member and forming a first film on the member. The first film fosters growth of carbon nanotubes when exposed to a carbon-containing compound. A second film is formed on the first film. The second film has an opening therein that exposes a portion of the first film. A carbon nanotube is formed on the exposed portion of the first film.

Nanotube tip for atomic force microscope

A method for position-selective and material-selective etching of silicon, and examination structures formed using the method, are presented. A semiconductor topography is exposed to an electron beam in the presence of xenon difluoride (XeF ) gas. The beam is scanned over a portion of the semiconductor topography, and silicon portions of the topography contacted by the electron beam and the XeF gas are etched. Non-silicon portions, such as dielectrics, metals, and/or metal silicides, are not believed to be etched. Shorter exposure times may be used to remove polycrystalline silicon portions of a topography, while leaving monocrystalline silicon portions intact. Removal of silicon and non-silicon portions of the topography by other means may be used to expose silicon portions of the topography. The electron beam controlled etching recited herein may be used alone or combined with such removal by other means to form examination structures for use in evaluation of semiconductor manufacturing techniques.

Position-selective and material-selective silicon etching to form measurement structures for semiconductor fabrication

An SOG plasma etch process is presented which is optimized for selectivity to PECVD silicon nitride. The present process also produces a uniform etch across the exposed surface of a semiconductor wafer. The etch process finds utility in dielectric-SOG-dielectric structures used as passivation layers. Silicon nitride is deposited using a PECVD technique to form the dielectric layers. By etching SOG at a faster rate than the rate at which it etches PECVD silicon nitride, the SOG plasma etch process removes enough of the SOG layer to prevent delamination problems associated with SOG layers interposed between dielectric layers without significantly reducing the thickness of the first dielectric layer. SOG remains only in troughs between closely-spaced interconnects and adjacent to the vertical steps between widely-spaced interconnects. Flow rates of He, CHF.sub.3, and N.sub.2 gases are established through a reaction chamber of a plasma etch system. The method includes pre-stabilizing steps, followed by an etch step, which is then followed by a post-stabilizing step and a particle removal or by-product flush step.

Growing community of inventors

Buda, TX, United States of America

Miguel Santana, Jr