Micron Technology Incorporated

Miguel Mares

Marco Sforzin

Daniele Balluchi

Giorgio Servalli

Angelo Visconti

Amitava Majumdar

Massimiliano Patriarca

Garth N Grubb

Senthil Murugan Thangaraj

Correctable error pattern information for a memory device can be based on data received from or using a data pin of the memory device. The memory device can include, for example, a DRAM device comprising an array of memory cells. Based on the error pattern information, firmware or software can be used to identify respective physical portions of the array comprising data with correctable errors. In an example, one or more fault locations in the memory device can be identified, the fault location corresponding to multiple cells in the array and comprising the data with correctable errors. In response to identifying the fault location in the array, one or more memory pages corresponding to the location(s) can be offlined or removed from an addressable memory space. In an example, the memory device comprises a portion of a compute express link (CXL) system.

Memory failure prediction and mitigation

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Meridian, ID, United States of America

Miguel Mares