Columbia University

United States of America As Represented by the Secretary of the Air Force

Michigan Technological University

Miguel Levy

Richard Osgood, Jr

Antonije M Radojevic

Ramy El-Ganainy

Junichiro Fujita

Turhan K Carroll

Richard M Osgood

A non-reciprocal coupler isolator is provided including a first waveguide. The first waveguide includes a magnetic cladding cover layer magnetized transversely to a propagation direction of the first waveguide. A second waveguide is positioned adjacent to the first waveguide and separated by a gap. The second waveguide includes a non-magnetic cladding cover layer with a refractive index that matches a refractive index of the magnetic cladding cover layer of the first waveguide.

Nonreciprocal coupler isolator

A magneto-optical isolator () for an optical circuit. The isolator includes a substrate, and an optical channel () disposed next to the substrate. The optical channel and substrate are configured to transmit optical radiation within the optical channel. The isolator further includes a photonic-crystal rotator () formed with the substrate and the optical channel. The rotator has at least one defect () and magnetic (M) and non-magnetic (N) materials.

Magneto-photonic crystal isolators

A device and method for optical isolation for use in optical systems is disclosed. The device provides for a waveguide optical isolator fabricated using two arms, made of optical waveguides comprising magneto-optical material, in a Mach-Zehnder interferometer configuration. The device of the present invention operates using the TM mode of a light wave and, thus, does not require phase-matching of TM and TE modes. Further, the present invention does not use polarizers to extinguish the optical feed-back.

Waveguide mach-zehnder optical isolator utilizing transverse magneto-optical phase shift

A method for fabricating ultra-thin single-crystal metal oxide wave retarder plates, such as a zeroth-order X-cut single-crystal LiNbO half-wave plate, comprises ion implanting a bulk birefringent metal oxide crystal at normal incidence through a planar major surface thereof to form a damage layer at a predetermined distance d below the planar major surface, and detaching a single-crystal wave retarder plate from the bulk crystal by either chemically etching away the damage layer or by subjecting the bulk crystal having the damage layer to a rapid temperature increase to effect thermally induced snap-off detachment of the wave retarder plate. The detached wave retarder plate has a predetermined thickness d dependent on the ion implantation energy. A half-wave plate fabricated in accordance with this method may be used in conjunction with an optical waveguide section to form a TE-TM polarization mode converter by mounting the half-wave plate in a groove in the wageguide section perpendicular to the direction of wave propagation therein, bonding the half-wave plate to the back-end facet of the waveguide section or bonding the half-wave plate to the front-end facet of the waveguide section. In each case the normal mode axes of the half-wave plate is at 45&deg; with respect to the direction of the electric field vector of the TE or TM mode of propagation in the waveguide section.

Method for fabricating ultra thin single-crystal metal oxide wave retarder plates and waveguide polarization mode converter using the same

A method is provided for detaching a single-crystal film from an epilayer/substrate or bulk crystal structure. The method includes the steps of implanting ions into the crystal structure to form a damage layer within the crystal structure at an implantation depth below a top surface of the crystal structure, and chemically etching the damage layer to effect detachment the single-crystal film from the crystal structure. The thin film may be detached by subjecting the crystal structure with the ion implanted damage layer to a rapid temperature increase without chemical etching. The method of the present invention is especially useful for detaching single-crystal metal oxide films from metal oxide crystal structures. Methods for enhancing the crystal slicing etch-rate are also disclosed.

Slicing of single-crystal films using ion implantation

A method is provided for detaching a single-crystal film from an epilayer/substrate or bulk crystal structure. The method includes the steps of implanting ions into the crystal structure to form a damage layer within the crystal structure at an implantation depth below a top surface of the crystal structure, and chemically etching the damage layer to effect detachment the single-crystal film from the crystal structure. The method of the present invention is especially useful for detaching single-crystal metal oxide films from metal oxide crystal structures.

Crystal ion-slicing of single-crystal films

In a polarization rotator device, a thin-film magneto-optic medium is magnetized by a thin-film magnet. To serve as an optical isolator, the device may include polarizers. In such an optical isolator, in which the magneto-optic medium was formed as a Bi-YIG triple-layer structure, and the thin-film magnet as a single-crystal iron-cobalt layer, an extinction ratio better than -20 dB was realized.

Growing community of inventors

Chassell, MI, United States of America

Miguel Levy