Micron Technology Incorporated

Mieko Kojima

Yuki Miura

Tetsuya Arai

Kazuyuki Morishige

Guangcan Chen

Disclosed herein is an apparatus that includes a first wiring layer including first and second conductive patterns extending in a second direction and coupled to source and drain regions, respectively, and a second wiring layer including third and fourth conductive patterns extending in the second direction and coupled to the first and second conductive patterns, respectively. The first conductive pattern has first and second sections arranged in the second direction, and the second conductive pattern has third and fourth sections arranged in the second direction. The first and fourth sections are arranged in a first direction, and the second and third sections are arranged in the first direction. The third conductive pattern covers the first section without covering the second section. The fourth conductive pattern covers the third section without covering the fourth section.

Semiconductor device having output buffer

Disclosed herein is an apparatus that includes a first buffer circuit, a plurality of first driver circuits configured to drive the first buffer circuit, and a plurality of first switch circuits configured to supply an operation voltage to the first driver circuits, respectively. The first driver circuits are collectively arranged in a first region in a matrix, and the first switch circuits are collectively arranged in a second region different from the first region.

Driver circuit equipped with power gating circuit

Disclosed herein is an apparatus that includes a rust buffer circuit, a plurality of first driver circuits configured to drive the first buffer circuit, and a plurality of first switch circuits configured to supply an operation voltage to the first driver circuits, respectively. The first driver circuits are collectively arranged in a first region in a matrix, and the first switch circuits are collectively arranged in a second region different from the first region.

Apparatuses in data input/output circuits of a semiconductor device are described. An example apparatus includes an output driver and a pre-output driver. The pre-output driver includes: an output terminal coupled to the output driver and provides an output signal to the output driver; an output stage that receives a data signal and provides the output signal to the output terminal responsive, at least in part, to the data signal; and a slew rate control stage coupled to the output stage and controls a current flowing through the output stage. The output stage is disposed between the slew rate control stage and the output terminal.

Wiring with external terminal

Apparatuses for providing external terminals of a semiconductor device are described. An example apparatus includes: a pad formation area including a plurality of pads disposed at an edge of the apparatus; a peripheral circuit area including a plurality of circuit blocks coupled to a memory cell array, each circuit block of the plurality of circuit blocks including a via disposed at a side opposite to the pad formation area with respect to each circuit block; and a plurality of conductors, each conductor coupling the via to the corresponding pad, and crossing over, at least in part, an area in the peripheral circuit area that is outside the circuit block comprising the via.

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Tokyo, Japan

Mieko Kojima