Nec Electronics Corporation

Renesas Electronics Corporation

Mieko Hasegawa

Toshiyuki Takewaki

Daisuke Oshida

Yasuaki Tsuchiya

Masayuki Hiroi

Manabu Iguchi

Takuji Onuma

Toshiji Taiji

Takaharu Kunugi

Hironori Toyoshima

Hiroaki Nanba

Ichiro Honma

Yasutaka Nakashiba

Hidemitsu Aoki

Takeshi Takeda

Yorinobu Kunimune

Takamasa Itou

A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided.

Method of manufacturing semiconductor device

The present invention provides a semiconductor device comprising a metal interconnect having considerably improved electromigration resistance and/or stress migration resistance. The copper interconnectcomprises a silicon-lower concentration regionand a silicon solid solution layerdisposed thereon. The silicon solid solution layerhas a structure, in which silicon atoms are introduced within the crystal lattice structure that constitutes the copper interconnectto be disposed within the lattice as inter-lattice point atoms or substituted atoms. The silicon solid solution layerhas the structure, in which the crystal lattice structure of copper (face centered cubic lattice; lattice constant is 3.6 angstrom) remains, while silicon atoms are introduced as inter-lattice point atoms or substituted atoms.

Semiconductor device and method for manufacturing same

A semiconductor deviceincludes a semiconductor substrate, insulating interlayer group(first insulating interlayer group), insulating interlayer group(second insulating interlayer group), and seal ring(guard ring). The insulating interlayer groupis formed on the semiconductor substrate. The insulating interlayer groupis formed on the insulating interlayer group. The insulating interlayer groupis formed by an insulating material having a lower dielectric constant than that of the insulating interlayer group. The seal ringis provided so as to surround the circuit forming regions Dand D. The seal ringpenetrates through the interface between the insulating interlayer groupand the insulating interlayer groupand is provided apart from the semiconductor substrate

Semiconductor device guard ring

Method of manfacturing semiconductor device

Growing community of inventors

Kanagawa, Japan

Mieko Hasegawa