Taiwan Semiconductor Manufacturing Comp. Ltd.

Mickey Hsieh

Kuo-Chi Tu

Kuo-Ching Huang

Chun-Yang Tsai

Chao-Yang Chen

Cheng-Jun Wu

Pili Huang

Various embodiments of the present disclosure are directed towards a ferroelectric memory device. The ferroelectric memory device includes a pair of source/drain regions disposed in a semiconductor substrate. A gate dielectric is disposed over the semiconductor substrate and between the source/drain regions. A first conductive structure is disposed on the gate dielectric. A ferroelectric structure is disposed on the first conductive structure. A second conductive structure is disposed on the ferroelectric structure, where both the first conductive structure and the second conductive structure have an overall electronegativity that is greater than or equal to an overall electronegativity of the ferroelectric structure.

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Hsin-Chu, Taiwan

Mickey Hsieh