Canon Kabushiki Kaisha

Michiyo Nishimura

Yoshikazu Banno

Ryoji Fujiwara

Yoji Teramoto

Kazushi Nomura

Toshihiko Takeda

Keisuke Yamamoto

Hisaaki Kawade

Kenji Nakamura

Masao Majima

Jun Nitta

Shunsuke Murakami

Tomoko Maruyama

Toshikazu Onishi

Kazuya Miyazaki

Toru Nakata

Takeo Tsukamoto

Ichiro Nomura

Toshikazu Ohnishi

Masato Yamanobe

Hirokatsu Miyata

Fumio Kishi

Takashi Noma

Daisuke Sasaguri

Kazuhiro Takada

Yuichi Handa

Takahiro Horiguchi

Seijiro Kato

Tohru Nakata

Kumiko Uno

There is provided an electron source including: an insulating substrate; a first wiring that is arranged on the insulating substrate; a second wiring that is arranged on the insulating substrate and intersects with the first wiring; and an electron-emitting device having a cathode electrode provided with an electron-emitting member and a gate electrode arranged above the cathode electrode, which is arranged on the insulating substrate and is separated from an intersecting portion of the first wiring with the second wiring; wherein the first wiring is arranged on the second wiring via an insulating layer; the gate electrode is provided with a plurality of slit-like openings that is arranged in substantially parallel at intervals; and the opening is arranged so that an extended line in a longitudinal direction thereof intersects with the first wiring.

Electron source, image display apparatus, and information display reproducing apparatus

A manufacturing method of an electron-emitting device including the steps of: preparing a base substrate provided with an insulating or semi-conducting layer in advance and exposing the layer to an atmosphere which contains neutral radical containing hydrogen. It is preferable that the insulating or semi-conducting layer contains metal particles; the insulating or semi-conducting layer is a film containing carbon as a main component; the neutral radical containing hydrogen contains any of H., CH., CH., and CH. or mixture gas thereof; compared with a density of a charged particle in the atmosphere, a density of the neutral radical containing hydrogen in the atmosphere is more than 1,000 times; and a step of exposing the insulating or semi-conducting layer to the atmosphere is a step of making a hydrogen termination by using a plasma apparatus provided with a bias grid.

Electron-emitting device, electron source, image display apparatus, and manufacturing method of electron-emitting device

An electron-emitting device according to this invention has a cathode electrode, a first electrode, a second electrode, an insulating layer, a gate electrode, and an electron-emitting member. The gate electrode, the insulating layer, and the first electrode respectively have an opening communicating with each other. The electron-emitting member is provided on the cathode electrode, and at least a portion of the electron-emitting member is exposed in the opening. The second electrode is provided in the opening of the first electrode and electrically connected to the cathode electrode.

The invention is to provide a producing method for an electron emitting device of field emission type, having sufficient on/off characteristics and capable of efficient electron emission at a low voltage. There is provided a producing method for an electron emitting device including steps of preparing a plurality of electroconductive particles each covered with an insulation material having a thickness of 10 nm or less at least on a part of a surface of the particle, and forming a dipole layer on a surface of the insulation material covering each of the plurality of electroconductive particles.

Producing method for electron-emitting device and electron source, and image display apparatus utilizing producing method for electron-emitting device

A method of producing an electron emission device having a low threshold electric field needed to emit electrons without unintentional electron emission includes a first step of preparing a first conductive film, second conductive film, and a material which constitutes an electron emission part connected to the first conductive film, and a second step of setting a threshold electric field strength, which is needed to start electron emission in a situation where a higher electric potential is applied to the first conductive film than that applied to the second conductive film, to a value greater than a threshold electric field strength, which is needed to start electron emission in a situation where a higher electric potential is applied to the second conductive film than that applied to the first conductive film.

Method of producing an electron emission device, method of producing an electron source, method of producing an image display device, and method of driving an electron emission device

A method of manufacturing an electron-emitting device with a stable electrical characteristics without variation per each of the devices is provided, by forming, on a substrate, a cathode electrode, a carbon layer on the cathode electrode, and a gate electrode, disposing an anode electrode, and applying to the carbon layer a voltage higher than that at a driving of the electron-emitting device.

Method of manufacturing electron-emitting device and method of manufacturing image display apparatus

A method for manufacturing an electron emission element comprising, between its electrodes, a conductive film having an electron emission section. The method comprising the steps of forming a gap in the conductive film located between the electrodes, and applying a voltage between the electrodes in an atmosphere that has an aromatic compound with a polarity or a polar group and in which the partial pressure ratio of water to the aromatic compound is 100 or less.

Method for manufacturing electron emission element, electron source, and image forming apparatus

Disclosed is an electron-emitting device, an electron source, and an image-forming apparatus that have uniform electron-emitting characteristics, emit electron beams whose diameters are small, have simple constructions, and are easy to be manufactured. The electron-emitting device comprising: a first electrode arranged on a surface of a substrate; an insulating layer arranged on the first electrode; a second electrode arranged on the insulating layer; and an electron-emitting film arranged on the second electrode, where the second electrode has two side surfaces that oppose each other in a direction parallel to the surface of the substrate, and the electron-emitting film is arranged so as to be shifted toward one of the two side surfaces.

Method of driving image-forming apparatus and apparatus thereof

An electron-emitting device having a small electron beam size is proposed. In order to provide a high definition image display device having high image quality by utilizing this type of electron-emitting device and an electron source, a cathode electrode ( ) has an opening which is trenched in a portion thereof, and further, the depth at which the opening is trenched is deep at a peripheral portion of the opening bottom face, and shallow at a central portion of the opening bottom face. A surface of an electron-emitting material is formed in a portion deeper than a boundary surface between the cathode electrode and an insulating layer.

Electron-emitting device and image-forming apparatus

A method for making an image forming apparatus includes an assembly of a first unit provided with an image-forming element and a second unit provided with electron emission devices. A bonding agent is provided at a bonding section of the first unit; the bonding agent is heated, and then the first unit and the second unit are bonded to each other. Alternatively, a bonding agent may be provided at a bonding section of the second unit; the bonding agent is heated, and then the electron emitting members of the electron emission devices are formed. After providing a bonding agent at a bonding section of the second unit, a spacer also may be provided between the bonding agent and the electron emission devices, and then the bonding agent may be heated. In addition, a bonding agent may be provided at a bonding section of the second unit, and then the bonding agent may be heated locally.

Method of making an image forming apparatus

A sodium-containing glass substrate has a modified surface on which an electroconductive film is to be formed. The modified surface is constituted of a layer of which sodium concentration is lower than the bulk body of the glass substrate, preferably with a sodium content ratio to all the metal elements of not greater than 2 atomic percent. The modified surface may contain a reduced amount of sulfur as compared to the bulk body of the glass substrate.

Method of manufacturing an electron source and image-forming apparatus using the electron source

Electron source substrate with low sodium upper surface

A method of manufacturing an electron-emitting device includes providing a pair of electrodes and an electroconductive thin film arranged between the electrodes. The method also includes a step of forming an electron-emitting region in the electroconductive film by the steps of partially modifying the composition of the electroconductive thin film with a chemical change to make a region of the electroconductive thin film have a higher resistivity than a resistivity in other regions, and causing an electric current to run through the electroconductive thin film to form the electron-emitting region in the region having the higher resistivity.

Growing community of inventors

Sagamihara, Japan

Michiyo Nishimura