Fuji Electric Co., Ltd.

III Holdings 1, LLC

Michiya Yamada

Yasushi Ogimoto

Yasuchi Ogimoto

Tatsuhiko Fujihira

Yukihiro Nishikawa

Mutsumi Kitamura

The invention provides a magnetoresistance element with a configuration such that a stable switching action is possible with a current flowing in response to the application of a unipolar electrical pulse, and a non-volatile semiconductor storage device using the magnetoresistance element. A magnetoresistance element-includes a magnetic tunnel junction portionconfigured by sequentially stacking a perpendicularly magnetized first magnetic body, an insulation layer, and a perpendicularly magnetized second magnetic body. The second magnetic bodyhas a configuration wherein a ferromagnetic layer and a rare earth-transition metal alloy layer are stacked sequentially from the insulation layerside interface. A heat assist layer-that heats the second magnetic bodywith a heat generated based on a current flowing through the magnetic tunnel junction portionis further provided, and the magnetization direction of the second magnetic bodyis reversed by the heating of the second magnetic body. A non-volatile semiconductor storage device-includes the magnetoresistance element-, a switching element connected in series to the magnetoresistance element-, information rewriting means that carries out a write and erase by causing a write current to flow through the magnetoresistance element-, and reading means that reads information stored from the amount of current flowing through the magnetoresistance element-

Magnetoresistance element and non-volatile semiconductor storage device using same magnetoresistance element

A magnetic miniaturized memory element with improved thermal stability of magnetization includes a first magnetic layer, an insulating layer that is formed on the first magnetic layer, a second magnetic layer that is formed on the insulating layer, and an expanded interlayer insulating film that comes into contact with side surfaces of the first and second magnetic layers, where at least one of the first magnetic layer and the second magnetic layer is strained and deformed so as to be elongated in an easy magnetization axis direction of the first magnetic layer or the second magnetic layer or compressive strain remains in any direction in the plane of at least one of the first magnetic layer and the second magnetic layer.

Magnetic memory element and storage device using the same

A method of manufacturing a super-junction semiconductor device is disclosed that allows forming a high concentration layer with high precision and improves the trade-off relationship between the Eoff and the dV/dt. The method comprises a step of forming a parallel pn layer and a step of forming a proton irradiated layer in the upper region of the pn layer. Then, heat treatment is conducted on the proton irradiated layer for transforming the protons into donors to form a high concentration n type semiconductor layer.

Method of manufacturing a super-junction semiconductor device

A semiconductor device and method of manufacturing the semiconductor device is disclosed in which the tradeoff relationship between the Eoff and the turning OFF dV/dt is improved at a low cost using a trench embedding method. The method comprises a step of forming a parallel pn layer that is a superjunction structure using a trench embedding method and a step of ion implantation into an upper part of an n type semiconductor layer, i.e., an n type column, forming a high concentration n type semiconductor region. This method improves the trade-off relationship between the Eoff and the turning OFF dV/dt as compared with a high concentration n type semiconductor region formed of an epitaxial layer. This method achieves shorter process time and lower cost in manufacturing because it eliminates the redundant repeating of steps performed in the conventional method of forming a superjunction structure through multi-stage epitaxial growth.

Semiconductor device and method of manufacturing the same

A magnetoresistance element is disclosed. The magnetoresistance element includes a magnetic tunnel junction portion configured by sequentially stacking a perpendicularly magnetized first magnetic body, an insulation layer, and a perpendicularly magnetized second magnetic body. The second magnetic body has a configuration wherein a ferromagnetic layer and a rare earth-transition metal alloy layer are stacked sequentially from the insulation layer side interface. A heat assist layer that heats the second magnetic body with a heat generated based on a current flowing through the magnetic tunnel junction portion is further provided.

An object of the invention is to ensure the thermal stability of magnetization even when a magnetic memory element is miniaturized. A magnetic memory element includes a first magnetic layer (), an insulating layer () that is formed on the first magnetic layer (), and a second magnetic layer () that is formed on the insulating layer (). At least one of the first magnetic layer () and the second magnetic layer () is strained and deformed so as to be elongated in an easy magnetization axis direction of the magnetic layer () or () or compressive strain () remains in any direction in the plane of at least one of the first magnetic layer and the second magnetic layer.

A magnetic memory element capable of maintaining high thermal stability (retention characteristics) while reducing a writing current. The magnetic memory element includes a magnetic tunnel junction having a first magnetic body including a perpendicular magnetization film, an insulating layer, and a second magnetic body serving as a storage layer including a perpendicular magnetization film, which are sequentially stacked. A thermal expansion layer is disposed in contact with the magnetic tunnel junction portion. The second magnetic body is deformed in a direction in which the cross section thereof increases or decreases by the thermal expansion or contraction of the thermal expansion layer due to the flow of a current, thereby reducing a switching current threshold value required to change the magnetization direction.

A magnetic memory element having a memory cell of size 4Fis provided that realizes a crosspoint-type memory. In the magnetic memory element, a first magnetic layer, a third magnetic layer (spin polarization enhancement layer), an intermediate layer, a fourth magnetic layer (spin polarization enhancement layer), and a second magnetic layer are stacked in order. The intermediate layer is made of an insulating material or a nonmagnetic material. The second magnetic layer is composed of a ternary alloy of gadolinium, iron and cobalt, a binary alloy of gadolinium and cobalt, or a binary alloy of terbium and cobalt. Alternatively, the first magnetic layer is composed of a ternary alloy of terbium, iron and cobalt, or a binary alloy of terbium and cobalt.

Magnetoresistance element and storage device using the same

A power converter includes a small-sized inductor connected to an AC voltage input line for power factor correction and a filter for suppressing conduction noise. The inductor is connected to a rectifier and comprises first and second windings and that are wound on a common magnetic core and loosely coupled with each other. A leakage inductance component of the inductor functions as an energy storage element in a main conversion operation and an excitation inductance component of the inductor functions as a noise reduction element for suppressing an conduction noise caused by on-off operation of a switching element.

Growing community of inventors

Hino, Japan

Michiya Yamada