Kabushiki Kaisha Toshiba

Michiya Takimoto

Toshiya Kotani

Soichi Inoue

Kazuya Fukuhara

Chikaaki Kodama

Hiromitsu Mashita

Fumiharu Nakajima

Hidefumi Mukai

Takafumi Taguchi

Ryota Aburada

Katsumi Iyanagi

According to one embodiment, a deviation amount distribution of a two-dimensional shape parameter between a mask pattern formed on a mask and a desired mask pattern is acquired as a mask pattern map. Such that a deviation amount of the two-dimensional shape parameter between a pattern on substrate formed when the mask is subjected to exposure shot to form a pattern on a substrate and a desired pattern on substrate fits within a predetermined range, an exposure is determined for each position in the exposure shot in forming the pattern on substrate based on the mask pattern map.

Exposure determining method, method of manufacturing semiconductor device, and computer program product

Pattern formation simulations are performed based on design layout data subjected to OPC processing with a plurality of process parameters set in process conditions. A worst condition of the process conditions is calculated based on risk points extracted from simulation results. The design layout data or the OPC processing is changed such that when a pattern is formed under the worst condition based on the changed design layout data or the changed OPC processing a number of the risk points or a risk degree of the risk points of the pattern is smaller than the simulation result.

Pattern generating method, method of manufacturing semiconductor device, and recording medium

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Kanagawa, Japan

Michiya Takimoto