Nuvoton Technology Corporation Japan

Panasonic Semiconductor Solutions Co., Ltd.

Michiya Otsuji

Kazuma Yoshida

Masaki Tamaru

Ryosuke Okawa

Eiji Yasuda

Tetsuyuki Fukushima

Hironao Nakamura

A semiconductor device includes a vertical field-effect transistor including: a low-concentration impurity layer; a body region; a gate trench; a gate insulating film; and a gate conductor. The body region includes: a first body portion containing an active region and has a constant depth; and a second body portion adjacent to the first body portion and includes a zone that has a limited length in a second direction orthogonal to the first direction along the top surface of the low-concentration impurity layer, and has a constant depth at a position shallower than the constant depth of the first body portion. The second body portion includes a portion in which a region having relatively high concentration of an impurity and a region having relatively low concentration of an impurity are alternately and periodically present in the first direction in a cross-sectional view of a plane orthogonal to the second direction.

Semiconductor device

A semiconductor device includes a first transistor and a second transistor. The first transistor includes a first body layer and a first connection part. The second transistor includes a second body layer and a second connection part. A second impedance, which is, in a path between the second connection part and the second body layer, inclusive, a maximum impedance seen by the first source electrode in the second body layer, is greater than a first impedance, which is, in a path between the first connection part and the first body layer, inclusive, a maximum impedance seen by the first source electrode in the first body layer.

Growing community of inventors

Shiga, Japan

Michiya Otsuji