Nippon Soken, Inc.

Denso Corporation

Michitoshi Onoda

Minoru Ohta

Tadashi Hattori

Kazuhiko Miura

Yutaka Hattori

Seizi Huzino

Tomio Kawakami

Yukio Iwasaki

Kenji Kanehara

Seiji Fujino

Mitsutaka Katada

Kazuhiro Tsuruta

Michihiro Makita

Masanori Fukutani

Takeshi Ninomiya

Hirokazu Kubo

A pressure sensor is composed of a cylindrical connector case firmly connected to a housing and a pressure-detecting chamber formed between the connector case and the housing. The pressure-detecting chamber is confined by a metal diaphragm, an outer peripheral portion of which is firmly held at a portion connecting the connector case and the housing. A relatively thick ring plate is connected to a mounting surface of the housing, and the outer peripheral portion of the metal diaphragm is sandwiched between the ring plate and a pushing plate placed on and connected to the ring plate. Thus, the pressure-detecting chamber containing a sensing element therein is surely sealed even if the housing is made of a material, such as aluminum, which is different from that of the metal diaphragm.

Pressure sensor having a metal diaphragm responsive to pressure

In a method of bonding semiconductor substrates, a plurality of the semiconductor substrates are first prepared. Surfaces of the semiconductor substrates are mirror-polished. The mirror-polished surface of at least one of the semiconductor substrates is then provided with a hydrophilic property in such a way that an oxide layer is formed on the mirror-polished surface by exposing the mirror-polished surface to an atmosphere of at least one of an oxygen ion and an oxygen radical. A water molecule is then adhered to the mirror-polished surface. The semiconductor substrates then contact with each other through the mirror-polished surface. The contacted semiconductor substrates are then heated. According to such a method of bonding, the semiconductor substrates are strongly bonded to each other with hardly an unbonded region even if the semiconductor substrates are heated at a low temperature.

Method of bonding semiconductor substrates

In a direct-heated flow measuring apparatus including a film resistor having a substrate supported by a supporting member in a passage, at least one face of the substrate on the upstream side thereof is sloped with respect to a fluid stream within the passage.

Direct-heated flow measuring apparatus having improved sensitivity

A flow measuring apparatus includes a resistance layer for detecting a flow rate within a passage and an additional resistance layer for burning off deposits formed by suspended particles the like, and both of the resistance layers are formed on only one substrate. When suspended particles are deposited on the substrate to form deposits thereon, the deposits are burned off and removed from the substrate by supplying power to the additional resistance layer.

Flow measuring apparatus

A direct-heated flow measuring apparatus including a substrate, a film resistor for generating heat and sensing its temperature, and a feedback control circuit for controlling the heat generated by the film resistor so that the temperature of the film resistor is a predetermined value. Also, provided in the substrate is an aperture or the like for throttling the heat transfer of the film resistor. Further, a reinforced structure is formed on the part of substrate where the aperture or the like is formed.

Direct-heated flow measuring apparatus

In a direct-heated flow measuring apparatus including a thin-plate sensing element supported by a supporting member in a passage, a sensing portion for generating heat and detecting the temperature thereof is positioned on the downstream side of the sensing element with respect to a fluid stream.

Direct-heated flow measuring apparatus having improved sensitivity and

In a direct-heated flow measuring apparatus including a film resistor having a substrate and a resistance layer thereon, the substrate is supported by a supporting member in a passage. Provided between the substrate and the supporting member is an adiabatic member for enhancing the adiabatic effect of the resistance layer. The substrate is adhered by adhesives having an excellent thermal conductivity coefficient to the adiabatic member, and the supporting member is also adhered by adhesives having an excellent thermal conductivity coefficient to the adiabatic member.

Direct-heated flow measuring apparatus having uniform characteristics

A film resistor for a flow measuring apparatus including: a substrate; a first insulating layer on the substrate; a platinum (Pt) pattern on the first insulating layer; and a second insulating layer on the platinum pattern. A titanium dioxide (TiO.sub.2) layer is provided between each of the first and second insulating layers and the platinum pattern.

Film resistor for flow measuring apparatus

A gas detecting sensor for precisely detecting the partial pressure of oxygen gas in the exhaust gases without being affected by the change of the temperature of the environment thereof, is disclosed. The sensor is provided with a ceramic base member, a film-shaped gas sensing element having a characteristic in response to the partial pressure of oxygen gas which is held by the base member so as to be exposed to the exhaust gases, a film shaped temperature sensing element having temperature coefficient of resistance substantially equal to that of the gas sensing element, which is held by the base member so as to be isolated from the exhaust gases, and an electric current wherein the gas and the temperature sensing elements are connected to each other in series to form an electric junction therebetween, from which output voltage is taken. In the preferred embodiment, the temperature sensing element is embedded within the base member and a heating member is further provided for maintaining both elements within a temperature range in which temperature coefficient of resistance of both elements are substantially equal to each other.

Gas detecting sensor

A high sensitive and high responsive gas detecting sensor for detecting the partial pressure of oxygen gas in the exhaust gases is disclosed. The sensor is provided with a sensing element having an electrical characteristic in response to the partial pressure of oxygen gas, a ceramic base member which supports the sensing element so that the sensing element is exposed to the exhaust gases, and electric current conducting means for supplying an electric current to the sensing element. The sensing element is formed of alloy ceramic material composed of 20 to 60 mol percent of cobalt monoxide, 20 to 60 mol percent of magnesium monoxide and 10 to 50 mol percent of nickel monoxide. In the preferred embodiment, the base member is formed into a plate shape and the sensing element is formed on the base member like a film.

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Toyohashi, Japan

Michitoshi Onoda