Sony Corporation

Michitaka Kubota

Hideaki Kuroda

Akira Nakagawara

Yoshiaki Hagiwara

Toshio Kobayashi

A semiconductor nonvolatile memory device improving reproducibility and reliability of insulation breakage of a silicon oxide film and capable of reducing the manufacturing cost and a method for production of the same, wherein each of the memory cells arranged in a matrix form has an insulating film breakage type fuse comprising an impurity region of a first conductivity type formed on a semiconductor substrate, a first insulating film formed on the semiconductor substrate while covering the impurity region, an opening formed in the first insulating film so as to reach the impurity region, and a first semiconductor layer of a first conductivity type, a second insulating film, and a second semiconductor layer of a second conductivity type successively stacked in the opening from the impurity region side, or has an insulating film breakage type fuse comprising an impurity region of a first conductivity type in the first semiconductor layer having an SOI structure, a first insulating film on the SOI layer, an opening reaching the impurity region, and a second insulating film and a second semiconductor layer of a second conductivity type stacked in the opening.

One time programmable semiconductor nonvolatile memory device and method for production of same

A semiconductor device capable of reducing a cell area without affecting the accuracy, capable of reducing the number of interconnection layers, and capable of realizing a hybrid circuit of a memory cell and peripheral circuit easily and at a low cost, including a bit line, a word line, control gate line, a capacitor with a first electrode connected to the word line, a read transistor comprising an NMOS connected between the bit line and a predetermined potential point and with a gate electrode connected to a second electrode of a capacitor, and a write transistor comprising an NMOS connected between the bit line and the second electrode of the capacitor and with a gate electrode connected to the control gate line.

Semiconductor device having a memory cell with a plurality of active elements and at least one passive element

A lower electrode of a capacitor is formed by a cylindrical conductive film and a pillar shaped conductive film disposed coaxially within the cylindrical conductive film. Consequently, in this capacitor, even if a plane area of the lower electrode is so small that double cylinder type cannot be realized, opposing area of the lower electrode and upper electrode is larger as compared to a structure in which the lower electrode is of single cylinder type. This invention proposes such a capacitor and a method of manufacturing thereof. As a result, it is possible to increase electric storage capacity if the plane area of the capacitor is the same and further miniaturize the capacitor if the electric storage capacity is the same.

Structure of capacitor for dynamic random access memory and method of manufacturing thereof

A history information recording apparatus for recording history information about product equipment integrally therewith and the product equipment having this history information recording apparatus are provided. The history information recording apparatus comprises a first storage means for storing primary history information, a second storage means for storing secondary history information, an input module in which the primary history information and/or the second history information is inputted to be stored in the first storage means and/or the second storage means respectively, and a read module for reading the primary history information from the first storage means and the secondary history information from the second storage means. The first and second storage means, the input module, and the read module are arranged in the product information.

Growing community of inventors

Kanagawa, Japan

Michitaka Kubota