Mitsubishi Denki Kabushiki Kaisha

Renesas Technology Corp.

Renesas Electronics Corporation

Michitaka Kimura

Toshihiro Iwasaki

Masatoshi Yasunaga

Satoshi Yamada

Kozo Harada

Kazuyuki Nakagawa

Yasumichi Hatanaka

Keiichiro Wakamiya

Norio Okada

Shintaro Yamamichi

Shinji Baba

Tomohiro Nishiyama

Shunichi Abe

Hirokazu Honda

Yoshihiro Tomita

Yoshihiro Kashiba

Junichi Arita

Masaki Watanabe

Naoto Ueda

Tatsuhiko Akiyama

Masashi Nishimoto

Ryuichiro Mori

Takeumi Kato

Zenzo Suzuki

Takanori Okita

Jun Ueno

Yoshikazu Shimote

A compact electronic device as a constituent element of a wireless communication system using a sensor. A first feature of the device is that a first semiconductor chip is bare-chip-mounted over a front surface of a first wiring board in the form of a chip and a second semiconductor chip is bare-chip-mounted over a second wiring board in the form of a chip. A second feature is that a wireless communication unit and a data processing unit which configure a module are separately mounted. A third feature is that the first and second wiring boards are stacked in the board thickness direction to make up the module (electronic device).

Electronic device

The joint reliability in flip chip bonding of a semiconductor device is enhanced. Prior to flip chip bonding, fluxis applied to the solder bumpsfor flip chip bonding over a substrate and reflow/cleaning is carried out and then flip chip bonding is carried out. This makes is possible to thin the oxide film over the surfaces of the solder bumpsand make the oxide film uniform. As a result, it is possible to suppress the production of local solder protrusions to reduce the production of solder bridges during flip chip bonding and enhance the joint reliability in the flip chip bonding of the semiconductor device.

Semiconductor device and manufacturing method therefor

A semiconductor device with improved quality and reliability is provided. In a UBM formed over an electrode pad located over a semiconductor substrate, the edge (end) of an Au film as an upper layer is located inside or in the same position as the edge (end) of a TiW film as a lower layer, which can suppress the formation of a suspended part in the Au film. This arrangement can prevent the occurrence of electrical short circuit between the adjacent pads due to the suspended part and the adhesion of the suspended part as foreign matter to the semiconductor substrate, thus improving the quality and reliability of the semiconductor device (semiconductor chip).

Manufacturing method of semiconductor device, and mounting structure thereof

A manufacturing method of the semiconductor device including a step of forming solder balls on the circuit face of a mother chip, a step of making flip chip bonding of the daughter chip after the step of forming solder balls on the circuit face of the mother chip, and a step of making flip chip bonding of the mother chip on a circuit board using the solder balls.

Manufacturing method of semiconductor device

The manufacturing method of the semiconductor device of the present invention has a step forming solder balls on the circuit face of a mother chip, a step making flip chip bonding of the daughter chip after the step forming solder balls on the circuit face of the mother chip, and a step making flip chip bonding of the mother chip on a circuit board using the solder balls.

In a semiconductor device, a semiconductor element is bonded to an insulating circuit board. A resin layer for bonding the semiconductor element to the insulating circuit board is extended so as to become greater in size than the semiconductor element. Further, the surroundings of the semiconductor element are sealed with resin. Reliability of mounting is improved by alleviating stress developing in a solder joint of the external electrodes of the circuit board.

Semiconductor device having an improved mounting structure

A semiconductor device includes a semiconductor chip, and a circuit substrate disposed such that the circuit substrate faces the semiconductor chip and is electrically connected to the semiconductor chip through a connection conductor. A pad electrode and a terminal electrode are formed on a surface of the semiconductor chip and a surface of the circuit substrate, respectively. The connection conductor is connected between the pad electrode and the terminal electrode. The surface of the semiconductor and the surface of the circuit substrate face each other. A conductive dummy pattern is formed on the facing surface of the semiconductor chip or the circuit substrate. A space between the facing surfaces is filled with nonconductive resin. With this arrangement, it is possible to make uniform the temperature distribution between the facing surfaces, thereby making the temperature and the viscosity of the nonconductive resin uniform to reduce attenuation of ultrasonic waves.

Semiconductor device

The invention is intended for rendering a CMOS camera compact and less costly. A semiconductor device constituting a CMOS camera system includes a lens unit which includes a wiring board having an image pick-up opening formed therein and a lens, and the lens is provided on one side of the wiring board and positioned opposite the image pick-up opening. An image pick-up semiconductor is provided on the other side of the wiring board, and is positioned opposite the image pick-up opening, and is connected to a connection section of the wiring board by means of flip-chip bonding. An image processing semiconductor is connected by means of flip-chip bonding to another connection section provided on the other side of the wiring board, and processes an image signal output from the image pick-up semiconductor.

Semiconductor device constituting a CMOS camera system

A semiconductor device includes a first substrate, a second substrate, a plurality of conductors, and supporting members. The first substrate has a plurality of electrode portions disposed on one side thereof. The second substrate has a plurality of electrode portions disposed on one side thereof. The conductors are for connecting the plurality of electrode portions of the first substrate to the plurality of electrode portions of the second substrate. The supporting members supporting the first substrate and the second substrate are disposed on a location where resonance caused by ultrasonic oscillation externally supplied is restrained in the state where the first substrate is connected to the second substrate. The supporting members prevent irregular oscillation and resonance caused by the ultrasonic oscillation.

The semiconductor device has a flip chip structure. The chip is electrically connected to the chip mounting member via function bumps provided on the chip. Dummy bumps acting against a local bending force of the chip are interposed between the chip and the chip mounting member.

A plurality of semiconductor chips are mounted on an insulating substrate with bumps and through use of dielectric resin for mounting purposes. The semiconductor chips are sealed with transfer mold resin through a single operation while remaining on the insulating substrate. Then, the plurality of semiconductor chips are separated together with the insulating substrate and the mounting resin into individual semiconductor devices. The productivity and reliability of packaged semiconductor devices is improved.

Method of manufacturing a packaged semiconductor device, and a semiconductor device manufactured thereby

An insulating resin sheet made from a thermosetting resin is provided on an insulating substrate in such a manner as to cover bonding pads provided on the insulating substrate. A lower chip is set on the insulating substrate in such a manner that bonding bumps connected to inner connection terminals of the lower chip break the insulating resin sheet to be in contact with the bonding pads. The insulating resin sheet is thermally cured and subsequently the bonding bumps are melted.

Semiconductor device and manufacturing method thereof

A semiconductor device allowing a mounting of a semiconductor substrate with narrow electrode pad interval on an insulated circuit board while securing a favorable insulation characteristic and a manufacturing method thereof are obtained. The semiconductor device includes an electrode pad formed on a semiconductor substrate; a connecting underlying metal film connected to the electrode pad; a connecting conductor establishing electrical conduction between the connecting underlying metal film and a terminal electrode on an insulated circuit board; and non-conductive resin surrounding the connecting conductor and filling a gap between the substrate and the insulated circuit board. Here, the connecting underlying metal film is not covered by the connecting conductor at least in a peripheral region including an outer peripheral portion thereof

A lower semiconductor element is mounted facing down on an insulating circuit board, and an upper semiconductor element is stacked facing up on the lower semiconductor element. Openings are provided in the insulating circuit board at a location facing the element electrodes of the lower semiconductor element, and the element electrodes of the lower semiconductor element are connected to the board electrodes on the lower surface of the insulating circuit board through the openings. Also, the element electrodes of the upper semiconductor element are connected to the board electrodes on the upper surface of the insulating circuit board. Thus, a high-density semiconductor device is provided by stacking a plurality of semiconductor elements.

Semiconductor device having stacked semiconductor elements

A resin sealed semiconductor device includes a lead frame having a die pad; a semiconductor element mounted on the die pad; a resin sealing the lead frame and the semiconductor element, the die pad including a plurality of through holes where the semiconductor element is mounted; and a resin film bonding the semiconductor element to the die pad.

Growing community of inventors

Tokyo, Japan

Michitaka Kimura