Sony Corporation

Brivention Pharmaceutical (shanghai) Inc.

Michio Yamamura

Kazuya Yonemoto

Tetsuya Iizuka

Kazushi Wada

Tetsuro Kumesawa

Koichi Harada

Takashi Fukusyo

Narito Tateishi

Hiroshi Terakawa

An object of this invention is to provide a composition for preventing and/or treating neurodegenerative diseases and cerebral infarction, and a composition for ameliorating learning disorders. Provided is a composition comprising a combination of a TRH analog and arundic acid.

Composition comprising combination of TRH analog with arundic acid, and pharmaceutically acceptable salt of arundic acid

A structure of a solid-state image sensing device applicable to an HDVS is disclosed in which at least one of the transmission paths for the drive pulses used for driving vertical registers and horizontal registers can achieve reduced propagation delays and signal distortions of the drive pulses. In the first preferred embodiment, a control gate for controlling the transfer of signal charges between the horizontal registers is constituted by a first polycrystalline silicon layer, a metal wiring layer is formed and is connected to the first polycrystalline silicon layer via contact regions and transfer electrodes provided for driving the horizontal registers are constituted by second and third semiconductor layers placed between the first polycrystalline silicon layer and the metal wiring layer without contacting the contact regions. In the second preferred embodiment, the control gate is formed of a wiring layer placed above the semiconductor layers constituting the transfer electrodes of the horizontal registers. In the third preferred embodiment, shunt wiring films are formed independently on the transfer electrodes for the vertical registers of an image portion and on the transfer electrodes for those of a storage portion.

Structure of solid-state image sensing devices

A solid state imager device having a semiconductor substrate which includes a substrate region of a first conductivity type, a light receiving area of a second conductivity type forming a light receiving section, a charge transfer section and a low impurity concentration region arranged under and contacting with the light receiving area and between the light receiving area and the substrate region, a forward electrode formed on the semiconductor substrate through a dielectric layer, and a charge transfer control electrode formed on the dielectric layer between the light receiving section and the charge transfer section, wherein the forward electrode is supplied with a voltage for forming a charge storage layer on a boundary plane between the dielectric layer and the forward electrode, and the edge of the transfer control electrode at the side of the light receiving area substantially coincides with the edge of the light receiving area at a side facing to the charge transfer section.

Solid state imager device

A solid state imager device having a substrate of a first conductivity type, a charge storage area of a second conductivity type formed on the substrate of the first conductivity type, and a forward electrode formed on the charge storage area of the second conductivity type through an insulating layer, and the forward electrode is alternately supplied with a first voltage for accumulating charges of the first conductivity type on a boundary between the charge storage area of the second conductivity type and the insulating layer and a second voltage so as to extend the depletion layer formed beneath the charge storage area of the second conductivity type.

Growing community of inventors

Tokyo, Japan

Michio Yamamura