Hitachi, Ltd.

Michio Ooue

Hiroaki Hachino

Ryoichi Sudo

Yoko Wakui

Takeshi Watanabe

Akio Mukoh

Yoshiharu Nagae

Masaaki Kitajima

Hideaki Kawakami

Tasao Soga

Fusaji Shoji

Tetsuo Ito

Fumio Nakano

Masato Isogai

Kenkichi Suzuki

Hidetoshi Abe

Mitsuru Ura

Kishiro Iwasaki

Yasutoshi Kurihara

Mamoru Sawahata

Yoshihiro Suzuki

Tomio Yasuda

Mitsuo Yanagi

Disclosed is a semiconductor device constructed such that among elements forming a brazing material for bonding an electrode on a semiconductor substrate to an external electrode, the amounts of those elements which react with the material of the electrode or external electrode and form a compound harder and more brittle than the electrode material are smaller on the portion coming into contact with the electrode or external electrode than at the other portions. A fabrication method of such a semiconductor device is also disclosed, which method involving the steps of laminating and depositing an at least two-layered metallic layer on the surface of the electrode on the semiconductor substrate or on the surface of the external electrode, bringing the electrodes of the at least two-layered metallic layer into intimate contact with each other while opposing one another, and bonding them together in the presence of the force of pressure applied to both electrodes while they are being heated to a temperature close to an eutectic temperature of an alloy consisting of the metals of the uppermost layer and subsequent layer, immediately therebelow, of the metallic layer.

Semiconductor device and fabrication method thereof

In an insulated type semiconductor device, a metal member is disposed between an insulating member and a circuit element which includes a semiconductor substrate. The metal member is a composite metal member having at least two different kinds of metal layers bonded to each other. In a preferred embodiment, in order to reduce undesirable effects caused by differences in the thermal coefficients .alpha..sub.I and .alpha..sub.S of the insulating member and the semiconductor substrate, respectively, the thermal expansion coefficient of said composite metal member as a whole .alpha..sub.M is adjusted in a range between .alpha..sub.I and .alpha..sub.S.

Insulated type semiconductor devices

A semiconductor device is disclosed which is provided with at least one flexible conducting film having an inner electrode portion and an outer electrode portion. The inner electrode portion is conductively bonded to at least one of two kinds of electrode films formed on one main surface of a semiconductor substrate, and has a form similar to the shape of the electrode film. The outer electrode portion is integrated with the inner electrode portion into one body but is not bonded to the electrode film. The conducting film can be previously bonded to a transparent insulating film, if desired, and is arranged in registry with the electrode film on the semiconductor substrate, while being supported by the insulating film. Accordingly, the inner electrode portion of the conducting film is bonded to the electrode film having a complicated pattern, readily and accurately. The inner electrode portion serves to reduce the electric resistance of the electrode film and to increase the current capacity of the electrode. If a transparent insulating film has been used, it can be removed after device formation, if desired.

Semiconductor device having ribbon electrode structure and method for

A liquid crystal display device comprising two substrates being provided in parallel to each other at a given distance and each having a Nesa film on the counterposed surface, at least one of the substrates being transparent, and a liquid crystal being filled between the substrates, the counterposed surfaces of the substrates each being coated with polymer of organosilicone compound having groups reacting with the substrates to a thickness of 300-1,500 .ANG. as an alignment film. The device has thick alignment films and good electrooptical characteristics.

Organosilicone homeotropic alignment layer with OH group

A novel alignment film for liquid crystal is prepared by depositing an organic solvent solution of an alkylalkoxy silane and an alkoxymetallic compound of Ti, Zr, Ge onto an electrode-side surface of substrate, and curing the solution on the substrate by heating. The alignment film shows good alignment for various types of liquid crystals and has long life.

Liquid crystal display device

A color liquid crystal display device wherein a nematic liquid crystal to which a dichroic dye and an optically active substance have been added is used as the liquid crystal layer and the amount of said optically active substance added is so selected as to fall in a range making steep the threshold voltage characteristics of the liquid crystal.

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Hitachi, Japan

Michio Ooue