Matsushita Electric Industrial Co., Ltd.

Michio Okajima

Akira Enokihara

Yasunao Okazaki

Toshiaki Nakamura

Minoru Tachibana

Kunihiko Minami

Takao Tohda

Masahiko Hashimoto

Shinichi Yamamoto

Minoru Kubo

Hiroyoshi Komobuchi

Masaaki Suzuki

Akio Takimoto

Osamu Kusumoto

Kazuyuki Sakiyama

Kentaro Setsune

Kazuo Yokoyama

Hisahito Ogawa

Akihisa Yoshida

Motoshi Shibata

Kunihiro Fujii

Kouzou Murakami

Mitihiko Takase

The present invention provides an antenna in which, on a dielectric substratehaving a back face on which a grounding conductor plateis disposed, a plurality of conductor elementsare arranged in a matrix of rows and columns. Each of the dielectric elementshas a size which cannot function as an antenna. Above the conductor elementsa connecting elementoverlapping two adjacent conductor elementsis disposed. Among the connecting elementssome cause the conductor elementson both sides to be in a conductive condition, and others cause the conductor elementson both sides to be in a non-conductive condition. The switching between the conductive and non-conductive conditions between the conductor elementscan be dynamically performed by a switching element.

Antenna and apparatus provided with the antenna

A surface acoustic wave device includes a piezoelectric substrate, a first interdigital transducer and a second interdigital transducer formed on the substrate so that the first and second interdigital transducers are opposed to each other. The substrate includes a doping region that is doped with a substance in at least one form selected from the group consisting of atoms, molecules and clusters in a surface between the first and second interdigital transducers.

Surface acoustic wave device and method for producing the same

An Al film is formed on a cap wafer and the Al film is patterned into a ring-shaped film. Dry etching is performed by using the ring-shaped film as a mask to form a drum portion enclosing a recess portion to provide a vacuum dome. After forming a depth of cut into the substrate portion of the cap wafer, the cap wafer is placed on a main body wafer having an infrared area sensor formed thereon. Then, the ring-shaped film of the cap wafer and the ring-shaped film of the main body wafer are joined to each other by pressure bonding to form a ring-shaped joining portion.

Semiconductor-based encapsulated infrared sensor and electronic device

The resonator of the present invention includes a cylindrical dielectric and a conductor film covering the surface of the dielectric in close contact therewith. The conductor film is constructed of a cylindrical portion and two flat portions, and is formed by subjecting the surface of the dielectric to metallization or the like. With the conductor film formed in close contact with the dielectric, deterioration of the Q value and the like caused by instability of connection at the corners can be suppressed even when a radio frequency induced current flows from the cylindrical portion over the two flat portions.

Resonator and high-frequency filter

Electronic device and method for manufacturing the same

A dielectric resonator filter comprises dielectric resonators, an enclosure having a main body, a lid, and partition walls, interstage-coupling tuning windows, interstage-coupling tuning bolts, input/output terminals, and input/output coupling probes. Resonance-frequency tuning members each composed of a conductor plate and a bolt coupled integrally thereto are attached to the enclosure lid. Undesired-mode suppressing means such as rings attached to the bolts of the resonance-frequency tuning members or bolts attached to the conductor plates or to the enclosure lid are disposed in an undesired-mode excitation space, whereby the occurrence of a disturbed characteristic in the pass band (or stop band) is suppressed.

Dielectric resonator filter

A phosphor thin film of a compound of zinc, cadmium, manganese or alkaline earth metals and an element of group VI is sandwiched by barrier layers having a larger energy gap than that of the phosphor thin film, and a plurality of the sandwich structures are accumulated thicknesswise to constitute a light-emitting device. The phosphor thin film ensures the confinement of injected electrons and holes within the phosphor thin film. The light-emitting device has a high brightness and a high efficiency.

Light-emitting thin film and thin film EL device

A novel type projection TV has a large size fluorescent screen bearing three kinds of dots or stripes of fluorescent material which emits visible lights of red, green and blue at excitation by UV-rays, which are emitted from UV-emitting CRTs' for red, green and blue pixel of image, respectively; and a mask having UV-light passing apertures or a lens array is disposed on light paths of the UV-rays to improve color purity,

Display apparatus and method of making the same

A fabrication method provides fine structures which have few carrier trap centers and light absorption levels and find applications in quantum wires and quantum boxes having arbitrary configurations at least within a two-dimensional plane. The fabrication method comprises the steps of having a sharp tip held in close proximity to the surface of a substrate 1 and having a metal constituting the tip evaporated from the top. Alternatively, a metal contained in ambient vapor or a solution decomposed by a tunnel current or the like is provided. The metal is deposited locally on the substrate surface. A finely structured crystal is grown on the locally deposited region by a vapor phase-liquid phase-solid phase reaction.

Fabrication method of fine structures

An organic light-emitting device having a light-emitting layer contains the polymer comprising a repeating unit of the formula:

Growing community of inventors

Neyagawa, Japan

Michio Okajima