Hitachi, Ltd.

Hitachi Chemical Company, Ltd.

Hitachi Engineering Services Co., Ltd.

Hitachi Engineering & Services, Inc.

Michio Ohue

Takuya Fukuda

Hidekatsu Onose

Yutaka Kobayashi

Ryuichi Saito

Katsuaki Saito

Tadasi Sonobe

Kazuo Suzuki

Shigeru Takahashi

Yukinobu Miyamoto

JaiHo Choi

Toshiya Satoh

Takeshi Tanaka

Yuichi Satsu

Atsuyoshi Koike

Toshio Miyamoto

Yutaka Misawa

Seikichi Tanno

Naohiro Momma

Kunio Miyazaki

Ryuji Watanabe

Yoshiyuki Tsuru

Yasuhiro Mochizuki

Osamu Miura

Masayoshi Naito

Fumiyuki Kanai

Yukio Ookoshi

Yohsuke Inoue

Kiyoshi Thukuda

Saburoo Ogawa

A semiconductor memory device has a plurality of memory cells in an array, into which the memory cells data is writable, and which can subsequently be read. Each memory cell has a switching element with one terminal connected to a bit line of the array another terminal connected to at least one ferroelectric capacitor, and a control terminal connected to a word line. The cell may then be operated to detect the change in polarization of the ferroelectric capacitor when a voltage is applied which is not sufficient to cause a change of state of the ferroelectric capacitor. Alternatively, a ferroelectric capacitor and a capacitor other than a ferroelectric capacitor is connected to the switching element. In a further alternative, a plurality of ferroelectric capacitors are connected to the switching element, so that different data are writable into each.

Semiconductor memory device and methods of operation thereof

Semiconductor memory device and method of operation thereof

A semiconductor integrated circuit apparatus according to the present invention has a capacitor formed in such a manner that a ferroelectric thin film is formed after a MOS transistor has been formed on a substrate thereof, a ferroelectric thin film made of, for example, PbZrTiO.sub.3 or SrTiO.sub.3 or the like is formed into a columnar shape to form electrodes positioned in direct contact with the side wall portions of said columnar ferroelectric thin film and the top portion is removed. As a result, a fact that an oxide of each electrode, which deteriorates the relative permittivity, is formed on the interface between the electrode and the ferroelectric material is prevented, and a large capacity can be realized with respect to the area of the substrate because the ferroelectric thin film is formed into the columnar and elongated shape, resulting in that the capacitance of the capacitor is not reduced in which the electrodes and the oxide dielectric material having a high permittivity are, in series, connected to each other. The capacitor is formed into a DRAM or an FRAM memory cell so as to realize a semiconductor memory revealing a high degree of integration and a high processing speed.

Capacitor for semiconductor integrated circuit

In a plasma processing apparatus which forms a gaseous raw material into a plasma by using electron cyclotron resonance and processes a substrate, leading-edge opening portions of an introduction tube into which a gaseous raw material is introduced are formed in the inner wall surface of the container in such a way that they do not project within the vacuum container. A heater is wound around the introduction pipe so that the opening portions thereof can be heated. With this construction, even if a gaseous raw material which is a liquid or solid at normal temperature and normal pressure is made to flow, the gaseous raw material can be prevented from being liquefied or solidified in the opening portions of the introduction pipe, and the opening portions of the introduction pipe can be prevented from being clogged. In addition, since there are no projections within the vacuum container, the propagation of microwaves is not impeded, making it possible to uniformity process the substrate.

Plasma processing apparatus and method of processing substrates by using

A semiconductor integrated circuit apparatus according to the present invention has a capacitor formed in such a manner that a ferroelectric thin film is formed after a MOS transistor has been formed on a substrate thereof, a ferroelectric thin film made of, for example, PbZrTiO.sub.3 or SrTiO.sub.3 or the like is formed into a columnar shape to form electrodes positioned in direct contact with the side wall portions of said columnar ferroelectric thin film, and the top portion is removed. As a result, a fact that an oxide of each electrode, which deteriorates the relative permittivity, is formed on the interface between the electrode and the ferroelectric material is prevented, and a large capacity can be realized with respect to the area of the substrate because the ferroelectric thin film is formed into the columnar and elongated shape, resulting in that the capacitance of the capacitor is not reduced in which the electrodes and the oxide dielectric material having a high permittivity are, in series, connected to each other. The capacitor is formed into a DRAM or an FRAM memory cell so as to realize a semiconductor memory revealing a high degree of integration and a high processing speed.

Capacitor for semiconductor integrated circuit and method of

Disclosed are a semiconductor device comprising a semiconductor substrate, a first metal connection layers, a first substrate oxide layer having a specific form, and a second connection pattern layer; a process for producing the device; and a microwave plasma treatment apparatus having gas feed ports in a specific position. The highly reliable semiconductor devices can be produced at a high rate at high yields.

Semiconductor device, process for the production thereof and apparatus

A dielectric isolated substrate wherein a connecting polycrystalline silicon layer has smooth and flat surface on which a single crystal support is bonded and has a densified crystal structure, or is obtained by further heat treatment at 800.degree. C. or higher after deposition, or has no orientation as to growth direction of polycrystalline silicon, or a buffering layer is formed between a polycrystalline silicon layer and a single crystal support, is excellent in bonding between the single crystal support and the polycrystalline silicon layer by preventing voids at the bonded surface, while enhancing reliability.

Dielectric isolated substrate and process for producing the same

A plasma processing apparatus performs a sample processing and cleaning processing. The sample processing is carried out by generating a reaction gas plasma within a vacuum vessel of the apparatus using an electron cyclotron resonance excitation. The cleaning processing is carried out to clean the inner wall of the vacuum vessel by generating a cleaning gas plasma within the vacuum vessel. Generation of the cleaning gas plasma takes place by using either one of the following processes:

Plasma processing apparatus and the method of the same

In a plasma processing apparatus using ECR, faces in contact with plasma excepting a substance to be processed are covered by an insulating material. By such configuration, discharge caused between the plasma and the substance to be processed in plasma processing is prevented beforehand.

Plasma processing method and apparatus using electron cyclotron resonance

A composite of metal and an organic film having a high adhesiveness without deterioration of film quality is provided by exposing the surface of organic film to at least one of chemically reactive gas phase molecules and gas phase ions thereby forming functional groups on the surface of organic film, and forming a metallic film thereon through the functional groups.

Metal-organic macromolecular synthetic resin composite and process for

The present invention relates to a plasma treatment apparatus for making plasma surface processing of a specimen such as thin-film formation, etching, sputtering or plasma oxidation by use of plasma produced through microwave discharge. In a specimen chamber provided with a specimen table for holding at least one specimen thereon, a microwave is introduced from a direction intersecting a magnetic line of force so as to propagate in the longitudinal direction of an ECR region or in a direction along the plane of the ECR region. Since the microwave is introduced from the transverse direction of the specimen chamber, the provision of a microwave introducing window at an upper portion of the specimen chamber is not required and hence a counter electrode for applying an electric field to the specimen can be disposed at the upper portion of the specimen chamber, thereby making it possible to apply a uniform electric field to the specimen so that the specimen is subjected to a uniform treatment.

Microwave-excited plasma processing apparatus

A semiconductor optical modulator is provided wherein very thin films of two kinds of semiconductors having different band gaps are laminated alternately to form a multi-quantum well (MQW) structure, also called a super-lattice structure, and current is injected into the MQW structure to change the corresponding optical absorption and refractive index characteristic thereof so that a sufficient on/off ratio can be obtained.

Semiconductor device for control of light

A laminar structure comprising an organic material and an inorganic material; for example, a coating structure on an organic substrate comprising an organic material on which an inorganic film must be formed and a method of producing the structure, a structure which is suitable for increasing the reliability of an optical disk and a method of producing this, a wiring structure on an organic substrate comprising the organic material on which electric wiring must be formed and a method of producing this, and a structure suitable for increasing the reliability of a semiconductor integrated circuit device and a method of producing this. In order to provide a laminar structure which exhibits a high degree of reliability with respect to prevention of cracks or separation and which comprises an organic material and an inorganic material and a method of producing this structure and a device which utilizes this structure, the present invention provides a laminar structure on an organic substrate comprising the organic substrate comprising an organic material and a thin film which is caused to adhere to the surface of the organic substrate and which comprises an inorganic material a second element which produces a metal bonding or covalent bonding with the first element that forms the thin film being contained in the organic substrate in the vicinity of the surface thereof.

Growing community of inventors

Hitachi, Japan

Michio Ohue