Fuji Electric Co., Ltd.

Fuji Electric Device Technology Co., Ltd.

Fuji Electric Holdings Co., Ltd.

Fuji Electric Systems Co. Ltd.

Michio Nemoto

Takashi Yoshimura

Tatsuya Naito

Manabu Takei

Hiroshi Takishita

Haruo Nakazawa

Takahiro Tamura

Tomoyuki Yamazaki

Misaki Meguro

Mitsuaki Kirisawa

Ryouichi Kawano

Misaki Uchida

Mituhiro Kakefu

Yuichi Onozawa

Motoyoshi Kubouchi

Masahito Otsuki

Yasunori Agata

Takeshi Fujii

Souichi Yoshida

Toru Ajiki

Tomonori Mizushima

Akira Nishiura

Kosuke Yoshida

Nao Suganuma

Ko Yoshikawa

Provided is a semiconductor device including a semiconductor substrate having an upper surface, a lower surface, and a center position equidistant from the upper surface and the lower surface in a depth direction of the semiconductor substrate. One or more N-type regions with an N-type conductivity are provided in the semiconductor substrate such that at least one N-type region among the one or more N-type regions includes the center position of the semiconductor substrate. An entire portion of the semiconductor substrate includes a bulk-acceptor having a bulk-acceptor concentration. A carrier concentration in all of the one or more N-type regions is higher than the bulk-acceptor concentration.

Semiconductor device and manufacturing method of semiconductor device

Provided is a semiconductor device, including a semiconductor substrate having an upper surface and a lower surface and including a bulk donor, wherein a hydrogen chemical concentration distribution of the semiconductor substrate in a depth direction is flat, monotonically increasing, or monotonically decreasing from the lower surface to the upper surface except for a portion where a local hydrogen concentration peak is provided; and a donor concentration of the semiconductor substrate is higher than a bulk donor concentration over an entire region from the upper surface to the lower surface. Hydrogen ions may be irradiated from the upper surface or the lower surface of the semiconductor substrate so as to penetrate the semiconductor substrate in the depth direction.

Provided is a semiconductor apparatus including: a first peak of a hydrogen chemical concentration disposed on the lower surface side of the semiconductor substrate; and a flat portion disposed on the upper surface side of the semiconductor substrate with respect to the first peak, containing a hydrogen donor, and having a substantially (almost) flat donor concentration distribution in a depth direction. An oxygen contribution ratio indicating a ratio of an oxygen chemical concentration contributing to generation of the hydrogen donor in the oxygen chemical concentration of the oxygen ranges from 1×10to 7×10. A concentration of the oxygen contributing to generation of the hydrogen donor in the flat portion is lower than the hydrogen chemical concentration. A hydrogen donor concentration in the flat portion ranges from 2×10/cmto 5×10/cm.

Semiconductor apparatus and manufacturing method of semiconductor apparatus

Provided is a semiconductor device, comprising: a semiconductor substrate having an upper surface, a lower surface, and a center position equidistant from the upper surface and the lower surface in a depth direction of the semiconductor substrate. An N-type region with an N-type conductivity is provided in the semiconductor substrate such that the N-type region includes the center position of the semiconductor substrate. The N-type region includes an acceptor with a concentration that is a lower concentration than a carrier concentration, and is 0.001 times or more of a carrier concentration at the center position of the semiconductor substrate.

There is provided a semiconductor device including: an anode electrode that is provided on a front surface side of a semiconductor substrate; a drift region of a first conductivity type that is provided in the semiconductor substrate; a first anode region of a first conductivity type that is in Schottky contact with the anode electrode; and a second anode region of a second conductivity type that is different from the first conductivity type, in which the first anode region has a doping concentration lower than or equal to a doping concentration of the second anode region, and is spaced from the drift region by the second anode region.

Semiconductor device and manufacturing method thereof

Provided is a semiconductor device including a semiconductor substrate having a drift region; a transistor portion having a collector region; a diode portion having a cathode region; and a boundary portion arranged between the transistor portion and the diode portion at an upper surface of the semiconductor substrate, and having the collector region, wherein the mesa portion of each of the transistor portion and the boundary portion has an emitter region and a base region, the base region has a channel portion, and a density in the upper surface of the mesa portion in the region in which the channel portion is projected onto the upper surface of the mesa portion of the boundary portion may be smaller than the density of the region in which the channel portion is projected onto the upper surface of the mesa portion of the transistor portion.

Semiconductor device

A semiconductor device includes a plurality of broad buffer layers provided in a drift layer. Each of the plurality of the broad buffer layers has an impurity concentration exceeding that of a portion of the drift layer excluding the broad buffer layers, and has a mountain-shaped impurity concentration distribution in which a local maximum value is less than the impurity concentration of an anode layer and a cathode layer. The plurality of broad buffer layers are disposed at different depths from a first main surface of the drift layer, respectively, the number of broad buffer layers close to the first main surface from the intermediate position of the drift layer is at least one, and number of broad buffer layers close to a second main surface of the drift layer from the intermediate position of the drift layer is at least two. The broad buffer layer includes a hydrogen-related donor.

Semiconductor device and method for manufacturing semiconductor device

A p anode layer is formed on one main surface of an ndrift layer. Ncathode layer having an impurity concentration more than that of the ndrift layer is formed on the other main surface. An anode electrode is formed on the surface of the p anode layer. A cathode electrode is formed on the surface of the ncathode layer. N-type broad buffer region having a net doping concentration more than the bulk impurity concentration of a wafer and less than the ncathode layer and p anode layer is formed in the ndrift layer. Resistivity &#x3c1;of the ndrift layer satisfies 0.12V&#x2264;&#x3c1;&#x2264;0.25Vwith respect to rated voltage V. Total amount of net doping concentration of the broad buffer region is equal to or more than 4.8&#xd7;10atoms/cmand equal to or less than 1.0&#xd7;10atoms/cm.

A semiconductor device is provided in which a semiconductor substrate can be prevented from being broken while elements can be prevented from being destroyed by a snap-back phenomenon. After an MOS gate structure is formed in a front surface of an FZ wafer, a rear surface of the FZ wafer is ground. Then, the ground surface is irradiated with protons and irradiated with two kinds of laser beams different in wavelength simultaneously to thereby form an Nfirst buffer layer and an N second buffer layer. Then, a P+ collector layer and a collector electrode are formed on the proton-irradiated surface. The distance from a position where the net doping concentration of the Nfirst buffer layer is locally maximized to the interface between the P+ collector layer and the N second buffer layer is set to be in a range of 5 &#x3bc;m to 30 &#x3bc;m, both inclusively.

Semiconductor device and method of producing the same

A p anode layer is formed on one main surface of an ndrift layer. Ncathode layer having an impurity concentration more than that of the ndrift layer is formed on the other main surface. An anode electrode is formed on the surface of the p anode layer. A cathode electrode is formed on the surface of the ncathode layer. N-type broad buffer region having a net doping concentration more than the bulk impurity concentration of a wafer and less than the ncathode layer and p anode layer is formed in the ndrift layer. Resistivity &#x3c1;of the ndrift layer satisfies 0.12V&#x2266;&#x3c1;&#x2266;0.25Vwith respect to rated voltage V. Total amount of net doping concentration of the broad buffer region is equal to or more than 4.8&#xd7;10atoms/cmand equal to or less than 1.0&#xd7;10atoms/cm.

A p anode layer () is formed on one main surface of an ndrift layer (). An ncathode layer () having an impurity concentration more than that of the ndrift layer () is formed on the other main surface of the ndrift layer (). An anode electrode () is formed on the surface of the p anode layer (). A cathode electrode () is formed on the surface of the ncathode layer (). An n-type broad buffer region () that has a net doping concentration more than the bulk impurity concentration of a wafer and less than that of the ncathode layer () and the p anode layer () is formed in the ndrift layer (). The resistivity &#x3c1;of the ndrift layer () satisfies 0.12V&#x2266;&#x3c1;&#x2266;0.25Vwith respect to a rated voltage V. The total amount of the net doping concentration of the broad buffer region () is equal to or more than 4.8&#xd7;10atoms/cmand equal to or less than 1.0&#xd7;10atoms/cm.

A TMBS diode is disclosed. In an active portion and voltage withstanding structure portion of the diode, an end portion trench surrounds active portion trenches. An active end portion which is an outer circumferential side end portion of an anode electrode is in contact with conductive polysilicon inside the end portion trench. A guard trench is separated from the end portion trench and surrounds it. A field plate provided on an outer circumferential portion of the anode electrode is separated from the anode electrode, and contacts both part of a surface of n-type drift layer in a mesa region between the end portion trench and the guard trench and the conductive polysilicon formed inside the guard trench. The semiconductor device has high withstand voltage without injection of minority carriers, and relaxed electric field intensity of the trench formed in an end portion of an active portion.

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Nagano, Japan

Michio Nemoto