The Furukawa Electric Co., Ltd.

Other

Central Glass Company, Limited

Mitsubishi Heavy Industries Limited

National Institute of Advanced Industrial Science and Technology

Agency of Industrial Science and Technology

Agency of Industrial Science

Michio Kondo

Akihisa Matsuda

Hisashi Koaizawa

Kenkichi Suzuki

Toshihiro Nakamura

Nobuaki Orita

Hiroshi Kuraseko

Yoshihiko Chida

Norikazu Ito

Tsuneo Suzuki

Yoshiaki Takeuchi

Yoshiyuki Nasuno

Shinya Nakano

Yoshimi Watabe

Takeshi Hirayama

Takuya Matsui

Kiyoshi Yase

Kenji Wada

A process for producing a photovoltaic device that can improve the power generation characteristics of a solar cell having a heterojunction composed of a p-type crystalline Ge (substrate), an i-type amorphous silicon semiconductor layer, and an n-type amorphous silicon semiconductor layer. A process for producing a photovoltaic device () comprising a heterojunction cell () prepared by sequentially stacking an i-type amorphous silicon semiconductor layer () and an n-type amorphous silicon semiconductor layer () on top of a substrate (p-type crystalline Ge ()), the process comprising a PHexposure treatment stage of adjusting the temperature of the substrate (), from which a surface oxide film has been removed, to a prescribed temperature, and subsequently placing the substrate in a vacuum chamber and exposing the substrate to PH, an i-layer deposition stage of depositing the i-type amorphous silicon semiconductor layer () on the PH-exposed substrate, an n-layer deposition stage of depositing the n-type amorphous silicon semiconductor layer () on the i-type amorphous silicon semiconductor layer (), and an electrode formation stage of forming electrodes () on the surface of the n-type amorphous silicon semiconductor layer, and on the back surface of the substrate ().

Process for producing photovoltaic device

The linear semiconductor substrateorof the present invention comprises at least one desired thin filmformed on a linear substratehaving a length ten or more times greater than a width, thickness, or diameter of the linear substrate itself. Adopting semiconductor as the thin filmforms a linear semiconductor thin film. The linear semiconductor substrateorof the present invention is produced by utilizing a fiber-drawing technique which is a fabricating technique of optical fibers.

Linear semiconductor substrate, and device, device array and module, using the same

A display device includes a first fiber having a silicon layer or an oxide layer, on which an active element is formed on the surface of the fiber and a second fiber forming a combined one-dimensional substrate together with the first fiber by being combined with the first fiber and having light emitting layers formed on a plurality of domains of the device. The first fiber and the second fiber are respectively drawn out from take-up jigs, are cut in necessary lengths and separated into plural fibers, and these plural first or second fibers are mounted in parallel with each other on a fixing jig. In this state, at least one-side elements of active elements and passive elements are formed on the first or second fibers.

Semiconductor device and display device using a one-dimensional substrate and device fabricating method thereof

A solar cell substrate has irregularities on a surface which is in contact with a photo-electric conversion layer, and light is incident on the side of the irregularities. The height of the irregularities is set so that the root mean square height is in a range of 15 nm to 600 nm, and tan &thgr; is in a range of 0.10 to 0.30, where &thgr; is the angle of incline of the surface of the irregularities with respect to an average line of the irregularities. Light incident on the irregularities is scattered at the interface. This increases the optical path length and thus the quantity of light absorbed in the photo-electric conversion layer, resulting in improved efficiency. Additionally, the photo-electric conversion layer can be made thinner reducing deposit time and manufacturing cost. Further, collision of crystals is not incurred, thus preventing deterioration of photo-electric conversion efficiency which is caused by defects.

Solar cell substrate, thin-film solar cell, and multi-junction thin-film solar cell

A thin film forming method and apparatus forms a thin film having an excellent thickness uniformity over a substrate, particularly a large-area substrate. The thin film forming method and apparatus includes a film forming chamber in which an inductive coupling electrode having a feeding portion and a grounding portion at its two ends is arranged, a high-frequency power source for feeding a high-frequency power to the feeding portion, and a waveform generator for amplitude-modulating the high-frequency power outputted from the high-frequency power source. The amplitude-modulated high-frequency power is fed to the inductive coupling electrode to generate a plasma so that a thin film may be formed on a substrate arranged to face the inductive coupling electrode.

Thin film formation by inductively-coupled plasma CVD process

The disclosure relates to an amorphous silicon thin film transistor. The transistor includes a substrate, a gate electrode formed on the substrate, an insulating film formed on the substrate, a hydrogenated amorphous silicon film formed on the insulating film, a non-doped microcrystal silicon film formed on the amorphous silicon film; and source and drain electrodes which are formed on the microcrystal silicon film. In the transistor, there is provided an ohmic contact between the source and drain electrodes through the microcrystal silicon film. The insulating film optionally has an etched surface layer prepared by etching the insulating film which has been formed on the substrate, with an aqueous solution containing HF. The TFT can be produced in a simple manner with safety and with a simple equipment.

Amorphous silicon thin film transistor and method of preparing same

The disclosure relates to a microcrystal silicon thin film transistor; The transistor includes a substrate, a gate electrode formed on the substrate, an insulating film formed on the substrate, a non-doped microcrystal silicon film formed on the insulating film, and source and drain electrodes which are formed on the microcrystal film. In the transistor, there is provided an ohmic contact between the source and drain electrodes through the microcrystal silicon film. The insulating film optionally has an etched surface layer prepared by etching the insulating film which has been formed on the substrate, with an aqueous solution containing HF. The TFT can be produced in a simple manner with safety and with a simple equipment.

Microcrystal silicon thin film transistor

Growing community of inventors

Tsukuba, Japan

Michio Kondo