Murata Manufacturing Co., Ltd.

Skyworks Solutions, Inc.

Other

Tohoku University

Michio Kadota

Takeshi Nakao

Hideya Horiuchi

Junya Ago

Toshimaro Yoneda

Tetsuya Kimura

Koji Fujimoto

Kenji Nishiyama

Shuji Tanaka

Kazuhiko Morozumi

Mamoru Ikeura

Hajime Kando

Masakazu Mimura

Eiichi Takata

Kenjiro Okaguchi

Takuo Hada

Yasuji Yamamoto

Naoki Mizoguchi

Yasuharu Nakai

Yasushi Nanishi

Yoshihiro Koshido

Yasuhiro Kuratani

Takao Mukai

Shunsuke Kido

Haruo Morii

Makoto Tose

Yoshihiro Ito

Makoto Kumatoriya

Osamu Nakagawara

Masatoshi Nakagawa

Yasuhiro Negoro

Seigo Hayashi

Takashi Ogami

Daisuke Yamamoto

Mari Yaoi

Tomoharu Sato

Toshinori Miura

Yoshimi Ishii

Yasunori Takakuwa

Kenya Hashimoto

Hiroyuki Nakamura

Yusuke Suzuki

Takashi Fujii

Norio Taniguchi

Kikuo Wakino

Takaaki Asada

Hajime Yamada

Kansho Yamamoto

Hiroshi Kawai

Tsuyoshi Iwamoto

Hideaki Kobayashi

Seiichi Arai

Naoko Aizawa

Toru Yabe

Akiteru Takatsuka

Yoshiharu Yoshii

Tomohisa Komura

Hiromichi Yamada

Hikari Tochishita

Kenji Suzuki

Ivoyl P Koutsaroff

Kunio Minami

Shigeo Ito

Jun Nakanishi

Harou Morii

Takeshi Nadota

Takashi Nakao

Genji Inuidani

Hajime Kandou

Yoshinori Miura

Kazunori Shimoda

Ken Funato

Kenji Nishimaya

An acoustic wave device that can achieve a good characteristic in a superhigh frequency band of 6 GHz or higher by using an overtone. The device includes: a piezoelectric substrate; an electrode provided in such a way as to be in contact with the piezoelectric substrate; and an acoustic multilayer film provided in such a way as to be in contact with the piezoelectric substrate and/or the electrode and is configured to use an overtone of resonance characteristics of a surface acoustic wave. The electrode includes an interdigital transducer provided on one of surfaces of the piezoelectric substrate. The surface acoustic wave that is the overtone preferably has a velocity of 9000 m/s or higher. The acoustic multilayer film is preferably composed of an acoustic low impedance film and an acoustic high impedance film which are alternately stacked.

Acoustic wave device

An acoustic wave device includes a support substrate, a piezoelectric body including LiTaO, a first electrode on a first main surface of the piezoelectric body, a second electrode on a second main surface, an acoustic-layer laminated body between a support substrate and the piezoelectric body. The azimuth angle of the piezoelectric body is (about 85° to 95°, about 85° to 95°, about 5° to 65°) represented in Euler angles.

An acoustic wave device includes a support substrate, a piezoelectric body, an acoustic layer laminate, first and second electrodes, and a lead-out electrode. The first electrode is on a first main surface of the piezoelectric body, the second electrode is on a second main surface of the piezoelectric body, the lead-out electrode is on the first main surface or the second main surface of the piezoelectric body, the lead-out electrode is electrically connected to the first electrode or the second electrode, side surface grooves extend from the first main surface side of the piezoelectric body, and the side surface grooves are provided in at least a portion of a remaining portion excluding a portion provided with the lead-out electrode from a region in an outer side portion of at least one of the first electrode and the second electrode.

Acoustic wave devices and related methods are disclosed. In some embodiments, an acoustic wave device can include a quartz substrate having a first surface, and a piezoelectric plate formed from LiTaO3 or LiNbO3 and having a first surface configured to support a surface acoustic wave and a second surface in engagement with the first surface of the quartz substrate. The second surface of the piezoelectric plate is a minus surface resulting from crystal structure orientation of the piezoelectric plate. The acoustic wave device can further include an interdigital transducer electrode formed on the first surface of the piezoelectric plate and configured to provide transducer functionality associated with the surface acoustic wave.

Acoustic wave devices

Methods and assemblies related to fabrication of acoustic wave devices. In some embodiments, a method for fabricating an acoustic wave device can include attaching a first surface of a piezoelectric layer, such as a LiTaOor LiNbOlayer, to a handling substrate, and performing a thinning operation on the piezoelectric layer to expose a second surface of a reduced-thickness piezoelectric layer attached to the handling substrate. The method can further include bonding the second surface of the reduced-thickness piezoelectric layer to a first surface of a permanent substrate, and removing the handling substrate from the reduced-thickness piezoelectric layer. The handling substrate can be, for example, a silicon substrate, and the permanent substrate can be, for example, a quartz substrate.

Methods and assemblies related to fabrication of acoustic wave devices

An acoustic wave device that has a better TCF and can improve a resonator Q or impedance ratio is provided. The acoustic wave device includes a substratecontaining 70 mass % or greater of silicon dioxide (SiO), a piezoelectric thin filmincluding LiTaOcrystal or LiNbOcrystal and disposed on the substrate, and an interdigital transducer electrodedisposed in contact with the piezoelectric thin film

Surface acoustic wave devices and related methods. In some embodiments, a surface acoustic wave device for providing resonance of a surface acoustic wave having a wavelength λ can include a quartz substrate and a piezoelectric plate formed from LiTaOor LiNbOdisposed over the quartz substrate. The piezoelectric plate can have a thickness greater than 2λ. The surface acoustic wave device can further include an interdigital transducer electrode formed over the piezoelectric plate. The interdigital transducer electrode can have a mass density ρ in a range 1.50 g/cm<ρ≤6.00 g/cm, 6.00 g/cm<ρ≤12.0 g/cm, or 12.0 g/cm<ρ≤23.0 g/cm, and a thickness greater than 0.148λ, greater than 0.079λ, or greater than 0.036λ, respectively.

Surface acoustic wave devices and related methods

Surface acoustic wave device having mass-loaded electrode. In some embodiments, a surface acoustic wave device for providing resonance of a surface acoustic wave having a wavelength &#x3bb; can include a quartz substrate and a piezoelectric plate formed from LiTaOor LiNbOdisposed over the quartz substrate. The piezoelectric plate can have a thickness greater than 2&#x3bb;. The surface acoustic wave device can further include an interdigital transducer electrode formed over the piezoelectric plate. The interdigital transducer electrode can have a mass density &#x3c1; in a range 1.50 g/cm&#x3c;&#x3c1;&#x2264;6.00 g/cm, 6.00 g/cm&#x3c;&#x3c1;&#x2264;12.0 g/cm, or 12.0 g/cm&#x3c;&#x3c1;&#x2264;23.0 g/cm, and a thickness greater than 0.148&#x3bb;, greater than 0.079&#x3bb;, or greater than 0.036&#x3bb;, respectively.

Surface acoustic wave device having mass-loaded electrode

An elastic wave device includes a first IDT electrode on a first main surface of a LiNbOsubstrate, and a second IDT electrode on a second main surface thereof. The application of alternating voltages with reversed phases to each other to the first and second IDT electrodes excites plate waves in which SH waves in a high order mode predominate. The elastic wave device uses the plate waves in the high order mode in which the SH waves predominate.

Elastic wave device

An elastic wave device includes an IDT electrode disposed on a LiNbOsubstrate and an aluminum nitride film or a silicon nitride film is stacked to cover the IDT electrode and utilizes a leaky elastic wave. The IDT electrode includes a metal selected from a group consisting of Cu, Al, Au, Pt, and Ni. Euler angles of the LiNbOare (0&#xb0;&#xb1;5&#xb0;, &#x3b8;, 0&#xb0;&#xb1;5&#xb0;), and when X denotes a wavelength-normalized thickness of the IDT electrode and Y denotes &#x3b8; of the Euler angles, Y is set in a specific range depending on the range of the wavelength-normalized thickness of the IDT electrode, the range of the wavelength-normalized thickness of the aluminum nitride film or the silicon nitride film, and the kind of metal of which the IDT electrode is composed.

An elastic wave device includes a piezoelectric substrate and an interdigital transducer electrode disposed in a piezoelectric vibrating portion of the piezoelectric substrate to pass through the piezoelectric substrate.

A tunable filter is a ladder circuit tunable filter including serial arm resonators and a parallel arm resonator. The serial arm resonators and the parallel arm resonator include elastic wave resonators. Variable capacitors are connected in series to the serial arm resonators, a variable capacitor is connected in parallel to the parallel arm resonator, and first inductors are connected in series to the serial arm resonators. When an impedance at a resonant frequency of the serial arm resonators is Zrs and an impedance at a resonant frequency of the parallel arm resonator is Zrp, a ratio Zrs/Zrp is not greater than 1.

Tunable filter

An elastic wave device making use of an SH plate wave propagating in LiNbOsubstrates includes a LiNbOsubstrate, IDT electrodes located on at least one surface of the LiNbOsubstrate, and a support which is bonded to the LiNbOsubstrate such that the support is located outside a region provided with the IDT electrodes and supports the LiNbOsubstrate, wherein &#x3b8; of the Euler angles (0&#xb0;, &#x3b8;, 0&#xb0;) of the LiNbOsubstrate ranges from about 92&#xb0; to about 138&#xb0; and the thickness of the LiNbOsubstrate ranges from about 0.05&#x3bb; to about 0.25&#x3bb;, where &#x3bb; is the wavelength determined by the pitch between electrode fingers of the IDT electrodes.

A piezoelectric bulk-wave resonator has a single-crystal LiNbOsubstrate whose Euler Angles are in the ranges of about (78&#xb0; to 106&#xb0;, 78&#xb0; to 104&#xb0;, 18&#xb0; to 53&#xb0;), a first driver electrode on a first main surface of the single-crystal LiNbOsubstrate, and a second driver electrode on a second main surface. The first driver electrode and the second driver electrode overlap with the single-crystal LiNbOsubstrate therebetween. The piezoelectric bulk-wave resonator uses the thickness-shear mode.

Piezoelectric bulk-wave resonator

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Kyoto, Japan

Michio Kadota