Ulvac, Inc.

Philtech Inc.

Michio Ishikawa

Masanobu Hatanaka

Fumio Nakamura

Kanako Tsumagari

Yasushi Higuchi

Se-Ju Lim

Yuji Furumura

Koukou Suu

Naomi Mura

Toshio Hayashi

Harunori Ushikawa

Takumi Kadota

Masahisa Ueda

Chihiro Hasegawa

Hiroaki Inoue

Toshiya Yogo

Hideaki Zama

Yoshikazu Takahashi

Osamu Irino

Takashi Kurimoto

Naoki Hanada

Toshimitsu Uehigashi

Yasuhiro Morikawa

A radical etching apparatus comprising a vacuum chamber for a substrate to be treated; a pipe pathway, connected to the vacuum chamber, a zone for generating plasma and a gas introduction device through which Nand at least one of Hand NHcan be introduced; a microwave applying microwaves to the interior of the pipe pathway; a gas introducer as a source of supply for F, between the vacuum chamber and the zone; and a shower plate. A method comprises introducing Nand at least one of Hand NHinto a pipe pathway and applying microwaves. The gas mixture is decomposed by the plasma forming decomposition products as active species which react with F during transportation to the vacuum chamber to make radicals. An SiOlayer on the substrate etched in the vacuum chamber, by irradiating the substrate with the radicals through the shower plate.

Radical etching apparatus and method

Disclosed is an ashing apparatus and its method of manufacture wherein decrease in processing efficiency is suppressed. Specifically, a shower plate is arranged to face a substrate stage on which a substrate is placed, and diffuses oxygen radicals supplied into a chamber. A metal blocking plate is arranged between the shower plate and the substrate stage and has a through hole through which oxygen radicals pass. In addition, the metal blocking plate has a first layer, which is made of a metal same as the one exposed in the substrate, on the surface facing the substrate.

Ashing apparatus

A method for the formation of an Ni film is herein disclosed, which comprises the steps of maintaining the temperature of an Si substrate at a desired level in a vacuum chamber; introducing, into the vacuum chamber, a nickel alkylamidinate (in this organometal compound, the alkyl group is a member selected from the group consisting of a methyl group, an ethyl group, a butyl group and a propyl group), Hgas and NHgas; and then forming an Ni film according to the CVD technique, wherein the film-forming temperature is set at a level between higher than 280&#xb0; C. and not higher than 350&#xb0; C.

Method for forming Ni film

In a film-forming apparatus in which two or more gases are used, a uniform film is formed. In a film-forming apparatus provided with a film-forming chamber and a shower head, the shower head is provided with a material gas diffusion chamber and a reactive gas diffusion chamber. A gas passage which communicates the material gas diffusion chamber and a material gas introduction pipe is constituted into multi-stages of one stage or more. Each stage has a gas passage represented by 2(where n is the number of stages). The first-stage gas passage has connected to the center thereof the material gas introduction pipe. Each of second-stage and subsequent-stage gas passages has connected to the center thereof connection holes which are provided on both ends of the previous-stage gas passages so as to be in communication with the previous-stage gas passages. Each of the final-stage gas passages is connected to the material gas diffusion chamber by connection holes formed on both ends of each of the gas passages.

Film-forming apparatus

A method for manufacturing a semiconductor device that improves the reliability of a metal cap layer and productivity. The method includes an insulation layer step of superimposing an insulation layer() on a semiconductor substrate () including an element region (), a recess step of forming a recess () in the insulation layer (), a metal layer step of embedding a metal layer () in the recess (), a planarization step of planarizing a surface of the insulation layer () and a surface of the metal layer () to be substantially flush with each other, and a metal cap layer step of forming a metal cap layer () containing at least zirconium element and nitrogen element on the surface of the insulation layer () and the surface of the metal layer () after the planarization step.

Semiconductor device manufacturing method and semiconductor device manufacturing apparatus

The object of this invention is to provide a method for producing a component for vacuum apparatus and a resin coating forming apparatus capable of easily forming a resin coating on an internal flow path complex in shape. The resin coating forming apparatus () comprises a monomer vapor supplying unit (), a vacuum pumping line () for transporting monomer vapor, a connection portion () connectable with the internal flow path of a component (A) provided on part of the vacuum pumping line (), and a temperature adjusting unit () for depositing the monomer vapor onto the internal flow path of the component (A) connected with the connection portion () to form a resin coating. The above arrangement permits the formation of a uniform, high-coverage resin coating on the internal flow path of the component (A) by merely exposing the internal flow path to monomer vapor.

Method for producing component for vacuum apparatus, resin coating forming apparatus and vacuum film forming system

Disclosed is a method for manufacturing a semiconductor device which is decreased in resistance of a copper wiring containing a ruthenium-containing film and a copper-containing film, thereby having improved reliability. Also disclosed is an apparatus for manufacturing a semiconductor device. Specifically, an Ru film is formed on a substrate having a recessed portion by a CVD method using a raw material containing an organic ruthenium complex represented by the general formula and a reducing gas (step S). Then, a Cu film is formed on the Ru film by a CVD method using a raw material containing an organic copper complex represented by the general formula and a reducing gas, thereby forming a copper wiring containing the Ru film and the Cu film in the recessed portion (step S).

Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device comprises dry-etching a thin film using a resist mask carrying patterns in which at least one of the width of each pattern and the space between neighboring two patterns ranges from 32 to 130 nm using a halogenated carbon-containing compound gas with the halogen being at least two members selected from the group consisting of F, I and Br. The ratio of at least one of I and Br is not more than 26% of the total amount of the halogen atoms as expressed in terms of the atomic compositional ratio to transfer the patterns onto the thin film. Such etching of a thin film avoids causing damage to the resist mask used. The resulting thin film carrying the transferred patterns is used as a mask for subjecting the underlying material to dry-etching.

Semiconductor device and etching apparatus

A barrier film made of a ZrBfilm is formed by use of a coating apparatus provided with plasma generation means including a coaxial resonant cavity and a microwave supply circuit for exciting the coaxial resonant cavity, the coaxial resonant cavity including spaced apart conductors provided around the periphery of a nonmetallic pipe for reactive gas introduction, the coaxial resonant cavity having an inner height equal to an integer multiple of one-half of the exciting wavelength, the plasma generation means being constructed such that a gas injected from one end of the nonmetallic pipe is excited into a plasma state by a microwave when the gas is in a region of the nonmetallic pipe which is not covered with the conductors and such that the gas in the plasma state is discharged from the other end of the nonmetallic pipe.

Method of forming barrier film

A method for manufacturing a semiconductor device that improves the reliability of a metal cap layer and productivity. The method includes an insulation layer step of superimposing an insulation layer () on a semiconductor substrate () including an element region (), a recess step of forming a recess () in the insulation layer (), a metal layer step of embedding a metal layer () in the recess (), a planarization step of planarizing a surface of the insulation layer () and a surface of the metal layer () to be substantially flush with each other, and a metal cap layer step of forming a metal cap layer () containing at least zirconium element and nitrogen element on the surface of the insulation layer () and the surface of the metal layer () after the planarization step.

A vacuum film-forming apparatus comprising substrate stages; vacuum chamber-forming containers opposed to the stages; a means for moving the substrate between the stages; and gas-introduction means connected to every containers, wherein one of the stage and the container is ascended or descended towards the other to bring the upper face of the stage and the opening of the container into contact with one another so that vacuum chambers can be formed and that a raw gas and/or a reactant gas can be introduced into each space of the chamber through each gas-introduction means to carry out either the adsorption or reaction step for allowing the raw gas to react with the reactant gas. The apparatus permits the independent establishment of process conditions for the adsorption and reaction processes and the better acceleration of the reaction between raw and reactant gases to give a film having excellent quality and the apparatus can be manufactured at a low cost.

Growing community of inventors

Susono, Japan

Michio Ishikawa