Fujitsu Corporation

Kyushu Fujitsu Electronics Limited

Michio Hayakawa

Toshio Hamano

Hideharu Sakoda

Yoshihiro Kubota

Kazuto Tsuji

Yoshiyuki Yoneda

Michio Sono

Ichiro Yamaguchi

Yoshihiko Ikemoto

Yukio Saigo

Naomi Miyaji

Hiroshi Inoue

Mitsutaka Sato

Ryuji Nomoto

Akira Okada

Fumihiko Taniguchi

Seiichi Orimo

Yoshitsugu Katoh

Mitsuo Abe

A fingerprint sensor apparatus can provide a normal fingerprint sensor function even when a mold flash is formed. The fingerprint sensor apparatus recognizes a pattern of a fingerprint by being contacted by a finger. A semiconductor chip has a surface on which a sensor part is formed. The semiconductor chip is encapsulated by a seal resin. The sensor part is exposed in a bottom of an opening formed in the seal resin part. A distance between an edge of the bottom of the opening and an edge of the sensor part is 0.3 mm to 0.1 mm.

Fingerprint sensor apparatus and manufacturing method thereof

A semiconductor device and a method of producing the semiconductor device are provided. This semiconductor device includes a semiconductor chip, a printed wiring board, a heat spreader, a sealing resin, and solder balls. The printed wiring board is provided with the solder balls on an outer portion and a wiring layer on an inner portion. Wires are bonded to the wiring layer, and an opening is formed in the center of the printed wiring board. The heat spreader is bonded to the printed wiring board, with the semiconductor chip being thermally connected to the stage portion of the heat spreader. The sealing resin is made up of a first sealing resin portion and a second sealing resin portion. The first and second sealing resin portions sandwich the heat spreader.

Semiconductor device and method of producing the same

A process for manufacturing semiconductor device having a package in which a semiconductor device is sealed includes a base, and a metallic film is formed on a surface of the base. The semiconductor chip is formed on the metallic film. A pad formed on the semiconductor chip is connected to the metallic film by a wire. A sealing layer is formed on the metallic film. Leads are formed on the glass layer. A connecting layer is formed on the metallic film and contains electrically conductive particles. The connecting layer is in contact with a lead for a power supply system and connecting the metallic film to the lead.

Process for manufacturing a packaged semiconductor having a divided

A semiconductor device having a package in which a semiconductor device is sealed includes a base, and a metallic film is formed on a surface of the base. The semiconductor chip is formed on the metallic film. A pad formed on the semiconductor chip is connected to the metallic film by a wire. A sealing layer is formed on the metallic film. Leads are formed on the glass layer. A connecting layer is formed on the metallic film and contains electrically conductive particles. The connecting layer is in contact with a lead for a power supply system and connecting the metallic film to the lead.

Semiconductor device and lead frame therefore

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Kawasaki, Japan

Michio Hayakawa