Sony Corporation

Fujifilm Corporation

Michio Arai

Toyoharu Oohata

Eriko Matsui

Kenji Shinozaki

Yusuke Fujii

Takeshi Miyato

Kenji Shirokane

Kenichi Takahashi

Hiroshi Matsuyama

Jiro Kasahara

Toshiharu Suzuki

Kazuo Nishiyama

Shun Inoue

Tetsunosuke Yanada

Provided is an optical laminate with excellent durability and an image display device formed of the optical laminate. The optical laminate includes a pressure sensitive adhesive layer, a specific laminate including a resin layer and a light absorption anisotropic layer which are adjacent to each other, and a pressure sensitive adhesive layerin order, in which the light absorption anisotropic layer contains a dichroic substance, the pressure sensitive adhesive layeris adjacent to the resin layer of the specific laminate, and a storage elastic modulus Ep of the pressure sensitive adhesive layerand a storage elastic modulus Ea and a moist heat strain δa of the resin layer satisfy Expression (1-1) ¼ (3×Ep/Ea)>δa.

Optical laminate and image display device

Provided is an image recording method including applying a pretreatment liquid containing water and a resin X and an ink containing water and a colorant onto a resin base material A which has a specific distortion rate and to which a tension is applied, to obtain an image, heating the image to a temperature Tand drying the image, and cooling the image to a temperature T, in which σcalculated by Equation (1) is 40 kgf/cmor less. E(T) represents an elastic modulus of the resin X at the temperature T, ε(T) represents an expansion coefficient of the resin base material A under specific conditions, E(T) represents an elastic modulus of the resin X at a temperature T of the image in the cooling, α(T) represents a linear expansion coefficient of the resin X at the temperature T, and α(T) represents a linear expansion coefficient of the resin base material A under specific conditions.

Image recording method

Provided is an image recording method including applying an ink containing water, a resin X, and a colorant onto a resin base material A which has a specific distortion rate and to which a tension is applied, to obtain an image, heating the image to a temperature Td and drying the image, and cooling the image to a temperature Tr, in which &#x3c3;calculated by Equation (1) is 40 kgf/cmor less. E(T) represents an elastic modulus of the resin X at the temperature T, &#x3b5;(T) represents an expansion coefficient of the resin base material A under specific conditions, E(T) represents an elastic modulus of the resin X at a temperature T of the image in the cooling, &#x3b1;(T) represents a linear expansion coefficient of the resin X at the temperature T, and &#x3b1;(T) represents a linear expansion coefficient of the resin base material A under specific conditions.&#x3c3;=|&#x3c3;+&#x3c3;|&#x2003;&#x2003;Equation (1)&#x3c3;()&#x3b5;()&#x2003;&#x2003;Equation (2)&#x3c3;=&#x222b;()(&#x3b1;()&#x2212;&#x3b1;())&#x2003;&#x2003;Equation (3)

A display apparatus is capable of performing a gradation display and a high-speed low-power-consumption display by controlling the colored state of each pixel to an appropriate state. A driving method for the display apparatus displays images through deposition and dissolution of a metal by impressing a predetermined voltage on each pixel. A voltage pulse or AC voltage having an amplitude of not more than a threshold for deposition of the metal is impressed, and a writing pulse or an erasing pulse is controlled according to the resultant current. Alternatively, an additional writing pulse is impressed when the current is lowered to or below a predetermined value, after the writing. Further, the state of the pixel is detected through the current, and a rewriting operation is selected according to the detected state.

Driving method for display apparatus

The invention provides an electrochromic display unit with high-quality display. The display unit comprises a transparent electrode (), a display layer () which is formed on the transparent electrode () and which changes a color according to the amount of accumulated electrical charges, and an ion conductive layer () formed on the display layer (). A plurality of picture electrodes () are formed on the ion conductive layer () on the side opposite to the display layer (). The picture electrodes () are driven independently by, for example, a corresponding thin film transistors (). In driving, by applying a drive current having given amount of electrical charges and then applying a certain amount of an inverted current, a certain amount of coloration is deducted, and extra coloration of the display layer () is eliminated.

Display unit and its driving method

Display unit and driving method therefor

An annealing method for heating a sample by applying radiation of light beams thereto, arranged so that the radiant power of the light beams is sampled or monitored by a light detector (a light detector 12, for example, formed of a phototransistor, photodiode, and the like) and the radiant power of the light beams is controlled through a feedback with the data derived from the monitoring used as the feedback control signal so that the heating temperature of the sample is stabilized. The annealing can be performed with excellent reproducibility from sample to sample.

Annealing method by irradiation of light beams

A process of manufacturing a semiconductor device having the steps of implanting impurity ions to a surface of a semiconductor substrate; and radiating the substrate with incoherent light of which scope is wider than said substrate whereby the implanted region is electrically activated.

Method of activating implanted ions by incoherent light beam

A semiconductor device includes a first semiconductive region of a first conductivity type, a second semiconductive region of a second conductivity type adjacent to the first semiconductive region, and a third semiconductive region of the first conductivity type adjacent to the second semiconductive region. In the semiconductor device, the distance between the first semiconductive region and the third semiconductive region is smaller than the diffusion length of the minority carriers existing in the second semiconductive region. Thus, a photocurrent flowing through the second and third semiconductive regions is amplified by h.sub.FE times as much as the current of carriers of the conventional photo-diodes.

Light responsive field effect transistor having a pair of gate regions

A switching circuit using a field effect transistor having a semiconductive substrate with a current path portion, first and second semiconductive regions forming a PN junction therebetween, the first region being capacitively coupled to the current path portion, and a control electrode connected to the second region. The switching circuit is operated with a signal applied to the control electrode.

Controlled fading switching circuit

An analog memory circuit using a field effect transistor having a semiconductive substrate, first and second semiconductive regions forming a PN junction therebetween, the first region being capacitively coupled to the current path portion to form a capacitor, and a control electrode connected to the second region. The analog memory circuit stores a signal in the capacitor between the first region and the current path portion.

Analog memory circuit utilizing a field effect transistor for signal

A peak level indicator using a field effect transistor having a semiconductive substrate with a current path portion, first and second semiconductive regions forming a PN junction therebetween, the first region being capacitively coupled to the current path portion to form a capacitor, and a rectified input signal being applied to the second region. The peak level indicator is provided with a level meter indicating a current through the current path portion.

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Kanagawa, Japan

Michio Arai