Sony Corporation

Sony Group Corporation

Michinori Shiomi

Masayuki Tanaka

Katsunori Yanashima

Akira Ohmae

Tomonori Hino

Takao Miyajima

Takaaki Ami

Shigetaka Tomiya

Takeru Bessho

Noriyuki Futagawa

Izuho Hatada

Syuuiti Takizawa

Yuuji Hiramatsu

Junichi Sato

Kazushi Nakano

Masashi Bando

Toshio Fujino

Takahiko Kawasaki

Hidekazu Aoyagi

Hideki Ono

Hiroshi Nakajima

Hironobu Narui

Nobukata Okano

Daisuke Hobara

Katsutoshi Itou

Yukihisa Hitsuda

Yosuke Saito

Yoshiaki Obana

Nobuhiro Suzuki

Takahiro Koyama

Yuki Maeda

Mikihiro Yokozeki

Tomomasa Watanabe

Kota Tokuda

Makoto Nakashima

Takashi Tange

Masayuki Arimochi

Atsushi Yasuda

Nobutaka Okano

Daiji Kasahara

To provide a semiconductor film capable of realizing further enhancement of photoelectric conversion efficiency. The semiconductor film includes semiconductor nanoparticles and a compound represented by the following general formula (1), in which the compound represented by the general formula (1) is coordinated to the semiconductor nanoparticles. (In the general formula (1), X represents —SH, —COOH, —NH, —PO(OH), or —SO(OH), Arepresents —S, —COO, —PO(OH)O, or —SO(O), and n is an integer of 1 to 3. Brepresents Li, Na, or K.)

Semiconductor film and method of producing the same, photoelectric conversion element, solid-state imaging element and electronic apparatus

A photoelectric conversion element includes a first electrode including a plurality of electrodes independent from each other, a second electrode disposed to be opposed to the first electrode, an n-type photoelectric conversion layer including a semiconductor nanoparticle, and a semiconductor layer including an oxide semiconductor material. The semiconductor layer is provided between the first electrode and the n-type photoelectric conversion layer. The n-type photoelectric conversion layer is provided between the first electrode and the second electrode. A carrier density of the n-type photoelectric conversion layer is higher than a carrier density of the semiconductor layer.

Photoelectric conversion element and imaging device

To provide a semiconductor film capable of realizing further enhancement of photoelectric conversion efficiency. The semiconductor film includes semiconductor nanoparticles and a compound represented by the following general formula (1), in which the compound represented by the general formula (1) is coordinated to the semiconductor nanoparticles. (In the general formula (1), X represents &#x2014;SH, &#x2014;COOH, &#x2014;NH, &#x2014;PO(OH), or &#x2014;SO(OH), Arepresents &#x2014;S, &#x2014;COO, &#x2014;PO(OH)O, or &#x2014;SO(O), and n is an integer of 1 to 3. Brepresents Li, Na, or K.)

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode including a plurality of electrodes independent from each other; a second electrode disposed to be opposed to the first electrode; an n-type photoelectric conversion layer including a semiconductor nanoparticle, the n-type photoelectric conversion layer being provided between the first electrode and the second electrode; and a semiconductor layer including an oxide semiconductor material, the semiconductor layer being provided between the first electrode and the n-type photoelectric conversion layer.

A photoelectric conversion device of an embodiment of the technology includes: a first electrode and a second electrode facing each other; a photoelectric conversion layer provided between the first electrode and the second electrode; and a buffer layer provided between the first electrode and the photoelectric conversion layer, and having an interface, to which an organic molecule or a halogen element is coordinated, with the photoelectric conversion layer.

Photoelectric conversion device and imaging device

A semiconductor nanoparticle dispersion is provided. The semiconductor nanoparticle including a plurality of semiconductor nanoparticles having a radius equal to or larger than an exciton Bohr radius; and a solvent dispersed with the plurality of semiconductor nanoparticles.

Semiconductor nanoparticle dispersion, a photoelectric conversion element, and an image pickup device for substantially uniform absorption edge wavelength

A dispersion material includes: a plurality of semiconductor nanoparticles; and an adsorption molecule configured to selectively absorb light having a predetermined wavelength and adsorbed to each of the plurality of semiconductor nanoparticles, the adsorption molecule having a plane aligned to be non-parallel to a direction from a center portion of each of the plurality of semiconductor nanoparticles toward an adsorption portion of each of the plurality of semiconductor nanoparticles.

Dispersion material, photoelectric conversion device, and imaging unit

Semiconductor nanoparticle dispersion for a photoelectric conersion layer

A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

Nitride-based III-V group compound semiconductor

A light emitting element includes: a laminated body including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer in this order, the second conductive semiconductor layer having a light extraction surface; and a recombination suppression structure provided in vicinity of an end surface of the active layer, the recombination suppression structure having a bandgap larger than a bandgap of the active layer.

Light emitting element, method of manufacturing the same, and light emitting device

Method for growing a nitride-based III-V Group compound semiconductor

A light emitting device includes: a laminated body including a first-conductivity type semiconductor layer, a light emitting layer, and a second-conductivity type semiconductor layer in this order; a contact layer provided in contact with the second-conductivity type semiconductor layer at least at a peripheral edge of the second-conductivity type semiconductor layer; a first electrode electrically connected to the first-conductivity type semiconductor layer; a second electrode provided nearer to the first-conductivity type semiconductor layer than the second-conductivity type semiconductor layer; and a conductor electrically connecting the second electrode and the contact layer to each other.

Light emitting device and method of manufacturing the same, and light emitting unit

Method for growing a nitride-based III-V group compound semiconductor

In a method for manufacturing a semiconductor device, the method includes the step of growing a nitride-based III-V compound semiconductor layer, which forms a device structure, directly on a substrate without growing a buffer layer, the substrate being made of a material with a hexagonal crystal structure and having a principal surface that is oriented off at an angle of not less than &#x2212;0.5&#xb0; and not more than 0&#xb0; from an R-plane with respect to a direction of a C-axis.

Method for manufacturing semiconductor device and semiconductor device

A method for making a light-emitting diode, which including the steps of: providing a substrate having at least one recessed portion on one main surface and growing a first nitride-based III-V group compound semiconductor layer through a state of making a triangle in section having a bottom surface of the recessed portion as a base thereby burying the recessed portion; laterally growing a second nitride-based III-V group compound semiconductor layer from the first nitride-based III-V group compound semiconductor layer over the substrate; and successively growing a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type on the second nitride-based III-V group compound semiconductor layer.

Light-emitting diode, method for making light-emitting diode, integrated light-emitting diode and method for making integrated light-emitting diode, method for growing a nitride-based III-V group compound semiconductor, light source cell unit, light-emitting diode

Growing community of inventors

Kanagawa, Japan

Michinori Shiomi