Jsr Corporation

Japan Synthetic Rubber Co., Ltd.

Japan Synthetic Rubber Co., Ltd., a Japanese Corporation

Sharp Kabushiki Kaisha Corporation

Michinori Nishikawa

Koichi Miyachi

Kinji Yamada

Takashi Okada

Eiji Hayashi

Atsushi Shiota

Yasuo Matsuki

Tsuyoshi Miyamoto

Shigeo Kawamura

Matthias Patz

Yasutake Inoue

Kaori Shirato

Kouichi Hasegawa

Masahiko Ebisawa

Masayoshi Suzuki

Hirofumi Sasaki

Shinichi Terashita

Hikaru Sugita

Hiroyuki Hakoi

Manabu Sekiguchi

Kyouyu Yasuda

Takashi Nagao

Kohei Goto

Nobuo Bessho

Atsushi Kumano

Yoshihisa Ohta

Yasuaki Yokoyama

Yoshikazu Miyamoto

Masayuki Takahashi

Junji Kawai

Yusuke Tsuda

Toshiyuki Akiike

Kazuaki Niwa

Mutsuhiko Yoshioka

Mayumi Kakuta

Masaaki Hanamura

Shinji Shiraki

Shoichi Nakata

Tsukasa Toyoshima

Noriyasu Shinohara

Kentarou Tamaki

Shigeo Shimizu

Masayuki Endoh

Hiroaki Tokuhisa

Kengo Wakabayashi

Youngsoo Seo

Satoko Hakamatsuka

Akio Saito

Yoshiji Yuumoto

Yasuaki Mutsuga

Hidenori Suzuki

Katsuyuki Kakinoki

Yoshihisa Nakase

Noriyasu Sinohara

Takahiro Matsumoto

Satoshi Fukuma

Ryou Ueda

Kouchi Hasegawa

A method for producing a liquid crystal display includes providing a first substrate having a first electrode and a second electrode on a surface of the first substrate. The first and the second electrodes are made of conductive films. A liquid crystal aligning agent is applied to the surface of the first substrate to form an alignment film on the first substrate. The liquid crystal aligning agent includes at least one of: a polymer that includes a photoalignment structure and a polymerizable carbon-carbon double bond; a polymer that includes a photoalignment structure, and a component that includes a polymerizable carbon-carbon double bond; or a polymer that includes a photoalignment structure and a polymerizable carbon-carbon double bond, and a component that includes a polymerizable carbon-carbon double bond. The second substrate is provided to form a liquid crystal cell. Light is applied to the liquid crystal cell.

Method for producing liquid crystal display

There is provided a radiation sensitive refractive index changing composition containing an inorganic oxide particle, a polymerizable compound, a radiation sensitive decomposer and an escapable compound. The radiation sensitive decomposer decomposes upon exposure to radiation to form an acid, base or radical, and this decomposed product increases the molecular weight of the polymerizable compound.

Radiation sensitive refractive index changing composition, pattern forming method and optical material

A chemical mechanical polishing stopper film comprising at least one organic polymer, said film having a dielectric constant of 4 or lower, and a chemical mechanical polishing method. The chemical mechanical polishing method comprises forming a chemical mechanical polishing stopper film comprising at least one organic polymer on an insulating film so that the stopper film is interposed between the insulating film and a metal film to be removed by chemical mechanical polishing, and then removing the metal film with a chemical mechanical polishing slurry.

Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing

A composition for film formation which comprises:

Composition for film formation, method of film formation, and silica-based film

An insulating film for semiconductors which has excellent adhesion to films formed by CVD and is useful as a dielectric film in semiconductor devices and the like is provided. The insulating film is obtained by a method comprising: (A) a step of subjecting a substrate to at least either of (A-1) at least one treatment selected from the group consisting of an ultraviolet irradiation treatment, an oxygen plasma treatment, a nitrogen plasma treatment, a helium plasma treatment, an argon plasma treatment, a hydrogen plasma treatment and an ammonia plasma treatment, and (A-2) a treatment with at least one of alkoxysilane compound having a reactive group and a product of the hydrolysis and condensation thereof; and (B) a step of applying a composition for film formation which comprises an organic solvent and either or both of at least one compound selected from the group consisting of compounds represented by the general formulae (1) to (4) as described hereinabove, and a hydrolysis/condensation product obtained by hydrolyzing and condensing the at least one compound, to the substrate and heating the resulting coating.

Method of film formation, insulating film, and substrate for semiconductor

a composition for film formation which can be cured in a short time period and give a film having a low dielectric constant and excellent in heat resistance, adhesion and cracking resistance, a polymer for use in the composition and a process for producing the polymer. The composition prepared by dissolving the polymer having specific repeating units in a solvent has excellent film-forming properties. The polymer has repeating units represented by the following general formula (1):wherein Z and Y are as defined hereinabove.

Polymer, process for production, composition for film formation containing the same, method of film formation, and insulating film

A composition for film formation capable of forming a coating film excellent in low dielectric constant characteristics, cracking resistance, modulus of elasticity, and adhesion to substrates and useful as an interlayer insulating film material in semiconductor devices, etc. The composition for film formation contains (A) at least one member selected from an aromatic polyarylene and an aromatic poly(arylene ether), (B) a polyvinylsiloxane, and (C) an organic solvent.

Composition for film formation and material for insulating film formation

A stacked film for semiconductor having superior adhesion to a coating film formed by a CVD process in, for example, semiconductor devices, an insulating film having the stacked film and a substrate for semiconductor using the insulating film are disclosed. The stacked film comprises (A) a film of an organic compound having a carbon content of 60% by weight or more and (B) a film prepared by heating a hydrolytic condensate obtained by hydrolysis and condensation of at least one compound selected from the group consisting of specific compounds represented by the general formulae (51) to (54) described hereinabove.

Stacked film, insulating film and substrate for semiconductor

Radiation sensitive composition for forming an insulating film, insulating film and display device

A method for the formation of a silica film which comprises treating a film in a supercritical medium, the film comprising (A) a siloxane compound and (B) at least one member selected from the group consisting of (B-1) a compound compatible with or dispersible in ingredient (A) and having a boiling or decomposition temperature of from 150 to 500&deg; C. and (B-2) a surfactant. The silica film has excellent mechanical strength showing a dielectric constant of generally 2.2 or lower, and hence is useful as a dielectric film in semiconductor devices and the like.

Method for the formation of silica film, silica film, insulating film, and semiconductor device

A stacked film, a method for the production of the stacked film, an insulating film comprising the stacked film, and a substrate for semiconductor, using the insulating film. The stacked film comprises films of two or more kinds of alkoxysilane hydrolysis condensates having 5 nm or more difference in a mean radius of gyration, or films of alkoxysilane hydrolysis condensate having 0.3 or more difference in the dielectric constant. The stacked film is obtained by applying a coating solution comprising (B) a compound having a mean radius of gyration of less than 10 nm, and then applying a coating solution comprising (A) a compound having a mean radius of gyration of from 10 to 30 nm, followed by heating. The stacked film provides a dielectric film (substrate for semiconductor) having superior adhesion to a CVD film.

Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor

A method of manufacturing an insulating film-forming material comprising a curable composition comprisING (A) an inorganic polymer compound or an organic polymer compound and (B) an organic solvent, which comprises treating the curable composition with a zeta potential-producing filter material. Because the curable composition has a very small content of alkali metals and heavy metals, the composition is suitably used for the manufacture of materials for forming insulating films which have a wide variety of applications in the electronic field.

Method of manufacturing material for forming insulating film

Composition for resist underlayer film and method for producing the same

Diyne-containing (co)polymer, processes for producing the same, and cured film

Growing community of inventors

Ibaraki, Japan

Michinori Nishikawa