Toyoda Gosei Co., Ltd.

Other

Nagoya University

Research Development Corporation of Japan

Kabushiki Kaisha Toyota Chuo Kenkyusho

Japan Science and Technology Agency

Michinari Sassa

Katsuhide Manabe

Hisaki Kato

Shiro Yamazaki

Norikatsu Koide

Isamu Akasaki

Naoki Shibata

Masayoshi Koike

Akira Mabuchi

Masafumi Hashimoto

Makoto Asai

Shinya Asami

Junichi Umezaki

Hiroshi Amano

Takahiro Kozawa

Makoto Tamaki

Takahide Oshio

Masahiro Kotaki

Masami Yamada

Masafumi Hasimoto

A light-emitting semiconductor device () consecutively includes a sapphire substrate (), an AlN buffer layer (), a silicon (Si) doped GaN n-layer () of high carrier (n-type) concentration, a Si-doped (AlGa)InN n-layer () of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (AlGa)InN emission layer (), and a Mg-doped (AlGa)InN p-layer (). The AlN layer () has a 500 &#x212b; thickness. The GaN n-layer () has about a 2.0 &#x3bc;m thickness and a 2&#xd7;10/cmelectron concentration. The n-layer () has about a 2.0 &#x3bc;m thickness and a 2&#xd7;10/cmelectron concentration. The emission layer () has about a 0.5 &#x3bc;m thickness. The p-layerhas about a 1.0 &#x3bc;m thickness and a 2&#xd7;10/cmhole concentration. Nickel electrodes () are connected to the p-layer () and n-layer (), respectively. A groove () electrically insulates the electrodes (). The composition ratio of Al, Ga, and In in each of the layers () is selected to meet the lattice constant of GaN in the n-layer (). The LED () is designed to improve luminous intensity and to obtain purer blue color.

Light-emitting semiconductor device using group III nitrogen compound

A light-emitting semiconductor device () consecutively includes a sapphire substrate (), an AlN buffer layer (), a silicon (Si) doped GaN n-layer () of high carrier (n-type) concentration, a Si-doped (AlGa)InN n-layer () of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (AlGa)InN emission layer (), and a Mg-doped (AlGa)InN p-layer (). The AlN layer () has a 500 &#x212b; thickness. The GaN n-layer () has about a 2.0 &#x3bc;m thickness and a 2&#xd7;10/cmelectron concentration. The n-layer () has about a 2.0 &#x3bc;m thickness and a 2&#xd7;10/cmelectron concentration. The emission layer () has about a 0.5 &#x3bc;m thickness. The p-layer 6 has about a 1.0 &#x3bc;m thickness and a 2&#xd7;10/cmhole concentration. Nickel electrodes () are connected to the p-layer () and n-layer (), respectively. A groove () electrically insulates the electrodes (). The composition ratio of Al, Ga, and In in each of the layers () is selected to meet the lattice constant of GaN in the n-layer (). The LED () is designed to improve luminous intensity and to obtain purer blue color.

Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity

Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlGaN) in which the n-layer of n-type gallium nitride compound semiconductor (AlGaN) is of double-layer structure including an n-layer of low carrier concentration and an n-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlGaN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an i-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an i-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlGaN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

Method for manufacturing a gallium nitride group compound semiconductor

Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (Al Ga N) in which the n-layer of n-type gallium nitride compound semiconductor (Al Ga N) is of double-layer structure including an n-layer of low carrier concentration and an n -layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (Al Ga N); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an i -layer of low impurity concentration containing p-type impurities in comparatively low concentration and an i -layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (Al Ga N) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

Method for producing a light-emitting semiconductor device

Light-emitting semiconductor device using gallium nitride group compound

Gallium nitride group compound semiconductor

Light emitting device

A light-emitting semiconductor device (,) consecutively includes a sapphire substrate (,), an AlN buffer layer (,), a silicon (Si) doped GaN n,-layer (,) of high carrier (n-type) concentration, a Si-doped (Al,Ga,),In,N n,-layer (,) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Al,Ga,),In,N emission layer (,), and a Mg-doped (Al,Ga,),In,N p-layer (,). The AlN layer (,) has a 500 &angst; thickness. The GaN n,-layer (,) has about a 2.0 &mgr;m thickness and a 2&times;10,/cm,electron concentration. The n,-layer (,) has about a 2.0 &mgr;m thickness and a 2&times;10,/cm,electron concentration. The emission layer (,) has about a 0.5 &mgr;m thickness. The p-layer,has about a 1.0 &mgr;m thickness and a 2&times;10,/cm,hole concentration. Nickel electrodes (,) are connected to the p-layer (,) and n,-layer (,), respectively. A groove (,) electrically insulates the electrodes (,). The composition ratio of Al, Ga, and In in each of the layers (,) is selected to meet the lattice constant of GaN in the n,-layer (,). The LED (,) is designed to improve luminous intensity and to obtain purer blue color.

A semiconductor device having an n-type layer of gallium nitride that is doped with silicon and has a resistively ranging from 3&times;10,&OHgr;cm to 8&times;,&OHgr;cm or a carrier concentration ranging from 6&times;10,/cm,to 3&times;10,/cm,.

Light emitting semiconductor device using gallium nitride group compound

A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.x3 Ga.sub.1-x3).sub.y3 In.sub.1-y3 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N emission layer (5), and a Mg-doped (Al.sub.x1 Ga.sub.1-x1).sub.y1 In.sub.1-y1 N p-layer (6). The AlN layer (2)--is 500 .ANG. in thickness. The GaN N.sup.+ -layer (3) is about 2.0 .mu.m in thickness and has an electron concentration of about 2.times.10.sup.18 /cm.sup.3. The n.sup.+ -layer (4) is about 2.0 .mu.m in thickness and has an electron concentration of about 2.times.10.sup.18 /cn.sup.3. The emission layer (5) is about 0.5 .mu.m in thickness. The p-layer 6 is about 1.0 .mu.m in thickness and has a hole concentration of about 2.times.10.sup.17 /cm.sup.3. Nickel electrodes (7, 8) are connected to the p-layer (6) and n.sup.+ -layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8) from each other. The composition ration of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n.sup.+ -layer (3). The LED (10) is designed to improve luminous intensity and to obtain a purer blue color.

Light-emitting semiconductor device using group III Nitrogen compound

Disclosed is a light-emitting semiconductor device which comprises an N-layer of N-type nitrogen-Group III compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0, a P-layer of P-type nitrogen-Group III compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0 and a Zn doped semi-insulating I-layer of nitrogen-Group III compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0. The semi-insulating I-layer has a 20 to 3000 .ANG. thickness and can emit light in the range of 485 to 490 nm. By employing the I-layer, the light-emitting diode as a whole can emit light in the range of 450 to 480 nm.

Light emitting semiconductor device using nitrogen-Group III compound

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Nagoya, Japan

Michinari Sassa