Sumitomo Electric Industries, Limited

Michimasa Miyanaga

Hideaki Nakahata

Naho Mizuhara

Issei Satoh

Keisuke Tanizaki

Seiji Nakahata

Yoshiyuki Yamamoto

Shinsuke Fujiwara

Koji Uematsu

Takuji Okahisa

Takashi Sakurada

Akira Yamakawa

Nozomu Kawabe

Osamu Komura

Tomohiro Kawase

Yukihiro Oishi

Masatada Numano

Satoshi Arakawa

Takeshi Uchihara

Ai Itoh

Masashi Yoshimura

Hisao Takeuchi

Noboru Uchimura

Eisuke Hiro

Provided is a composite material suitable for forming a part for continuous casting capable of producing cast materials of excellent surface quality for a long period of time and with which a molten metal is inhibited from flowing into a gap between a nozzle and a moving mold. A composite material (nozzle) includes a porous bodyhaving a large number of pores and a filler incorporated in at least part of a portion that comes into contact with the molten metal, the portion being part of a surface portion of the porous body. The filler incorporated in the porous bodyis at least one selected from a nitride, a carbide, and carbon.

Composite material, part for continuous casting, continuous casting nozzle, continuous casting method, cast material, and magnesium alloy cast coil material

A coil material capable of contributing to an improvement of the productivity of a high-strength magnesium alloy sheet and a method for manufacturing the coil material are provided. Regarding the method for manufacturing a coil material through coiling of a sheet material formed from a metal into the shape of a cylinder, so as to produce the coil material, the sheet material is a cast material of a magnesium alloy discharged from a continuous casting machine and the thickness t (mm) thereof is 7 mm or less. The sheet materialis coiled with a coiler while the temperature T (&#xb0; C.) of the sheet materialjust before coiling is controlled to be a temperature at which the surface strain ((t/R)&#xd7;100) represented by the thickness t and the bending radius R (mm) of the sheet materialbecomes less than or equal to the elongation at room temperature of the sheet material

Coil material and method for manufacturing the same

Group-III nitride crystal composites made up of especially processed crystal slices, cut from III-nitride bulk crystal, whose major surfaces are of {1-10&#xb1;2}, {11-2&#xb1;2}, {20-2&#xb1;1} or {22-4&#xb1;1} orientation, disposed adjoining each other sideways with the major-surface side of each slice facing up, and III-nitride crystal epitaxially present on the major surfaces of the adjoining slices, with the III-nitride crystal containing, as principal impurities, either silicon atoms or oxygen atoms. With x-ray diffraction FWHMs being measured along an axis defined by a &#x3c;0001&#x3e; direction of the substrate projected onto either of the major surfaces, FWHM peak regions are present at intervals of 3 to 5 mm width. Also, with threading dislocation density being measured along a &#x3c;0001&#x3e; direction of the III-nitride crystal substrate, threading-dislocation-density peak regions are present at the 3 to 5 mm intervals.

Composite of III-nitride crystal on laterally stacked substrates

SiCAlNcrystals in a mixed crystal state are formed. A method for manufacturing an easily processable SiCAlNsubstrate, a method for manufacturing an epitaxial wafer, a SiCAlNsubstrate, and an epitaxial wafer are provided. A method for manufacturing a SiCAlNsubstrateincludes the following steps. First, a Si substrateis prepared. A SiCAlNlayer(0&#x3c;v&#x3c;1, 0&#x2266;w&#x3c;1, 0&#x3c;x&#x3c;1, and 0&#x3c;v+w+x&#x3c;1) is then grown on the Si substrateby a pulsed laser deposition method.

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Group-III nitride crystal composites made up of especially processed crystal slices, cut from III-nitride bulk crystal, whose major surfaces are of {1-10&#xb1;2}, {11-2&#xb1;2}, {20-2&#xb1;1} or {22-4&#xb1;1} orientation, disposed adjoining each other sideways with the major-surface side of each slice facing up, and III-nitride crystal epitaxially present on the major surfaces of the adjoining slices, with the III-nitride crystal containing, as principal impurities, either silicon atoms or oxygen atoms.

A method of manufacturing a nitride substrate includes the following steps. Firstly, a nitride crystal is grown. Then, the nitride substrate including a front surface is cut from the nitride crystal. In the step of cutting, the nitride substrate is cut such that an off angle formed between an axis orthogonal to the front surface and an m-axis or an a-axis is greater than zero. When the nitride crystal is grown in a c-axis direction, in the step of cutting, the nitride substrate is cut from the nitride crystal along a flat plane which passes through a front surface and a rear surface of the nitride crystal and does not pass through a line segment connecting a center of a radius of curvature of the front surface with a center of a radius of curvature of the rear surface of the nitride crystal.

Method of manufacturing nitride substrate, and nitride substrate

There are provided a SiCAlNsubstrate that achieves high crystallinity and low costs, an epitaxial wafer, and manufacturing methods thereof. A method for manufacturing a SiCAlNsubstrate according to the present invention includes the steps of preparing a different type of substrateand growing a SiCAlNlayer having a main surface on the different type of substrate. The component ratio x+v at the main surface of the SiCAlNlayer is 0&#x3c;x+v&#x3c;1. The component ratio x+v increases or decreases monotonically from the interface between the SiCAlNlayer and the different type of substrateto the main surface of the SiCAlNlayer. The component ratio x+v at the interface between the SiCAlNlayer and the different type of substrateis closer to that of the material of the different type of substratethan the component ratio x+v at the main surface of the SiCAlNlayer.

Provided is a method of manufacturing III-nitride crystal having a major surface of plane orientation other than {0001}, designated by choice, the III-nitride crystal manufacturing method including: a step of slicing III-nitride bulk crystal through a plurality of planes defining a predetermined slice thickness in the direction of the designated plane orientation, to produce a plurality of III-nitride crystal substrates having a major surface of the designated plane orientation; a step of disposing the substrates adjoining each other sideways in a manner such that the major surfaces of the substrates parallel each other and such that any difference in slice thickness between two adjoining III-nitride crystal substrates is not greater than 0.1 mm; and a step of growing III-nitride crystal onto the major surfaces of the substrates.

Method of manufacturing III-nitride crystal

Affords AlGaN crystal growth methods, as well as AlGaN crystal substrates, wherein bulk, low-dislocation-density crystals are obtained. The AlGaN crystal (0&#x3c;x&#x2266;1) growth method is a method of growing, by a vapor-phase technique, an AlGaN crystal (), characterized by forming, in the growing of the crystal, at least one pit () having a plurality of facets () on the major growth plane () of the AlGaN crystal (), and growing the AlGaN crystal () with the at least one pit () being present, to reduce dislocations in the AlGaN crystal ().

Affords nitride semiconductor crystal manufacturing apparatuses that are durable and that are for manufacturing nitride semiconductor crystal in which the immixing of impurities from outside the crucible is kept under control, and makes methods for manufacturing such nitride semiconductor crystal, and the nitride semiconductor crystal itself, available. A nitride semiconductor crystal manufacturing apparatus () is furnished with a crucible (), a heating unit (), and a covering component (). The crucible () is where, interiorly, source material () is disposed. The heating unit () is disposed about the outer periphery of the crucible (), where it heats the crucible () interior. The covering component () is arranged in between the crucible () and the heating unit (). The covering component () includes a first layer () formed along the side opposing the crucible (), and made of a metal whose melting point is higher than that of the source material (), and a second layer () formed along the outer periphery of the first layer (), and made of a carbide of the metal that constitutes the first layer ().

Nitride semiconductor crystal manufacturing apparatus, nitride semiconductor crystal manufacturing method, and nitride semiconductor crystal

A compound semiconductor single-crystal manufacturing device () is furnished with: a laser light source () making it possible to sublime a source material by directing a laser beam onto the material; a reaction vessel () having a laser entry window () through which the laser beam output from the laser light source () can be transmitted to introduce the beam into the vessel interior, and that is capable of retaining a starting substrate () where sublimed source material is recrystallized; and a heater () making it possible to heat the starting substrate (). The laser beam is shone on, to heat and thereby sublime, the source material within the reaction vessel (), and compound semiconductor single crystal is grown by recrystallizing the sublimed source material onto the starting substrate (); afterwards the laser beam is employed to separate the compound semiconductor single crystal from the starting substrate ().

Compound semiconductor single-crystal manufacturing device and manufacturing method

There are provided a method for manufacturing a SiCAlNsubstrate having a reduced number of cracks and high processability, a method for manufacturing an epitaxial wafer, a SiCAlNsubstrate, and an epitaxial wafer. A method for manufacturing a SiCAlNsubstrateincludes the following steps. First, a Si substrateis prepared. A SiCAlNlayer (0&#x3c;v&#x3c;1, 0&#x3c;w&#x3c;1, 0&#x3c;x&#x3c;1, and 0&#x3c;v+w+x&#x3c;1) is then grown on the Si substrate at a temperature below 550&#xb0; C.

Affords large-diametric-span AlN crystals, applicable to various types of semiconductor devices, with superior crystallinity, a method of growing the AlN crystals, and AlN crystal substrates. The AlN crystal growth method is a method in which an AlN crystal () is grown by vapor-phase epitaxy onto a seed crystal substrate () placed inside a crystal-growth compartment () within a crystal-growth vessel () provided within a reaction chamber, and is characterized in that during growth of the crystal, carbon-containing gas is supplied to the inside of the crystal-growth compartment ().

AlN crystal and method for growing the same, and AlN crystal substrate

III-nitride crystal composites are made up of especially processed crystal slices cut from III-nitride bulk crystal having, ordinarily, a {0001} major surface and disposed adjoining each other sideways, and of III-nitride crystal epitaxially on the bulk-crystal slices. The slices are arranged in such a way that their major surfaces parallel each other, but are not necessarily flush with each other, and so that the [0001] directions in the slices are oriented in the same way.

Group-III nitride crystal composite

Affords methods of growing III nitride single crystals of favorable crystallinity with excellent reproducibility, and the III nitride crystals obtained by the growth methods. One method grows a III nitride single crystal () inside a crystal-growth vessel (), the method being characterized in that a porous body formed from a metal carbide, whose porosity is between 0.1% and 70% is employed in at least a portion of the crystal-growth vessel (). Employing the crystal-growth vessel () makes it possible to discharge from 1% to 50% of a source gas () inside the crystal-growth vessel () via the pores in the porous body to the outside of the crystal-growth vessel ().

Growing community of inventors

Itami, Japan

Michimasa Miyanaga