Sharp Kabushiki Kaisha Corporation

Michiko Takei

Yoshiyuki Harumoto

Tetsuya Aita

Yutaka Takafuji

Yasumori Fukushima

Masahiko Suzuki

Yoshimasa Chikama

Takeshi Hara

Kazuhide Tomiyasu

Okifumi Nakagawa

Hirohiko Nishiki

Yoshifumi Ohta

Tsuyoshi Inoue

Yuuji Mizuno

Tohru Okabe

Takeshi Yaneda

Kazuo Nakagawa

Shin Matsumoto

Go Mori

Masao Moriguchi

Kenji Nakanishi

Yohsuke Kanzaki

Tetsuya Okamoto

Yoshiki Nakatani

Takatsugu Kusumi

Yudai Takanishi

Steven Roy Droes

Yoshinobu Miyamoto

Yoshifumi Ota

Tetsuo Fukaya

Yuuiji Mizuno

Yoshiyuki Miyajima

Steven Droes

An active matrix substrate includes a plurality of pixels arranged in a matrix, a plurality of capacitor lines () extending in one of directions in which the pixels are aligned and in parallel to each other, a plurality of TFTs (), one for each of the pixels, a protective film () covering the TFTs (), a plurality of pixel electrodes () arranged in a matrix on the protective film () and connected to the respective corresponding TFTs (), and a plurality of auxiliary capacitors (), one for each of the pixels. Each of the auxiliary capacitors () includes the corresponding capacitor line (), the corresponding pixel electrode (), and the protective film () between the corresponding capacitor line () and the corresponding pixel electrode ().

Active matrix substrate and liquid crystal display panel including the same, and method for manufacturing active matrix substrate with gate insulating film not provided where auxiliary capacitor is provided

The present invention provides an oxide semiconductor capable of achieving a thin film transistor having stable transistor characteristics, a thin film transistor having a channel layer formed of the oxide semiconductor and a production method thereof, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor. The oxide semiconductor includes indium, gallium, zinc, and oxygen as constituent atoms, and the oxygen content of the oxide semiconductor is 87% to 95% of the stoichiometric condition set as 100%, in terms of atomic units.

Oxide semiconductor, thin film transistor array substrate and production method thereof, and display device

A semiconductor device (A) according to the present invention includes an oxide semiconductor layer (), first and second source electrodes (and), and first and second drain electrodes (and). The second source electrode () is formed to be in contact with a top surface of the first source electrode and inner to the first source electrode (). The second drain electrode () is formed to be in contact with a top surface of the first drain electrode () and inner to the first drain electrode (). The oxide semiconductor layer () is formed to be in contact with the top surface of the first source electrode () and the top surface of the first drain electrode ().

Thin film transistor having an oxide semiconductor thin film formed on a multi-source drain electrode

The present invention provides a thin film transistor including an oxide semiconductor layer () for electrically connecting a signal electrode () and a drain electrode (), the an oxide semiconductor layer being made from an oxide semiconductor; and a barrier layer () made from at least one selected from the group consisting of Ti, Mo, W, Nb, Ta, Cr, nitrides thereof, and alloys thereof, the barrier layer () being in touch with the signal electrode () and the oxide semiconductor layer () and separating the signal electrode () from the oxide semiconductor layer (). Because of this configuration, the thin film transistor can form and maintain an ohmic contact between the first electrode and the channel layer, thereby being a thin film transistor with good properties.

Thin film transistor, method for manufacturing same, active matrix substrate, display panel and display device

The present invention provides an oxide semiconductor that realizes a TFT excellent in electric properties and process resistance, a TFT comprising a channel layer formed of the oxide semiconductor, and a display device equipped with the TFT. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, wherein the oxide semiconductor contains Ga (gallium), In (indium), Zn (zinc), and O (oxygen) as constituent atoms, and the oxide semiconductor has Zn atomic composition satisfying the equation of 0.01&#x2266;Zn/(In+Zn)&#x2266;0.22.

Oxide semiconductor including Ga, In, Zn, and O and A thin film transistor and a display with the oxide semiconductor including Ga, In, Zn, and O

An object of this invention is to provide a semiconductor device in which TFTs with high mobility are arranged in both of display and peripheral circuit areas. A semiconductor device fabricating method according to the present invention includes the steps of: irradiating an amorphous silicon layer () with energy, thereby obtaining a microcrystalline silicon layer; and forming a doped semiconductor layer () on the amorphous silicon layer (). In the step of irradiating, the amorphous silicon layer () is irradiated with energy that has a first quantity, thereby forming a first microcrystalline silicon layer (A) including a channel layer for a first TFT (A), and is also irradiated with energy that has a second quantity, which is larger than the first quantity, thereby forming a second microcrystalline silicon layer (B) including a channel layer for a second TFT (B).

Method for manufacturing semiconductor device, semiconductor device, and display device

A TFTincludes a gate electrode, a gate insulating film, a semiconductor layer, a source electrode, a drain electrode, etc. The semiconductor layeris comprised of a metal oxide semiconductor (IGZO), and has a source portionthat contacts the source electrode, a drain electrodethat contacts the drain electrode, and a channel portionthat is located between the source and drain portions. A reduced regionis formed at least in the channel portionof the semiconductor layer, and the reduced regionhas a higher content of a simple substance of a metal such as In than the remaining portion of the semiconductor layer

Thin film transistor

A semiconductor device includes: a thin film transistor having a gate line (), a first insulating film (), an island-shaped oxide semiconductor layer (), a second insulating film (), a source line (), a drain electrode (), and a passivation film; and a terminal portion having a first connecting portion () made of the same conductive film as the gate line, a second connecting portion () made of the same conductive film as the source line and the drain electrode, and a third connecting portion () formed on the second connecting portion. The second connecting portion is in contact with the first connecting portion within a first opening () provided in the first and second insulating films; the third connecting portion () is in contact with the second connecting portion within a second opening () provided in the passivation film; and the second connecting portion () covers end faces of the first and second insulating films within the first opening (), but does not cover an end face of the passivation film () within the second opening (). As a result, the taper shape of a contact hole of the terminal portion can be controlled with a high precision.

Semiconductor device and method for producing same

The present invention has an object of providing a TFT in which generation of an OFF current is reduced by an efficient manufacturing method. A thin film transistoraccording to the present invention has a gate electrodeformed on a substrate, an insulating layerformed on the gate electrode, a microcrystalline amorphous silicon layerand an amorphous silicon layerthat are formed on the insulating layer, a semiconductor layercontaining an impurity formed on the amorphous silicon layer, and a source electrodeA and a drain electrodeB that are formed on the semiconductor layercontaining an impurity. The microcrystalline amorphous silicon layerand the semiconductor layercontaining an impurity are connected to each other through the amorphous silicon layerwithout being in direct contact with each other.

Thin film transistor, display device, and manufacturing method for thin film transistor and display device

Disclosed is a high-quality, efficiently manufacturable thin film transistor in which leakage current is minimized. The thin film transistor is provided with a semiconductor layer () that contains a channel region (C) having a microcrystalline semiconductor; source and drain contact layers (S andD) that contains impurities; a first source metal layer (S) and a first drain metal layer (D), and a second source metal layer (S) and a second drain metal layer (D). The end portion of the second metal source layer (S) is located at a position receded from the end portion of the first metal source layer (S) and the end portion of the second drain metal layer (D) is located at a position receded from the end portion of the first drain metal layer (D). The semiconductor layer () contains low concentration impurity diffusion regions formed near the end portions of the aforementioned source contact layer (S) and drain contact layer (D).

Thin-film transistor, display device, and manufacturing method for thin-film transistors

The present invention is intended to provide a glass substrate (), made of an insulating material, which can constitute a semiconductor apparatus () by transferring a single crystal silicon film () or a substrate including a semiconductor device onto a surface () of the insulating substrate, a transferred surface () being part of the surface (), the single crystal silicon film () capable of being provided on the transferred surface (), and the transferred surface () having an arithmetic mean roughness of not more than 0.4 nm.

Insulating substrate for semiconductor apparatus, semiconductor apparatus, and method for manufacturing semiconductor apparatus

Provided is a semiconductor device manufacturing method wherein the following steps are performed; a step of forming at least a part of an element on a base body layer, a step of forming a peeling layer, a step of forming a planarizing film; a step of forming a die by separating the base body layer at a separating region; a step of bonding the die to a substrate by bonding the die on the planarizing film; and a step of peeling and removing a part of the base body layer along the peeling layer. Prior to the step of forming the die, a step of forming a groove opened on the surface of the planarizing film such that at least a part of the separating region is included on the bottom surface of the groove, and forming the die such that the die has a polygonal outer shape wherein all the internal angles are obtuse by forming the groove is performed.

Semiconductor device and method for manufacturing same

A method for manufacturing a semiconductor device includes: a first step of forming a base layer, which includes an element portion having a gate electrode and a flat interlayer insulating film formed so as to cover the gate electrode; a second step of ion implanting a delamination material into the base layer to form a delamination layer; a third step of bonding the base layer to a substrate; and a fourth step of separating and removing a part of the base layer along the delamination layer. An implantation depth of the delamination material in the gate electrode is substantially the same as that of the delamination material in the interlayer insulating film.

Semiconductor device manufacturing method, semiconductor device and display apparatus

A production method for producing a semiconductor device capable of improving surface flatness and suppressing a variation in electrical characteristics of the semiconductor chip, and improving production yield. The production method includes the steps of: forming a first insulating film on a semiconductor substrate and on a conductive pattern film formed on the semiconductor substrate and reducing a thickness of the first insulating film in a region where the conductive pattern film is arranged by patterning; forming a second insulating film and polishing the second insulating film, thereby forming a flattening film; implanting a substance for cleavage into the semiconductor substrate through the flattening film, thereby forming a cleavage layer; transferring the semiconductor chip onto a substrate with an insulating surface so that the chip surface on the side opposite to the semiconductor substrate is attached thereto; and separating the semiconductor substrate from the cleavage layer.

Growing community of inventors

Osaka, Japan

Michiko Takei