Semiconductor Energy Laboratory Co., Ltd.

Fujitsu Corporation

Kyocera Corporation

Michiko Takei

Hongyong Zhang

Tatsuya Ohori

Yasuyoshi Mishima

Hideomi Suzawa

Naoaki Yamaguchi

Akito Hara

Kohta Yoshikawa

Satomi Nagasawa

Mitsuru Chida

Jun Koyama

Hideki Uochi

Yuugo Goto

Nobuo Sasaki

Ryoichi Mukai

Kouji Watanabe

Hiroshi Tsuruta

Hideko Murakami

Natsuhito Honda

Masahiko Doki

Ken-ichi Oki

Yuka Ishizuka

Hiroyuki Bamba

Masahiro Okabe

Yuuki Wada

Tamotsu Wada

Shuuji Ishikawa

Tatsuya Kakehi

Takafumi Oka

Yasumasa Sekigami

Kohji Ohgata

Masao Inadome

Takafumi Satou

Mari Hodate

Tomoyasu Takahashi

Hiroshi Kuroki

Norihisa Matsumoto

Nayu Noumachi

Katsuyuki Suga

Ken-iti Yanai

Tomoyuki Urano

Yasuyuki Sano

A handheld electronic device and display method for a handheld electronic device provide for an initialization screen to be displayed by a display unit, in response to user input, to display symbols reflecting an intent of the user. The handheld electronic device includes a user input unit having a first key to which a symbol of a first type is allocated and a symbol of a second type is not allocated, and a second key to which a symbol of the first type and a symbol of the second type are both allocated; a display unit that, upon input via the user input unit, displays a symbol of the first type and/or a symbol of the second type; and a control unit that controls what the display unit displays.

Handheld electronic device and display method for a handheld electronic device

Provided is an electronic device which easily selects and executes an application relating to characters inputted by a user. A cellular phone is provided with a display unit which displays a character input screen, an operation unit for inputting characters to be displayed on the character input screen, and a control unit which controls the display unit to display a candidate for conversion or a predicted candidate of the characters inputted using the operation unit. The control unit displays the name of an application or the name of a processing in the application as the candidate for conversion or a predicted candidate, and when either name is selected, executes the processing of the application corresponding to the selected name.

Electronic device with predictive candidate selection based on character input

Provided is a mobile electronic device capable of reflecting a user's intention. While an initial screen for waiting for an incoming-call is being displayed on an LCD display unit, a control unit performs control so that a first type character display area and a second type character display area are displayed on the LCD display unit in place of the initial screen, wherein the first type character display area is an area for, when any of first keys is depressed, displaying a first type character (for example, a number such as '1', '2', &#x201c;3&#x201d;) assigned to the depressed first key and the second type character display area is an area for displaying a second type character (for example, &#x201c;a&#x201d;, &#x201c;i&#x201d;, &#x201c;u&#x201d;, etc. in Japanese Hiragana letter) assigned to the depressed first key.

Mobile electronic device

It is possible to provide a mobile display device which can improve usability even when the character size is increased for improving visibility. A method for controlling the mobile display device is also disclosed. A control unit () can set a conversion candidate of an input character displayed on a second display region (conversion candidate character display region ()) of a display unit () to a first display mode (normal mode) for displaying the conversion candidate in a first character size and to a second display mode (enlarged mode) for displaying the conversion candidate in a second character size greater than the first character size while differentiating a display priority of a plurality of conversion candidates to be displayed in the second display region in the first display mode and a display priority of a plurality of conversion candidates to be displayed in the second display region in the second display mode.

Mobile display device and method of controlling display of conversion candidates of input characters on the mobile display device

An active type liquid crystal display device, comprising an electrode being formed by using a transparent electrically conductive film constituting a pixel electrode, which allows the black matrix to be set as the common potential. Also claimed is an active type liquid crystal display device of the same type as above, comprising an electrode being formed on the same layer as that of the source line, which allows the black matrix to be set as the common potential.

Liquid crystal display device

A current path pattern of semiconductor material is formed on the insulating principal surface of a substrate. A gate pattern three-dimensionally crosses the current path pattern in first and second cross areas. A channel region of the current path pattern is defined in an area superposed upon by the gate pattern. A gate insulating film is disposed between the current path pattern and gate pattern. The current path pattern has a lightly doped drain structure on both sides of the channel region in the first cross area, and is not provided with the lightly doped drain structure in regions in contact with the channel region in the second cross area. TFTs are provided having a small off-current and being not necessary for high precision position alignment during manufacture processes even if a gate length is short.

Thin film transistor, liquid crystal display substrate, and their manufacture methods

An operating semiconductor layer is formed in such a manner that amorphous silicon layer is formed to be shaped so that it has a wide region and a narrow region and the narrow region is connected to the wide region at a position asymmetric to the wide region, and the amorphous silicon layer is crystallized by scanning a CW laser beam from the wide region toward the narrow region in a state that a polycrystalline silicon layer as a heat-retaining layer encloses the narrow region from a side face through the silicon oxide layer.

Method of Production of a thin film type semiconductor device having a heat-retaining layer

There is provided the step of forming a polysilicon film by scanning a laser irradiation region while irradiating a continuous wave laser onto an amorphous silicon film formed into an island or ribbon-like shape on a substrate. If a width of a rectangle in which the amorphous silicon film is inscribed is 30 &mgr;m or less, any one condition of (1) a top end shape of a pattern is a convex shape, (2) a top end shape is a concave shape and consists of straight lines and has three corner portions at a top end side, and both angles of the corner portions on both sides of the top end shape are set to 45 degree or more, (3) a top end shape is a concave shape and consists of curved lines, and (4) a width of a top end portion is 25 &mgr;m or less, is satisfied.

Polysilicon film forming method

A first layer made of polysilicon is formed on the surface of an underlying substrate. The surface of the first layer is exposed to an environment which etches silicon oxide. If the surface of the first layer is covered with a silicon oxide film, the silicon oxide film is removed. An energy is supplied to the first layer, the energy allowing silicon crystal to re-grow. Solid phase growth of silicon occurs in the first layer to planarize the surface thereof. A polysilicon film having small root mean square of roughness can be formed.

Method of manufacturing semiconductor device with polysilicon film

A liquid crystal display substrate including gate and drain bus lines that are electrically insulated from each other at cross areas, pixel electrodes between the cross areas, and first thin film transistors connecting corresponding drain bus lines and pixel electrodes. Each first thin film transistor includes a channel region where current flows in a first direction, and first and second impurity doped regions of, respectively, first and second impurity concentrations. The first and second doped regions sandwich the channel region. The second impurity concentration is higher than the first. Also, a second thin film transistor is formed in the peripheral circuit area, and includes a channel region where current flows in a second direction that is perpendicular to the first direction. Third impurity doped regions, disposed on both sides of the channel region, have a third impurity concentration.

Liquid crystal display substrate having TFTS in both an image display area and in a peripheral circuit area

A number of parallel light-interrupting stripes are formed over the entire TFT substrate, and light-interrupting patterns that are isolated from each other are formed separately from the light-interrupting stripes. Light interruption along gate bus patterns is effected by the light-interrupting stripes, while light interruption along data bus patterns is effected by elongating branches from the gate bus patterns. Light interruption between the tip of each branch and a polysilicon drain is effected by the isolated light-interrupting pattern.

Liquid crystal electro-optical device

A process of fabricating a liquid crystal electro-optical (display) device. The device includes discharge accelerating patterns extending from associated gate bus patterns and provided with a unique geometry. The disclosed geometry minimizes the dielectric breakdown of a gate insulating film attributable to plasma discharge between gate and source/drain electrodes of the associated thin film transistors.

Liquid crystal electro-optical device and process of fabricating same provided with discharge accelerating patterns for minimizing dielectric breakdown

TFT LCD device with gate/data lines in interrupting patterns

A polysilicon pattern constituting an active portion of a TFT is formed on a substrate so as to be curved to generally assume a U shape, and a gate pattern is formed as a straight conductor pattern. The gate pattern is so disposed as to cross the U-shaped polysilicon pattern plural times. The silicon pattern comprise a plurality of channel regions and impurity regions of which alignment is symmetrical.

Thin-film transistor and liquid crystal display device

Growing community of inventors

Kanagawa, Japan

Michiko Takei