Tokyo Electron Limited

Michikazu Nakamura

Masahiko Sugiyama

Naoki Akiyama

Yosuke Omori

Shinjiro Watanabe

Hirokatsu Kobayashi

Masayuki Harashima

Hajime Furuya

Dai Shinozaki

Yukio Sano

A film forming method of forming a silicon carbide film on a substrate to be processed includes: forming the silicon carbide film on the substrate to be processed by loading a holder that holds the substrate to be processed into a processing container of a film forming apparatus to place the holder on a stage, and supplying a raw material gas into the processing container; and removing a reaction product, which has been adhered to a part other than the substrate to be processed during the forming the silicon carbide film, by loading a plate-shaped member having at least a surface formed by pyrolytic carbon into the processing container to place the plate-shaped member on the stage, and supplying a fluorine-containing gas into the processing container.

Film forming method and film forming apparatus

A coating film forming apparatus includes: a coating nozzle; a horizontal moving mechanism that relatively moves a substrate and the coating nozzle; a pressure regulating mechanism that regulates a pressure inside the coating nozzle; and a controller that changes an amount of the coating solution to be supplied from the coating nozzle, wherein the coating nozzle includes: a discharge port that is formed long in a direction perpendicular to a direction of the relative movement with respect to the substrate; and a storage chamber that communicates with the discharge port and stores the coating solution therein, and wherein while the coating solution is applied to the substrate, the pressure regulating mechanism is controlled according to a change in width of the substrate, to regulate the pressure inside the storage chamber to thereby change a discharge amount per unit time of the coating solution to be discharged.

Coating film forming apparatus

A joining device includes a first holding unit configured to load and hold the first member on its top surface; a second holding unit disposed above the first holding unit while facing the first holding unit and configured to hold the second member; and a position adjustment mechanism configured to adjust a joining position between the first member held by the first holding unit and the second member held by the second holding unit. The second holding unit is of a circular plate shape, and the position adjustment mechanism includes four position-adjusting cam members disposed at equal intervals along an outer peripheral surface of the second holding unit, and moves the second holding unit in a horizontal direction.

Joining device and joining position adjustment method using joining device

A mounting method of sequentially mounting elements on a substrate includes a mounting process of mounting one element, which is taken out by a take-out part from an accommodating part in which the elements are accommodated, on a first contact region of the surface of the substrate where a liquid is coated. The method further includes a coating process of coating a liquid, by a coating part movably provided together with the take-out part, on a contact region of the surface of the substrate different from the first contact region when the one element is mounted on the first region.

Mounting method and mounting device

A bonding apparatus includes a thermal treating unit and a bonding unit that are integrally bonded together. The thermal treating unit includes a first thermal treating plate for supporting and thermally processing a superimposed substrate. The bonding unit includes a second thermal treating plate for supporting and thermally processing the superimposed substrate processed in thermal treating unit, and a pressing mechanism for pressing the superimposed substrate against the second thermal treating plate. The first thermal treating plate includes a cooling mechanism for cooling the superimposed substrate placed on the first heating plate. Each unit can depressurize the internal atmosphere to a specified degree of vacuum. The thermal treating unit has a plurality of carrying mechanisms for conveying the wafers between the two units.

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Nirasaki, Japan

Michikazu Nakamura