Sony Corporation

Michihisa Yano

Yasuhiro Kanaya

Hisashi Kimura

Naoki Sano

Masaki Hara

Tomohiko Abe

Koichi Iida

Mitsunobu Sekiya

Toshiyuki Sameshima

Seiji Kawaberi

Norihiro Ohse

Tsutomu Arai

Tsuneharu Nomura

Atsushi Kohno

The cathode-ray tube according to the present invention has on the inner surface of the funnel section of the body thereof a laminated layer comprising a first layer of black material, a metal backing layer and a second layer of black material. According to the configuration of the cathode-ray tube of the present invention, stray light reflected within the body of the cathode-ray tube is absorbed by the first layer of black material on the inner surface of the funnel, while stray light reflected off the inner surface of the funnel is absorbed by the second layer of black material. This makes it possible to reduce the amount of stray light incident upon the effective screen area of the panel section.

Cathode-ray tube and cathode-ray tube manufacturing method

A method and an apparatus for fabricating a thin film semiconductor device are disclosed. An a-Si:H thin film produced on a wafer is melting-recrystallized by irradiating a laser beam to it in a laser annealing chamber to produce a polycrystalline Si thin film. The wafer is then transported to a CVD chamber without exposing it to the outside air. A gate insulating film is produced on a clean surface of the polycrystalline Si thin film in the CVD chamber. In another case, an a-Si:H thin film is melting-recrystallized in the laser annealing chamber to produce a polycrystalline Si thin film and then the wafer is transported to a hydrogenating chamber without exposing it to the outside air. Thereafter the polycrystalline Si thin film is plasma hydrogenated in the hydrogenating chamber. The method and apparatus can fabricate thin film semiconductor devices having a high performance and a high reliability with a good uniformity by making a clean and high quality semiconductor/insulator interface or by hydrogenating a semiconductor thin film without changes in electrical conductivity.

Method and apparatus for fabricating a thin film semiconductor device

The present invention enlarges the effective display area of a CRT for projecting while maintaining the strength of the panel necessary to allow for normal usage without breaking. The inside portion of the effective display area inside the rectangular display area is of a predetermined radius, and protrudes inward, extending in all directions. The four corners of the display area are outside of the circular boundary line comprised of the standard thickness Tf. Non-display areas H which are outside the boundary line are flat or protuberant, and have a thickness greater than the standard thickness Tf. Accordingly, with the present invention, the effective display area A2 can be made larger than previous effective display areas A1 in the prior art, which could not extend beyond a border that included the four corners, while maintaining overall the necessary strength.

Cathode ray tube apparatus

Growing community of inventors

Kanagawa, Japan

Michihisa Yano