Rohm Co., Ltd.

Michihiko Mifuji

Isamu Nishimura

Satoshi Kageyama

Daiki Yanagishima

Toshiyuki Ishikawa

Kosei Osada

Tetsuya Kagawa

Nobuyuki Kasahara

Bungo Tanaka

Kunihiko Iwamoto

Kazumasa Nishio

Yasuhiro Fuwa

Hideaki Yanagida

Satoshi Nakagawa

Masaki Hino

Ryuta Maruyama

The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member.

Semiconductor device and semiconductor module

A semiconductor device of the present invention includes a semiconductor substrate, stripe-shaped trenches for separating the semiconductor substrate into a plurality of active regions, a buried film having a projecting portion that projects from the semiconductor substrate, buried into the trenches, a source region and drain region of a second conductivity type, which are a pair of regions formed in the active region, for providing a channel region of a first conductivity type for a region therebetween, and a floating gate consisting of a single layer striding across the source region and the drain region, projecting beyond the projecting portion in a manner not overlapping the projecting portion, in which an aspect ratio of the buried film is 2.3 to 3.67.

Semiconductor device with different material layers in element separation portion trench and method for manufacturing semiconductor device

A magnetoelectric converting element includes a substrate, a magnetosensitive layer, a first insulating layer, an underlying conductive layer, a second insulating layer, and a terminal conductor. The magnetosensitive layer is formed on the substrate. The first insulating layer is formed with first opening for exposing a part of the magnetosensitive layer. The underlying conductive layer is formed on the exposed part of the magnetosensitive layer. The second insulating layer is formed with a second opening for exposing a part of the underlying conductive layer. The terminal conductor is formed on the exposed part of the underlying conductive layer. The second opening is arranged to be located inside the first opening in plan view.

Magnetoelectric converting element and module utilizing the same

A semiconductor device has a resistor area and wiring area selectively disposed on a semiconductor substrate. In this semiconductor device, a second interlayer insulating film is formed above the semiconductor substrate, and a thin-film resistor is disposed on the second interlayer insulating film in the resistor area. Vias that contact the thin-film resistor from below are formed in the second interlayer insulating film. A wiring line is disposed on the second interlayer insulating film in the wiring area. A dummy wiring line that covers the thin-film resistor from above is disposed in a third wiring layer that is in the same layer as the wiring line, and an insulating film is interposed between the thin-film resistor and the dummy wiring line.

Semiconductor device with metal think film and via

An electronic device includes a semiconductor substrate, an electronic element mounted on the substrate, a conductive layer electrically connected to the electronic element, a sealing resin and a columnar conductor. The substrate has a recess formed in its obverse surface. The electronic element is mounted on the bottom surface of the recess. The conductive layer has an obverse-surface contacting region located on the obverse surface of the substrate. The sealing resin is disposed in at least a part of the recess for covering at least a part of the obverse surface of the substrate. The columnar conductor is electrically connected to the obverse-surface contacting region of the conductive layer and exposed from the sealing resin at a side opposite to the obverse surface of the substrate.

Electronic device

Non-volatile memory cell in semiconductor device

Semiconductor device and method of manufacturing the same

Method of manufacturing non-volatile memory cell with simplified step of forming floating gate

A semiconductor device of the present invention includes vertical double diffused MOS transistor. A gate electrode of the vertical double diffused MOS transistor is disposed within a trench formed on a semiconductor substrate and projects from a surface of the semiconductor substrate. On a side surface of the gate electrode, a side wall is formed. On the surface of the semiconductor substrate and a surface of the gate electrode, a metal silicide film is formed.

Vertical double diffused MOS transistor with a trench gate structure

A USG layer,is formed to cover an aluminum wiring,deposited a field oxide film,An organic SOG layer,whose thick layer can be easily formed is formed in a groove on the surface of the USG layer,Thus, the unevenness of the surface of the USG layer,can be relaxed in a degree. Further, an USG layer,is formed thereon is formed through the vapor phase growth technique using the high density plasma which can realize excellent embedding. Accordingly, the inter-metal dielectric film,having a flat upper surface can be formed. Further, the SOG step is carried out only once in the step of forming the organic SOG layer,thereby reducing the production cost. Further, since the organic SOG layer,can be encircled by the USG layers,and,having good film quality, even if the material of the organic SOG layer,is not so good, the inter-metal dielectric film,with an excellent dielectric property can be formed. Thus, a method for manufacturing a semiconductor device which can form the dielectric film having excellent dielectric property and an upper flat surface at low production cost and in a short lead time.

Growing community of inventors

Kyoto, Japan

Michihiko Mifuji