Kabushiki Kaisha Toshiba

Tokyo Shibaura Denki Kabushiki Kaisha

Michihiko Inaba

Yasuhisa Ohtake

Shinya Sakurada

Mutsuki Yamazaki

Kazushige Yamamoto

Soichiro Shibasaki

Naoyuki Nakagawa

Hiroki Hiraga

Masaharu Kanto

Emiko Higashinakagawa

Akihiko Ono

Satoshi Takayama

Hideyuki Nakao

Haruhi Oooka

Shin-ichi Nakamura

Hitomi Saito

Tetsuo Fujiwara

Koichi Teshima

Hiroshi Ohno

Masashi Sahashi

Shinji Kobayashi

Yasutaka Nishida

Masayuki Itoh

Akiko Saito

Koji Yamakawa

Masahiro Hosoya

Mitsunaga Saito

Hiroki Iwanaga

Masami Okamura

Fumio Mori

Yoichi Tokai

Nobuo Iwase

Shinzo Sugai

Takaaki Murata

Akihiko Tsutai

Satoshi Itoh

Ichiro Yamanashi

Yasuhiro Ogura

Shigeru Kawaguchi

Eiichi Akiyoshi

Momoko Takemura

Yoshinori Fujimori

Kanemitsu Sato

Makoto Fujinuma

Yuuji Okita

Sueo Ando

Toshio Tetsuya

Mitsuo Kobayashi

Masayuki Fukuda

Hirobumi Ohmori

Yoko Ishimaru

Yukiko Nishiyama

Hisato Kihara

Masaharu Kantou

Fumio Suzuki

Satoshi Shikanai

A multi-junction solar cell of an embodiment includes a first solar cell including a first photoelectric conversion device, a second solar cell including a plurality of second photoelectric conversion devices connected in series and having a back contact, and an insulating layer between the first solar cell and the second solar cell. A device isolation region is provided between the second photoelectric conversion devices connected in series.

Multi-junction solar cell

In accordance with one embodiment, there is provided a photovoltaic cell module including a plurality of photovoltaic cell structures including a hole transport layer and an electron transport layer which are disposed on a common photoelectric conversion layer so that electromotive force polarities are alternately different, wherein the photovoltaic cell structures are electrically connected in series.

Photovoltaic cell module

A photoelectric conversion device of an embodiment has a substrate, a bottom electrode on the substrate, a light absorbing layer on the bottom electrode, an n-type layer on the light absorbing layer, a transparent electrode on the n-type layer, and an oxide layer on the transparent electrode. nand nsatisfy the relation 100/110&#x2264;n/n&#x2264;110/100. nis the refractive index of the transparent electrode. nis the refractive index of the oxide layer.

Photoelectric conversion device, and solar cell

A photoelectric conversion device of an embodiment has a substrate, a bottom electrode comprising an electrode layer on the substrate and an intermediate interface layer, a light absorbing layer on the intermediate interface layer. The electrode layer comprises Mo or W. The intermediate interface layer is a compound thin film of a compound comprising Mo or W and at least one element X selected from the group consisting of S, Se, and Te. The intermediate interface layer has a crystal phase and an amorphous phase with which the crystal phase is covered.

Photoelectric conversion device, solar cell and method for manufacturing photoelectric conversion device

A solar cell of an embodiment has a first solar cell, a second solar cell, and an intermediate layer between the first and second solar cells. The first solar cell has a Si layer as a light absorbing layer. The second solar cell has as a light absorbing layer one of a group I-III-VIcompound layer and a group I-II-IV-VIcompound layer. The intermediate layer has an n-type Si sublayer and at least one selected from a p-type Si sublayer, a metal compound sublayer, and a graphene sublayer. The metal compound sublayer is represented by MX where M denotes at least one type of element selected from Nb, Mo, Pd, Ta, W, and Pt and X denotes at least one type of element selected from S, Se, and Te.

Solar cell

A photoelectric conversion element of an embodiment includes: a back electrode; a heterojunction-type light absorbing layer on the back electrode, containing Cu, selected from Al, In and Ga, and selected from Se and S, and having a chalcopyrite structure; a transparent electrode on the light absorbing layer, wherein aback electrode side-part of the light absorbing layer is of p-type, and a transparent electrode-side part of the light absorbing layer is of n-type, the light absorbing layer has a part with an average crystal grain size of 1,000 nm to 3,000 nm in the vicinity of the back electrode, and the light absorbing layer has apart with an average crystal grain size of at most 500 nm in the vicinity of the transparent electrode or the light absorbing layer has an amorphous part in the vicinity of the transparent electrode.

Photoelectric conversion element, method for manufacturing photoelectric conversion element, and solar cell

A light concentrator of an embodiment includes: a first high refractive index layer, a first low refractive index layer, and a second high refractive index layer stacked in sequence, wherein a surface on the first low refractive index layer side of the first high refractive index layer has a periodic concavoconvex region.

Light concentrator and a solar cell

An organic thin-film solar cell module according to one embodiment includes solar cell panels and reflective surfaces. Each panel includes a substrate, a 1st electrode, a 2nd electrode and a photoelectric conversion layer. When supposing a 1st plane including the reflective surface, a 1st intersection line as a line of intersection of the 1st plane and the 2nd main surface of the substrate, and a 2nd plane including the 1st intersection line and forming an angle of 45&#xb0; with the 2nd main surface of the substrate and an angle smaller than 45&#xb0; with the 1st plane, an edge of the photoelectric conversion layer is in contact with the 2nd plane or the 2nd plane intersects the photoelectric conversion layer.

Organic thin-film solar cell module and sub-module

A solar cell module according to an embodiment includes a solar cell device and a support structure supporting the solar cell device. The solar cell device is a belt-like solar cell device including first portions arranged in one direction such that major surfaces thereof face each other, and a second portion interposed between the first portions. The edges of the first portions that correspond to a pair of long sides of the solar cell device are parallel to each other. Two adjacent first portions incline forwardly and backwardly with respect to the one direction. The second portion includes one or more planar or curved surfaces to connect the two adjacent first portions to each other.

Solar cell module

A solar cell includes a p-n junction formed by joining a p-type semiconductor and an n-type semiconductor. The p-type semiconductor is a chalcopyrite compound semiconductor with a band gap of 1.5 eV or more within which an intermediate level exists with a half bandwidth of 0.05 eV or more. The intermediate level is different from an impurity level. The chalcopyrite compound semiconductor includes a first element having first electronegativity of 1.9 or more in Pauling units, the first element occupying a lattice site of the semiconductor. A portion of the first element is substituted with a second element having second electronegativity different from the first electronegativity, the second element being a congeneric element of the first element. The intermediate level is created by substituting the first element with the second element.

A pair of electrodes (,) are formed on one surface of a dielectric substrate (,). A dielectric layer (,) is formed on the surface of the dielectric substrate (,) so as to cover the pair of electrodes (,). The pair of electrodes (,) have linear electrode elements, respectively. The respective linear electrode elements are arrange at equal intervals.

Ozonizing unit ozone generator and ozone-processing system

A decorative article comprises as essential components 5 to 95% by weight of Cu 5 to 95% by weight of a copper based component in which at least one kind of metal selected from a group consisting of Au, Pb, Zn, Sn, Ni and Al is solid-dissolved in Cu, and a balance of Fe and unavoidable impurities. The decorative article exhibits a color tone satisfying a formula x.gtoreq.0.3 and/or y.gtoreq.0.3 for which chromaticity coordinates x and y in a X-Y-Z colorimetric system are used. Usually, the decorative article iron alloy is practically used in the form of a plate and contains a cast structure in a part of its matrix while exhibiting a dislocation density of 10.sup.2 dl/cm.sup.2 or more. The cast structure is a dendritic structure which extends from the surface of the plate in the direction of a thickness of the latter. A thickness of the dendritic structure is determined to be 1/10 or more of the thickness of the plate.

Decorative article

The regenerating material according to the present invention comprises two alloy phases which differ in a content of rare earth elements. Of these alloy phases, a dominant phase in the regenerating material is defined as a main phase, and the other phase is defined as a sub-phase. A plurality of particles, each of which consists of a granular main phase and a sub-phase present on the surface of the main phase, gathers to form an aggregate. Otherwise, a sub-phase present in a main phase in the form of fiber. The refrigerator according to the present invention comprises a regenerator charged with above-mentioned regenerating material, a coolant gas and an expansion means for expanding the coolant gas.

Regenerating material and refrigerator using the same

Disclosed is a shadow mask plate material which consists of an Fe-Ni-based alloy containing iron and nickel as main constituents, has an unrecrystallized texture with a grain size of 10 .mu.m or less, and is excellent in etching characteristics for forming electron beam apertures.

Shadow mask plate material and shadow mask

According to the present invention, there is provided a method for forming a bump and comprising the steps of dipping a semiconductor element with an Al electrode and a passivation film formed thereon in a palladium solution containing 5 to 2,000 ppm of at least one element selected from the group consisting of Zn, Pb, Sn, Cd, and Cr, selectively precipitating palladium on the electrode, and conducting electroless nickel-plating on the semiconductor element, including the electrode on which palladium is precipitated.

Bump and method of manufacturing the same

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Yokohama, Japan

Michihiko Inaba