J-Devices Corporation

J-Device Corporation

Michiaki Tamakawa

Toshihiro Iwasaki

Shinji Watanabe

Kiminori Ishido

Hiroaki Matsubara

Tomoshige Chikai

Takashi Nakamura

Hirokazu Honda

Shingo Nakamura

Takeshi Miyakoshi

Shotaro Sakumoto

Sumikazu Hosoyamada

Yoshikazu Kumagaya

Hiroshi Demachi

A semiconductor device in which an insulating material layer contains no reinforced fibers such as a glass cloth or a nonwoven cloth and which enables miniaturization of metal thin-film wiring layers, a reduction in the diameter of metal vias, and a reduction in interlayer thickness. The semiconductor device includes an insulating material layer including one or more semiconductor elements sealed with an insulating material containing no reinforced fibers, a plurality of metal thin-film wiring layers, metal vias that electrically connect the metal thin-film wiring layers together and electrodes of the semiconductor elements and the metal thin-film wiring layers together, and a warpage adjustment layer arranged on one principal surface of the insulating material layer to offset warpage of the insulating material layer to reduce warpage of the semiconductor device.

Semiconductor device and method for manufacturing same

Thermal resistance is reduced from an element surface of a semiconductor chip to the rear surface of a semiconductor package. Split patterning of a metal is easily carried out, stress produced by a thermal expansion coefficient between silicon and metal is significantly reduced and environment reliability is improved. Low cost is realized by manufacturing a semiconductor package without using a TIM material. A semiconductor package is provided including a semiconductor chip including a first surface and a second surface opposed to the first surface and covered with a resin, an electrode being arranged over the first surface, a first wiring connected to the first surface directly or via a first opening arranged in the resin, and a second wiring connected to the second surface via a second opening arranged in the resin.

Semiconductor package and manufacturing method thereof

A stacked semiconductor package includes a first semiconductor package including a first circuit board and a first semiconductor device mounted on the first circuit board; a second semiconductor package including a second circuit board and a second semiconductor device mounted on the second circuit board, the second semiconductor package being stacked on the first semiconductor package; and a heat transfer member provided on the first semiconductor device and a part of the first circuit board, the part being around the first semiconductor device.

Semiconductor package

A magnetic shielding package of a non-volatile magnetic memory element, including: a soft magnetic material support plate; a first insulating material layerformed on the support plate; a non-volatile magnetic memory elementfixed on the first insulating material layer; a second insulating material layerthat encapsulates the memory element and the periphery thereof; in the second insulating material layer, a wiring layer, a soft magnetic layerorand a conductive portionconnecting an electrode of the circuit surface of the memory element and the wiring layer; and a magnetic shield partcontaining a soft magnetic material arranged like a wall at a distance from a side surface of the memory element so as to surround the memory element side surface partially or entirely, the magnetic shield part being magnetically connected to the soft magnetic layer.

Magnetic shielding package of non-volatile magnetic memory element

A manufacturing method for a semiconductor device of the present invention includes: preparing a semiconductor wafer including an electrode formed therein; electrically connecting a first semiconductor element formed in a semiconductor chip and the electrode formed in the semiconductor wafer; filling a gap between the semiconductor wafer and the semiconductor chip with a first insulating resin layer; forming a second insulating resin layer on the semiconductor wafer; grinding the second insulating resin layer and the semiconductor chip until a thickness of the semiconductor chip reaches a predetermined thickness; forming a first insulating layer on the second insulating resin layer and the semiconductor chip; forming a line on the first insulating layer connected with a conductive material filled an opening in the first insulating layer and the second insulating resin layer to expose the electrode; and grinding the semiconductor wafer until a thickness of the semiconductor wafer reaches a predetermined thickness.

Manufacturing method for semiconductor device

Growing community of inventors

Kanagawa, Japan

Michiaki Tamakawa