Nippon Oil Fats Co., Ltd.

Canon Kabushiki Kaisha

Michiaki Sakaguchi

Motoo Kumagai

Keiichi Kato

Masato Nagano

Fumio Takeuchi

Kazuhito Narumi

Humio Takeuti

Matsato Nagano

The present invention provides a ceramic having a first region comprising a dielectric porcelain having an insulating layer at the crystal grain boundary of a semiconductor porcelain containing 0.50 to 5.30 mol parts of MnO.sub.2 and 0.02 to 0.40 mol parts of Y.sub.2 O.sub.3 per 100 mol parts of the principal components comprising 49.50 to 54.00 mol % of TiO.sub.2 and 50.50 to 46.00 mol % of SrO, and a second region comprising a dielectric porcelain containing further 0.40 to 5.00 mol parts of MgO and 0.05 to 2.00 mol parts of SiO.sub.2 per 100 mol parts of the principal components in addition to the composition of the first region, and also provides a circuit substrate and an electronic circuit substrate using the same ceramic.

Ceramic, circuit substrate and electronic circuit substrate by use

The present invention provides a ceramic having a first region comprising a dielectric porcelain having an insulating layer at the crystal grain boundary of a semiconductor porcelain containing 0.50 to 5.30 mol parts of MnO.sub.2 and 0.02 to 0.40 mol parts of Y.sub.2 O.sub.3 per 100 mol parts of the principal components comprising 49.50 to 54.00 mol. % of TiO.sub.2 and 50.50 to 46.00 mol. % of SrO, and a second region comprising a dielectric porcelain containing further 0.40 to 5.00 mol parts of Al.sub.2 O.sub.3 and 0.05 to 2.00 mol parts of SiO.sub.2 per 100 mol parts of the principal components in addition to the composition of the first region, and also provides a circuit substrate and an electronic circuit substrate using the same ceramic.

A ceramic comprising a first region comprises a dielectric porcelain having an insulating layer at the crystal grain boundary of a semiconductor porcelain containing 0.50-5.30 mol parts of MnO.sub.2 and 0.02-0.40 mol parts of Y.sub.2 O.sub.3 per 100 mol parts of a principal components consisting of 49.50-54.00 mol % of TiO.sub.2 and 50.50-46.00 mol % of SrO, and a second region comprising a dielectric porcelain containing further 0.40-5.00 mol parts of Al.sub.2 O.sub.3, based on 100 mol parts of said principal components, in addition to the composition of the first region.

Ceramic and circuit substrate and electronic circuit substrate by use

A ceramic comprises a first region comprising a dielectric porcelain having an insulating layer at the crystal grain boundary of a semiconductor porcelain containing 0.50-5.30 mol parts of MnO.sub.2 and 0.02-0.40 mol parts of Y.sub.2 O.sub.3 per 100 mol parts of a principal components consisting of 49.50-54.00 mol % of TiO.sub.2 and 50.50-46.00 mol % of SrO, and a second region comprising a dielectric porcelain containing further 0.40-5.00 mol parts of M.sub.g O, based on 100 mol parts of said principal components, in addition to the composition of the first region.

A ceramic-forming composition comprises from 2.0 to 5.0 mol parts of MnO.sub.2 and from 0.05 to 0.30 mol part of Y.sub.2 O.sub.3 based on 100 mol parts of a main component comprising from 50.20 to 53.50 mol % of TiO.sub.2 and from 49.80 to 46.50 mol % of SrO. A semiconductor porcelain substrate, a dielectric porcelain substrate and a capacitor are produced by using the same ceramic-forming composition.

Semiconductor porcelain substrate, dielectric porcelain substrate and

The present invention provides a ceramic having a first region comprising a dielectric porcelain having an insulating layer at the crystal grain boundary of a semiconductor porcelain containing 0.50 to 5.30 mol parts of MnO.sub.2 and 0.02 to 0.40 mol parts of Y.sub.2 O.sub.3 per 100 mol parts of the principal components comprising 49.50 to 54.00 mol % of TiO.sub.2 and 50.50 to 46.00 mol % of SrO, and a second region comprising a dielectric porcelain containing further 0.40 to 5.00 mol parts of Al.sub.2 O.sub.3 and 0.05 to 2.00 mol parts of SiO.sub.2 per 100 mol parts of the principal components in addition to the composition of the first region, and also provides a circuit substrate and an electronic circuit substrate using the same ceramic.

A composition for a reduction-reoxidation type semiconductive ceramic capcitor is disclosed which consists substantially of 100 mol % of a barium composite oxide consisting of BaTiO.sub.3 and BaZrO.sub.3 and having a BaZrO.sub.3 content in the range of 0 to 20 mol %, 0.3 to 3.0 mol % of Bi.sub.2 O.sub.3, and 0.1 to 8.5 mol % of at least one member selected from the group consisting of TiO.sub.2 and ZrO.sub.2 and further incorporates therein 0.001 to 1.00% by weight of at least one member selected from the group consisting of the oxides of Cr, Fe, Co, Zn, Cu, Al, Si, and Mg. This composition possesses a breakdown voltage of not less than 400 V, an insulation resistance of not less than 10.sup.9 .OMEGA., an electrostatic capacity of not less than 0.65 .mu.F/cm.sup.2 per unit surface area, and a magnitude, tan .delta., of less than 2.5%.

Composition for reduction-reoxidation type semiconductive ceramic

A ceramic composition for a reduction-reoxidation type semiconductive capacitor, comprising (A) barium titanate or barium titanate and strontium titanate, (B) titanium oxide, and (C) at least one oxide selected from the group consisting of the oxides severally of La, Ce, Nb, Nd, Dy, Y, Sb, W, and Ta in a molar ratio of 100:0.01.about.15:0.01.about.10 and further comprising (D) 0.001 to 1% by weight, based on the total amount of the compounds, (A), (B), and (C), of at least one oxide selected from the group consisting of the oxides severally of Cu, Zn, Al, Mg, and Mo and exhibiting a breakdown voltage of not less than 900 V, and insulation resistance of not less than 10.sup.10 .OMEGA., an electrostatic capacity per unit surface area of not less than 0.06 .mu.F/cm.sup.2, and a low dielectric loss, tan .delta., of not more than 2.0%.

Ceramic composition for reduction-reoxidation type semiconductive

A ceramic comprises a first region comprising a dielectric porcelain having an insulating layer at the crystal grain boundary of a semiconductor porcelain containing 0.50-5.30 mol parts of MnO.sub.2 and 0.02-0.40 mol parts of Y.sub.2 O.sub.3 per 100 mol parts of a principal components consisting of 49.50-54.00 mol % of TiO.sub.2 and 50.50-46.00 mol % of SrO, and a second region comprising a dielectric porcelain containing further 0.40-5.00 mol parts of MgO, based on 100 mol parts of said principal components, in addition to the composition of the first region.

The present invention provides a ceramic having a first region comprising a dielectric porcelain having an insulating layer at the crystal grain boundary of a semiconductor porcelain containing 0.50 to 5.30 mol parts of MnO.sub.2 and 0.02 to 0.40 mol parts of Y.sub.2 O.sub.3 per 100 mol parts of the principal components comprising 49.50 to 54.00 mol% of TiO.sub.2 and 50.50 to 46.00 mol% of SrO, and a second region comprising a dielectric porcelain containing further 0.40 to 5.00 mol parts of MgO and 0.05 to 2.00 mol parts of SiO.sub.2 per 100 mol parts of the principal components in addition to the composition of the first region, and also provides a circuit substrate and an electronic circuit substrate using the same ceramic.

A composition for semiconductor porcelain comprisies:

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Iwamisawa, Japan

Michiaki Sakaguchi