Other

Adv Antest Corporation

Adramtest Corp.

Canon Kabushiki Kaisha

Michiaki Endo

Haruo Yoshida

Yasuhiro Maeda

Nobuo Miyamoto

Michio Niwano

An infrared beam is applied into an infrared transmitting substrate disposed in an environment to be measured; the infrared beam which has undergone multiple internal reflections in the infrared transmitting substrate and exited from the infrared transmitting substrate is detected; the detected infrared beam is spectroscopically analyzed to measure a species and/or a quantity of the substance in the environment present near the infrared transmitting substrate ; and a species and/or a concentration of the substance in the environment to be measured are measured based on the species and/or the quantity of the substance in the environment present near the infrared transmitting substrate . Thus, the substances in the environment, such as organic contaminants, etc., present in the atmosphere can be identified, or their concentrations can be measured, with high sensitivity and realtime.

Method and apparatus for environmental monitoring

A surface state monitoring apparatus for monitoring a surface state of semiconductor substrates by infrared spectroscopy at fabrication site of semiconductor substrates. The apparatus comprises an incidence optical system for introducing infrared radiation into a substrate-to-be-monitored, a detection optical system for detecting infrared radiation which has undergone multiple reflections inside the substrate and exited from the substrate, a surface state monitoring means for monitoring a surface state of the substrate based on the detected infrared radiation, a position detecting means for optically detecting a position of the substrate, and a control means for controlling a position and an angle at which infrared radiation to be incident on the substrate, corresponding to the position of the substrate.

Surface state monitoring method and apparatus

A substrate treating method and apparatus which can perform in-situ monitoring of surface state of a semiconductor substrate. The substrate treating apparatus comprises substrate treating means for subjecting the substrate to a required treatment, means for condensing infrared radiation emitted by an infrared radiation source onto an outer peripheral part of the substrate and introducing the infrared radiation into the substrate, means for detecting the infrared radiation which has undergone multiple reflection inside the substrate and exited from the substrate, means for analyzing the detected infrared radiation, means for monitoring the surface state of the substrate, and control means for controlling the substrate treating means, based on the monitored surface state of the substrate.

Substrate treating method and apparatus

A surface state monitoring method and apparatus for performing in-situ monitoring of surface states of semiconductor substrates. The apparatus comprises condensing means for condensing infrared radiation to an outer peripheral part of the substrate-to-be-monitored; control means 80 for controlling an incident angle of the infrared radiation condensed by the condensing means ; condensing means for condensing the infrared radiation which has undergone multiple reflection in the substrate-to-be-monitored; detecting means for detecting the infrared radiation condensed by the infrared radiation condensing means , and analyzing means for analyzing the detected infrared radiation detected and measuring contaminants staying on the surfaces of the substrate-to-be-monitored.

The surface state monitoring apparatus comprises: a wafer cassette holding a plurality of semiconductor wafers; an incidence optical system for applying infrared radiation to at least one of said plurality of semiconductor wafers; a detection optical system for detecting the infrared radiation which has undergone multiple reflection in the semiconductor wafer and exited from the semiconductor wafer; surface state monitoring means for monitoring surface states of the semiconductor wafer, based on the infrared radiation detected by the detection optical system; and displacing means for displacing the wafer cassette relative to the incidence optical system and the detection optical system. Surface states of said plurality of semiconductor wafers are sequentially monitored while the wafer cassette is displaced relative to the incidence optical system and the detection optical system by the displacing means, whereby surface states of said plurality of semiconductor wafers held in the wafer cassette are continuously monitored.

Growing community of inventors

Tokyo, Japan

Michiaki Endo